JPS5458350A - Device for depositing semiconductor material - Google Patents
Device for depositing semiconductor materialInfo
- Publication number
- JPS5458350A JPS5458350A JP11986878A JP11986878A JPS5458350A JP S5458350 A JPS5458350 A JP S5458350A JP 11986878 A JP11986878 A JP 11986878A JP 11986878 A JP11986878 A JP 11986878A JP S5458350 A JPS5458350 A JP S5458350A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor material
- depositing semiconductor
- depositing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2743950A DE2743950C2 (de) | 1977-09-29 | 1977-09-29 | Vorrichtung zum Abscheiden von Halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5458350A true JPS5458350A (en) | 1979-05-11 |
JPS5639048B2 JPS5639048B2 (pt) | 1981-09-10 |
Family
ID=6020264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11986878A Granted JPS5458350A (en) | 1977-09-29 | 1978-09-28 | Device for depositing semiconductor material |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5458350A (pt) |
BR (1) | BR7806432A (pt) |
DE (1) | DE2743950C2 (pt) |
IN (1) | IN149401B (pt) |
IT (1) | IT1099206B (pt) |
PL (1) | PL115365B1 (pt) |
SU (1) | SU810086A3 (pt) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57155724A (en) * | 1981-02-27 | 1982-09-25 | Heraeus Schott Quarzschmelze | Quartz material exhaust gas bell for isolating synthetic silicon |
JPH0239525A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 半導体熱処理装置 |
US8613358B2 (en) | 2010-03-18 | 2013-12-24 | Jong Soo Park | Structure for detachable coupling of containers |
US9656782B2 (en) | 2010-03-18 | 2017-05-23 | Jong Soo Park | Structure for detachable coupling of containers |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
GB1209580A (en) * | 1969-03-17 | 1970-10-21 | Hamco Mach & Elect Co | Automatic control for crystal growing apparatus |
DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
-
1977
- 1977-09-29 DE DE2743950A patent/DE2743950C2/de not_active Expired
-
1978
- 1978-08-31 IN IN958/CAL/78A patent/IN149401B/en unknown
- 1978-09-21 PL PL1978209746A patent/PL115365B1/pl unknown
- 1978-09-28 JP JP11986878A patent/JPS5458350A/ja active Granted
- 1978-09-28 BR BR7806432A patent/BR7806432A/pt unknown
- 1978-09-28 IT IT28167/78A patent/IT1099206B/it active
- 1978-09-29 SU SU2667252A patent/SU810086A3/ru active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57155724A (en) * | 1981-02-27 | 1982-09-25 | Heraeus Schott Quarzschmelze | Quartz material exhaust gas bell for isolating synthetic silicon |
JPH0239088B2 (pt) * | 1981-02-27 | 1990-09-04 | Hereusu Kuarutsushumerutsue Gmbh | |
JPH0239525A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 半導体熱処理装置 |
US8613358B2 (en) | 2010-03-18 | 2013-12-24 | Jong Soo Park | Structure for detachable coupling of containers |
US9656782B2 (en) | 2010-03-18 | 2017-05-23 | Jong Soo Park | Structure for detachable coupling of containers |
Also Published As
Publication number | Publication date |
---|---|
SU810086A3 (ru) | 1981-02-28 |
JPS5639048B2 (pt) | 1981-09-10 |
BR7806432A (pt) | 1979-05-08 |
DE2743950A1 (de) | 1979-04-12 |
PL209746A1 (pl) | 1979-06-04 |
PL115365B1 (en) | 1981-03-31 |
IT7828167A0 (it) | 1978-09-28 |
IN149401B (pt) | 1981-11-28 |
DE2743950C2 (de) | 1987-02-12 |
IT1099206B (it) | 1985-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2000639B (en) | Semiconductor device | |
JPS5421170A (en) | Package for semiconductor device | |
JPS5387165A (en) | Package for pushhpull semiconductor device | |
AU3273278A (en) | Semiconductor device | |
GB2010013B (en) | Semiconductor device | |
GB2004416B (en) | Semiconductor device | |
JPS5285817A (en) | Device for carrying slender material | |
GB2011714B (en) | Semiconductor device | |
GB2005075B (en) | Semiconductor device manufacture | |
JPS5453973A (en) | Semiconductor device | |
GB2011175B (en) | Semiconductor device | |
JPS5323661A (en) | Adjusting device for theodlite | |
GB2003797A (en) | Device for water-sports | |
JPS5458350A (en) | Device for depositing semiconductor material | |
JPS5397375A (en) | Device for producing semiconductor | |
JPS5458166A (en) | Device for hoisting sheettlike material | |
JPS5448305A (en) | Adjusting device for turboocompressor | |
JPS5298666A (en) | Device for forming band material | |
JPS5458351A (en) | Device for depositing semiconductor material | |
GB2011708B (en) | Semiconductor device | |
GB2009499B (en) | Semiconductor device | |
JPS53149545A (en) | Package material for transplanting | |
JPS5486145A (en) | Device for lockkup | |
JPS53104898A (en) | Ceramic material for semiconductor | |
JPS53149760A (en) | Depositing device |