JPS5478674A - Input protective device for complementary semiconductor device - Google Patents
Input protective device for complementary semiconductor deviceInfo
- Publication number
- JPS5478674A JPS5478674A JP14626877A JP14626877A JPS5478674A JP S5478674 A JPS5478674 A JP S5478674A JP 14626877 A JP14626877 A JP 14626877A JP 14626877 A JP14626877 A JP 14626877A JP S5478674 A JPS5478674 A JP S5478674A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffusion
- protective
- input
- input protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000000295 complement effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To ensure the protective capacity to the ratch-up in case the forward voltage is applied to the uni-conduction type semiconductor substrate from outside, by providing the reverse conducting input protective region and another deep reverse conducting region enclosing the protective region and then securing an electric connection between the deep region and the substrate. CONSTITUTION:P<->-type well region 4a and 4b are formed through diffusion and at one time on N-type semiconductor substrate 1 to be used for N-channel transistor Tr and the input protective device. Then N<+>-type region 3 is formed through diffusion to eliminate the parasitic effect on the substrate surface as well as to form the sfource and drain of N-channel MOS.Tr, and also input protective region 2 is formed through diffusion to be used as the input protective diode or the resistance. At the same time, P<+>-type region 2' is formed through diffusion within region 4a and 4b to eliminate the parasitic effect as well as to be used as the source and drain of P-channel MOS.Tr. After this, the gate SiO2 film is provided at the fixed region, and the input electrode, the gate connecting electrode plus earth electrodes 6-6'' are attached respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14626877A JPS5478674A (en) | 1977-12-05 | 1977-12-05 | Input protective device for complementary semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14626877A JPS5478674A (en) | 1977-12-05 | 1977-12-05 | Input protective device for complementary semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5478674A true JPS5478674A (en) | 1979-06-22 |
JPS6318337B2 JPS6318337B2 (en) | 1988-04-18 |
Family
ID=15403886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14626877A Granted JPS5478674A (en) | 1977-12-05 | 1977-12-05 | Input protective device for complementary semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5478674A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56120165A (en) * | 1980-02-28 | 1981-09-21 | Nec Corp | Protecting device for input of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5098791A (en) * | 1973-12-27 | 1975-08-06 | ||
JPS5238890A (en) * | 1975-09-23 | 1977-03-25 | Mitsubishi Electric Corp | Semiconductor device |
-
1977
- 1977-12-05 JP JP14626877A patent/JPS5478674A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5098791A (en) * | 1973-12-27 | 1975-08-06 | ||
JPS5238890A (en) * | 1975-09-23 | 1977-03-25 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56120165A (en) * | 1980-02-28 | 1981-09-21 | Nec Corp | Protecting device for input of semiconductor device |
JPH035069B2 (en) * | 1980-02-28 | 1991-01-24 | Nippon Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6318337B2 (en) | 1988-04-18 |
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