JPS57167678A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57167678A JPS57167678A JP5169581A JP5169581A JPS57167678A JP S57167678 A JPS57167678 A JP S57167678A JP 5169581 A JP5169581 A JP 5169581A JP 5169581 A JP5169581 A JP 5169581A JP S57167678 A JPS57167678 A JP S57167678A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- injected
- type impurities
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To dispense with the unnecessary area and to increase the degree of integration for the subject semiconductor device by a method wherein a source and drain region and a channel region are formed using a self-aligning method. CONSTITUTION:A semiconductor region 52, wherein P type impurities are selectively injected, is additionally formed on a P type substrate 1, and a field oxide film 53 is formed on the surface of the region 52. On the above film 53, a conductive film 54, whereon N type impurities are injected on the whole surface, and an insulating film 55 are formed. Then, an etching is selectively peformed on the expected region whereon a transistor channel of the first insulating film 54 will be formed, and another etching is performed on the surface of the semiconductor substrate using the remaining insulating film 55 as a mask. Then, the exposed surface of the semiconductor substrate is oxidized, a gate oxide film 56 is formed, a polycrystalline silicon is formed on the film 56, and a gate electrode 57 is formed. Besides, N type impurities are injected on the substrate surface from the conductive film 54 by performing a diffusion process, and an N<+> region 58 is formed. This region 58 is turned into the source and drain of the transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5169581A JPS57167678A (en) | 1981-04-08 | 1981-04-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5169581A JPS57167678A (en) | 1981-04-08 | 1981-04-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57167678A true JPS57167678A (en) | 1982-10-15 |
Family
ID=12894030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5169581A Pending JPS57167678A (en) | 1981-04-08 | 1981-04-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57167678A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61125175A (en) * | 1984-11-22 | 1986-06-12 | Nec Corp | Mis type semiconductor integrated circuit device and manufacture thereof |
-
1981
- 1981-04-08 JP JP5169581A patent/JPS57167678A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61125175A (en) * | 1984-11-22 | 1986-06-12 | Nec Corp | Mis type semiconductor integrated circuit device and manufacture thereof |
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