JPS54113247A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54113247A JPS54113247A JP2054678A JP2054678A JPS54113247A JP S54113247 A JPS54113247 A JP S54113247A JP 2054678 A JP2054678 A JP 2054678A JP 2054678 A JP2054678 A JP 2054678A JP S54113247 A JPS54113247 A JP S54113247A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- bump
- protective film
- circumference
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To prevent a protective film from generating cracks by providing a groove, which reaches a dielectric layer along the bump circumference through a ground protective film, and giving a structure where this groove is buried around the bump.
CONSTITUTION: Dielectric layer 2 such as SiO2 and Si3N4 is provided on semiconductor substrate 1 formed by Si, and electrode pad 3 formed by Al, etc., is separated from substrate 1 by dielectric layer 2 and has one end connected to the wiring on the semiconductor element. Further, protective film 4 for the dielectric layer is formed on dielectric layer 2 and the circumference of electrode pad 3. Here, groove 8 is provided which reaches dielectric layer 2 through protective film 4 surrounding the circumference of electrode pad 3, and bump 4 is so formed that the circumference of bump 4 or the part near the circumference of bump 4 may be agreed with groove 8. As a result, the stress from bump 6 is absorbed by groove 8 and acts on dielectric layer 2 and does not act on protective film 4. Consequently, coverage part 4a of protective film 4 is prevented from generating cracks, and the lowering of reliability can be prevented.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2054678A JPS54113247A (en) | 1978-02-23 | 1978-02-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2054678A JPS54113247A (en) | 1978-02-23 | 1978-02-23 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54113247A true JPS54113247A (en) | 1979-09-04 |
JPS5733862B2 JPS5733862B2 (en) | 1982-07-20 |
Family
ID=12030143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2054678A Granted JPS54113247A (en) | 1978-02-23 | 1978-02-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54113247A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63181450A (en) * | 1987-01-23 | 1988-07-26 | Matsushita Electric Ind Co Ltd | Bump for semiconductor device and its manufacture |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59146461U (en) * | 1983-03-19 | 1984-09-29 | 鹿島建設株式会社 | Construction site curing sheet |
JPS6029860U (en) * | 1983-08-04 | 1985-02-28 | 株式会社長谷工コーポレーション | curing sheet |
-
1978
- 1978-02-23 JP JP2054678A patent/JPS54113247A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63181450A (en) * | 1987-01-23 | 1988-07-26 | Matsushita Electric Ind Co Ltd | Bump for semiconductor device and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS5733862B2 (en) | 1982-07-20 |
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