JPS54128675A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54128675A
JPS54128675A JP3731278A JP3731278A JPS54128675A JP S54128675 A JPS54128675 A JP S54128675A JP 3731278 A JP3731278 A JP 3731278A JP 3731278 A JP3731278 A JP 3731278A JP S54128675 A JPS54128675 A JP S54128675A
Authority
JP
Japan
Prior art keywords
stem
leads
emitter
dissipation
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3731278A
Other languages
Japanese (ja)
Inventor
Naoki Hachiman
Yoshiki Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP3731278A priority Critical patent/JPS54128675A/en
Publication of JPS54128675A publication Critical patent/JPS54128675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To make strong the semiconductor to the power cycle, by performing efficient heat dissipation from the electrode at the major plane close to the main dissipation part of the semiconductor to the stem. CONSTITUTION:The disc 13 is insulated and sealed to the hole 11 at the center of the stem substrate 1 via the glass 12, and the transistor 7 is fixed on the disc 13 via the solder 8 by using the stem 15 directly implanting the leads 14 to the stem substrate 1, and the emitter is connected to the leads 14 via the plate connector 16 of copper. With this construction, the heat of the base-to-emitter junction 75 being major heat dissipation is effectively dissipated to the stem substrate 1 via the emitter electrode 79, connector 16 and leads 14 and the thermal dissipation via the solder material is helped. Thus, based on the temperature difference and the difference of thermal expansion coefficient between the element and the stem 15, the stress exerted on the solder material is reduced and the strength against power cycle can be increased.
JP3731278A 1978-03-29 1978-03-29 Semiconductor device Pending JPS54128675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3731278A JPS54128675A (en) 1978-03-29 1978-03-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3731278A JPS54128675A (en) 1978-03-29 1978-03-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54128675A true JPS54128675A (en) 1979-10-05

Family

ID=12494163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3731278A Pending JPS54128675A (en) 1978-03-29 1978-03-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54128675A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153871U (en) * 1978-04-19 1979-10-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153871U (en) * 1978-04-19 1979-10-25

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