JPS5455388A - Production of mos type semiconductor device - Google Patents

Production of mos type semiconductor device

Info

Publication number
JPS5455388A
JPS5455388A JP12265977A JP12265977A JPS5455388A JP S5455388 A JPS5455388 A JP S5455388A JP 12265977 A JP12265977 A JP 12265977A JP 12265977 A JP12265977 A JP 12265977A JP S5455388 A JPS5455388 A JP S5455388A
Authority
JP
Japan
Prior art keywords
film
layers
sio
high temperature
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12265977A
Other languages
Japanese (ja)
Inventor
Shigero Kuninobu
Atsushi Ueno
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12265977A priority Critical patent/JPS5455388A/en
Publication of JPS5455388A publication Critical patent/JPS5455388A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To produce a Si gate MOSIC of a small occupying area and high speed operation without high temperature heat treatment.
CONSTITUTION: Openings 18 are made in the oxide thin film 17 formed on a P type Si substrate 11, and n type poly-Si 20 is laminated thereon and is heat treated to create n layers 21, 22. The layer 20 is selectively opened with holes, leaving poly-Si films 23 thru 25. Phosphorus ions are then implanted to make n layers 27, 28. Next, Si3N4 29, SiO2 30 are formed by CVD. Since the growth is performed at about 450°C, the phosphorus of the layers 27, 28 does not migrate. Next, the film 30 is selectively etched by HF+NH2F and the film 29 by hot phosphoric acid. When Al wirings 31, 32 are made, the SiO2 film is etched even if the holes over the wiring 31 and gate 25 deviate, thus shorting does not occur. In this way, there is no high temperature treatment, the diffusion in the lateral direction of the source, drain is less and is suppressed, hence, higher speed of the element may be achieved and the variations in threshold value and the decrease in dielectric strength may be prevented
COPYRIGHT: (C)1979,JPO&Japio
JP12265977A 1977-10-12 1977-10-12 Production of mos type semiconductor device Pending JPS5455388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12265977A JPS5455388A (en) 1977-10-12 1977-10-12 Production of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12265977A JPS5455388A (en) 1977-10-12 1977-10-12 Production of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5455388A true JPS5455388A (en) 1979-05-02

Family

ID=14841443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12265977A Pending JPS5455388A (en) 1977-10-12 1977-10-12 Production of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5455388A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562654A (en) * 1979-06-21 1981-01-12 Nec Corp Semiconductor device
JPS5683975A (en) * 1979-12-12 1981-07-08 Toshiba Corp Semiconductor device and manufacture
JPS56150831A (en) * 1980-04-24 1981-11-21 Nec Corp Semiconductor device
JPS5921043A (en) * 1982-07-27 1984-02-02 Mitsubishi Electric Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120584A (en) * 1974-03-07 1975-09-20
JPS50137086A (en) * 1974-04-17 1975-10-30

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120584A (en) * 1974-03-07 1975-09-20
JPS50137086A (en) * 1974-04-17 1975-10-30

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562654A (en) * 1979-06-21 1981-01-12 Nec Corp Semiconductor device
JPS5683975A (en) * 1979-12-12 1981-07-08 Toshiba Corp Semiconductor device and manufacture
JPH0217942B2 (en) * 1979-12-12 1990-04-24 Tokyo Shibaura Electric Co
JPS56150831A (en) * 1980-04-24 1981-11-21 Nec Corp Semiconductor device
JPS5921043A (en) * 1982-07-27 1984-02-02 Mitsubishi Electric Corp Manufacture of semiconductor device

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