JPS57178396A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS57178396A
JPS57178396A JP6465281A JP6465281A JPS57178396A JP S57178396 A JPS57178396 A JP S57178396A JP 6465281 A JP6465281 A JP 6465281A JP 6465281 A JP6465281 A JP 6465281A JP S57178396 A JPS57178396 A JP S57178396A
Authority
JP
Japan
Prior art keywords
difference
stages
junction
active layer
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6465281A
Other languages
Japanese (ja)
Inventor
Kazuhisa Murata
Saburo Yamamoto
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6465281A priority Critical patent/JPS57178396A/en
Publication of JPS57178396A publication Critical patent/JPS57178396A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To form striped structure, which is easily manufactured, by shaping difference in the built-in voltage of a P-N junction and limiting a current path. CONSTITUTION:A difference in stages 12 is formed to a substrate crystal 11, Zn doped into the substrate crystal is diffused so as not to penetrate an active layer 13 in the inclined section of the difference in stages 12, Zn is diffused so that the P-N junction is positioned into a growth layer adjoining to the active layer 13 while penetrating the active layer 13 in other sections, and difference is shaped in the built-in voltage of the P-N junction in the upper section of the difference in stages 12 and other sections. Accordingly, currents concentrate to the difference in stages 12, and minute spot oscillation is conducted.
JP6465281A 1981-04-27 1981-04-27 Semiconductor laser Pending JPS57178396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6465281A JPS57178396A (en) 1981-04-27 1981-04-27 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6465281A JPS57178396A (en) 1981-04-27 1981-04-27 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57178396A true JPS57178396A (en) 1982-11-02

Family

ID=13264372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6465281A Pending JPS57178396A (en) 1981-04-27 1981-04-27 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57178396A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
JPS5518094A (en) * 1978-07-27 1980-02-07 Nec Corp Semiconductor laser device with high optical output and horizontal fundamental mode
JPS5518037A (en) * 1978-07-24 1980-02-07 Nec Corp Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152878A (en) * 1978-05-23 1979-12-01 Sharp Corp Structure of semiconductor laser element and its manufacture
JPS5518037A (en) * 1978-07-24 1980-02-07 Nec Corp Semiconductor laser
JPS5518094A (en) * 1978-07-27 1980-02-07 Nec Corp Semiconductor laser device with high optical output and horizontal fundamental mode

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