JPS5370682A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS5370682A
JPS5370682A JP14633576A JP14633576A JPS5370682A JP S5370682 A JPS5370682 A JP S5370682A JP 14633576 A JP14633576 A JP 14633576A JP 14633576 A JP14633576 A JP 14633576A JP S5370682 A JPS5370682 A JP S5370682A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
memory device
decreasing
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14633576A
Other languages
Japanese (ja)
Inventor
Fujio Masuoka
Kenji Natori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14633576A priority Critical patent/JPS5370682A/en
Publication of JPS5370682A publication Critical patent/JPS5370682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To shorten channel length without decreasing the dielectric strength of a non-volatile semiconductor memory suitable for high density integration by forming a recess in the channel region between source and drain regions.
JP14633576A 1976-12-06 1976-12-06 Non-volatile semiconductor memory device Pending JPS5370682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14633576A JPS5370682A (en) 1976-12-06 1976-12-06 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14633576A JPS5370682A (en) 1976-12-06 1976-12-06 Non-volatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5370682A true JPS5370682A (en) 1978-06-23

Family

ID=15405351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14633576A Pending JPS5370682A (en) 1976-12-06 1976-12-06 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5370682A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1054453A2 (en) * 1999-05-18 2000-11-22 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
US7026687B2 (en) 2002-04-17 2006-04-11 Fujitsu Limited Non-volatile semiconductor memory and method of manufacturing the same
JP2013131772A (en) * 2006-12-15 2013-07-04 Nec Corp Nonvolatile storage device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1054453A2 (en) * 1999-05-18 2000-11-22 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
EP1054453A3 (en) * 1999-05-18 2002-04-17 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
US6563163B1 (en) 1999-05-18 2003-05-13 Hiroshima University Nonvolatile memory using deep level capture of carrier at corner structure of oxide film
US7026687B2 (en) 2002-04-17 2006-04-11 Fujitsu Limited Non-volatile semiconductor memory and method of manufacturing the same
JP2013131772A (en) * 2006-12-15 2013-07-04 Nec Corp Nonvolatile storage device
US8796129B2 (en) 2006-12-15 2014-08-05 Nec Corporation Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region

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