Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP10854677ApriorityCriticalpatent/JPS5441683A/en
Publication of JPS5441683ApublicationCriticalpatent/JPS5441683A/en
PURPOSE: To increase the high frequency performance, by using the high impurity concentrating layer by ion injection for the active region and by inserting the low impurity concentration buffer layer between the gate electrode and the active layer.
COPYRIGHT: (C)1979,JPO&Japio
JP10854677A1977-09-081977-09-08Field effect type transistor and its manufacture
PendingJPS5441683A
(en)