JPS54162966A - Vapor growth method and its device for semiconductor substrate - Google Patents
Vapor growth method and its device for semiconductor substrateInfo
- Publication number
- JPS54162966A JPS54162966A JP7150678A JP7150678A JPS54162966A JP S54162966 A JPS54162966 A JP S54162966A JP 7150678 A JP7150678 A JP 7150678A JP 7150678 A JP7150678 A JP 7150678A JP S54162966 A JPS54162966 A JP S54162966A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- container
- vapor growth
- gas
- plasma discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To increase the uniformity of the film by introducing both the plasma- changed gas generated at the plasma discharge part and the vapor growth source gas given from other waveguide into the airtight reaction container and obtaining the uniform gas flow at the reaction part. CONSTITUTION:Semiconductor substrate 11 is provided into airtight reaction container 16, and the microwave produced from the microwave generator installed outside container 16 is sent to plasma discharge part 33 to generate the plasma discharge. The plasma discharge is then introduced to container 16 through plasma- changed gas introduction mouth 23. At the same time, the different vapor growth source gas is introduced from other waveguide, and the inside of container 16 is decompressed until the atmosphere of both gas is secured there. Thus the vapor growth is given by the plasma to substrate 11. In such way, the uniform gas flow is secured with use of no discharge electrode at the reaction part, thus enhancing the uniformity of the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7150678A JPS54162966A (en) | 1978-06-15 | 1978-06-15 | Vapor growth method and its device for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7150678A JPS54162966A (en) | 1978-06-15 | 1978-06-15 | Vapor growth method and its device for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54162966A true JPS54162966A (en) | 1979-12-25 |
Family
ID=13462633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7150678A Pending JPS54162966A (en) | 1978-06-15 | 1978-06-15 | Vapor growth method and its device for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162966A (en) |
-
1978
- 1978-06-15 JP JP7150678A patent/JPS54162966A/en active Pending
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