JPS54121754A - Infrared ray transmission window - Google Patents

Infrared ray transmission window

Info

Publication number
JPS54121754A
JPS54121754A JP2904478A JP2904478A JPS54121754A JP S54121754 A JPS54121754 A JP S54121754A JP 2904478 A JP2904478 A JP 2904478A JP 2904478 A JP2904478 A JP 2904478A JP S54121754 A JPS54121754 A JP S54121754A
Authority
JP
Japan
Prior art keywords
thin film
znse
substrate
infrared ray
transmission window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2904478A
Other languages
Japanese (ja)
Other versions
JPS6137601B2 (en
Inventor
Katsutoshi Muto
Takao Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2904478A priority Critical patent/JPS54121754A/en
Publication of JPS54121754A publication Critical patent/JPS54121754A/en
Publication of JPS6137601B2 publication Critical patent/JPS6137601B2/ja
Granted legal-status Critical Current

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  • Optical Filters (AREA)

Abstract

PURPOSE: To make the infrared ray transmission window more difficult to break as compared to that of conventional ones by using the same material as that of ZnSe substrate as the base material for interference thin film and dispersing metal fine particles in the interference thin film.
CONSTITUTION: A metal such as Au of a higher reflectance to the wavelength of incident light and ZnSe are alternately heated and evaporated by electron beams onto a ZnSe substrate 1, whereby the metal fine particles are dispersed in the ZnSe and an interference thin film 5 of good abhesiveness to the substrate 1 and of a resembling coefficient of expansion is formed. Further a ZnSe thin film 3 is evaporated thereon. In this infrared ray transmission window, the theoretical thickness of the thin film 5 for reflection to become 0 with respect to the incident light 4 of a wavelength of 10.6μm becomes 0,71μm and refractive index 3.72. Here, the refractive index of the substrate 1 is assumed to be 2.4, that of the thin film 3 to be the same and the thickness of the thin film 3 to be 1.10μm.
COPYRIGHT: (C)1979,JPO&Japio
JP2904478A 1978-03-14 1978-03-14 Infrared ray transmission window Granted JPS54121754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2904478A JPS54121754A (en) 1978-03-14 1978-03-14 Infrared ray transmission window

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2904478A JPS54121754A (en) 1978-03-14 1978-03-14 Infrared ray transmission window

Publications (2)

Publication Number Publication Date
JPS54121754A true JPS54121754A (en) 1979-09-21
JPS6137601B2 JPS6137601B2 (en) 1986-08-25

Family

ID=12265383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2904478A Granted JPS54121754A (en) 1978-03-14 1978-03-14 Infrared ray transmission window

Country Status (1)

Country Link
JP (1) JPS54121754A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4770479A (en) * 1985-07-01 1988-09-13 Raytheon Company Optical elements having buried layers and method of manufacture
US4772080A (en) * 1985-07-01 1988-09-20 Raytheon Company Optical elements having buried layers and method of manufacture
US4794053A (en) * 1985-07-01 1988-12-27 Raytheon Company Optical elements having buried layers
US6927899B2 (en) * 2002-08-14 2005-08-09 Optical Alchemy, Inc. Optical element for use in connection with radiation in the infrared portion of the electromagnetic spectrum and method of making same
CN109244830A (en) * 2018-10-15 2019-01-18 南京邮电大学 Include the vertical cavity surface emitting laser and preparation method thereof of silver selenide quantum dot
CN109346924A (en) * 2018-10-15 2019-02-15 南京邮电大学 Include silver telluride/telluride silver-colored zinc core-shell quanta dots vertical cavity surface emitting laser and preparation method thereof
CN109346925A (en) * 2018-10-15 2019-02-15 南京邮电大学 Include silver sulfide/vulcanization silver-colored zinc core-shell quanta dots vertical cavity surface emitting laser and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4770479A (en) * 1985-07-01 1988-09-13 Raytheon Company Optical elements having buried layers and method of manufacture
US4772080A (en) * 1985-07-01 1988-09-20 Raytheon Company Optical elements having buried layers and method of manufacture
US4794053A (en) * 1985-07-01 1988-12-27 Raytheon Company Optical elements having buried layers
US6927899B2 (en) * 2002-08-14 2005-08-09 Optical Alchemy, Inc. Optical element for use in connection with radiation in the infrared portion of the electromagnetic spectrum and method of making same
CN109244830A (en) * 2018-10-15 2019-01-18 南京邮电大学 Include the vertical cavity surface emitting laser and preparation method thereof of silver selenide quantum dot
CN109346924A (en) * 2018-10-15 2019-02-15 南京邮电大学 Include silver telluride/telluride silver-colored zinc core-shell quanta dots vertical cavity surface emitting laser and preparation method thereof
CN109346925A (en) * 2018-10-15 2019-02-15 南京邮电大学 Include silver sulfide/vulcanization silver-colored zinc core-shell quanta dots vertical cavity surface emitting laser and preparation method thereof

Also Published As

Publication number Publication date
JPS6137601B2 (en) 1986-08-25

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