JPS5419377A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5419377A JPS5419377A JP8471277A JP8471277A JPS5419377A JP S5419377 A JPS5419377 A JP S5419377A JP 8471277 A JP8471277 A JP 8471277A JP 8471277 A JP8471277 A JP 8471277A JP S5419377 A JPS5419377 A JP S5419377A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- implanting
- shortened
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Weting (AREA)
Abstract
PURPOSE: To prevent impurity diffusion, and make possible considerable reduction of short channel effect even if gate width is shortened by implanting an impurity which becomes a channel stopper layer thereafter forming an oxide layer by a CVD method.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8471277A JPS5419377A (en) | 1977-07-14 | 1977-07-14 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8471277A JPS5419377A (en) | 1977-07-14 | 1977-07-14 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5419377A true JPS5419377A (en) | 1979-02-14 |
Family
ID=13838266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8471277A Pending JPS5419377A (en) | 1977-07-14 | 1977-07-14 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5419377A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5717356A (en) * | 1980-05-19 | 1982-01-29 | Asea Ab | Method and apparatus for agitating casting strand non-coagulated region |
-
1977
- 1977-07-14 JP JP8471277A patent/JPS5419377A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5717356A (en) * | 1980-05-19 | 1982-01-29 | Asea Ab | Method and apparatus for agitating casting strand non-coagulated region |
JPH0220349B2 (en) * | 1980-05-19 | 1990-05-09 | Asea Brown Boveri |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5284981A (en) | Production of insulated gate type semiconductor device | |
JPS5333074A (en) | Production of complementary type insulated gate field effect semiconductor device | |
JPS53124087A (en) | Manufacture of semiconductor device | |
JPS5419377A (en) | Production of semiconductor device | |
JPS548475A (en) | Manufacture for semiconductor | |
JPS5265686A (en) | Production of mos semiconductor device | |
JPS5225582A (en) | Production method of semiconductor device | |
JPS5478673A (en) | Manufacture of complementary insulator gate field effect transistor | |
JPS53142881A (en) | Manufacture for semiconductor device | |
JPS539482A (en) | Mis semiconductor device and its production | |
JPS5387679A (en) | Semiconductor integrated circuit device | |
JPS5339093A (en) | Production of silicon gate complementary type mis semiconductor device | |
JPS5312278A (en) | Production of mos type semiconductor device | |
JPS5320775A (en) | Production of semiconductor device | |
JPS53137678A (en) | Manufacture for mos type semiconductor device | |
JPS5286779A (en) | Semiconductor device | |
JPS57201080A (en) | Semiconductor device | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5367373A (en) | Semiconductor device | |
JPS5586163A (en) | Mis semiconductor device | |
JPS53139985A (en) | Production of mis type transistors | |
JPS53100779A (en) | Production of insulated gate type semiconductor device | |
JPS5282078A (en) | Production of mos transistor | |
JPS5347781A (en) | Production of silicon gate semiconductor device | |
JPS5269583A (en) | Manufacture of insulation gate type semiconductor device |