JPS54109788A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS54109788A
JPS54109788A JP1716578A JP1716578A JPS54109788A JP S54109788 A JPS54109788 A JP S54109788A JP 1716578 A JP1716578 A JP 1716578A JP 1716578 A JP1716578 A JP 1716578A JP S54109788 A JPS54109788 A JP S54109788A
Authority
JP
Japan
Prior art keywords
film
electrode
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1716578A
Other languages
Japanese (ja)
Other versions
JPS627709B2 (en
Inventor
Kimiyoshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1716578A priority Critical patent/JPS54109788A/en
Publication of JPS54109788A publication Critical patent/JPS54109788A/en
Publication of JPS627709B2 publication Critical patent/JPS627709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an IC device which features the advantages of the C-MOS transistor as well as a small element area. CONSTITUTION:N-layer 22 and 23 are provided on P-type Si substrate 21 like the known MOS, and electrode 29 and 30 are formed on oxide film 25. And 1st gate insulator film 24 is formed between layer 22 and 23, and P-type semiconductor film 26 is provided at part of film 24. The 2nd source electrode 31 and 2nd drain electrode 32 are connected across film 26 and then installed on film 25. Film 26 is covered with 2nd gate insulator film 27, and gate electrode 28 is provided on film 24 and 27 to complete the manufacture of the device. In such constitution, an IC is obtained featuring the low electric power, high speed and small element area respectively.
JP1716578A 1978-02-16 1978-02-16 Semiconductor integrated circuit device Granted JPS54109788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1716578A JPS54109788A (en) 1978-02-16 1978-02-16 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1716578A JPS54109788A (en) 1978-02-16 1978-02-16 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS54109788A true JPS54109788A (en) 1979-08-28
JPS627709B2 JPS627709B2 (en) 1987-02-18

Family

ID=11936338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1716578A Granted JPS54109788A (en) 1978-02-16 1978-02-16 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54109788A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413759A (en) * 1977-07-01 1979-02-01 Nippon Telegr & Teleph Corp <Ntt> Logic circuit using complementary mis transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413759A (en) * 1977-07-01 1979-02-01 Nippon Telegr & Teleph Corp <Ntt> Logic circuit using complementary mis transistor

Also Published As

Publication number Publication date
JPS627709B2 (en) 1987-02-18

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