JPS54107440A - Etching apparatus - Google Patents
Etching apparatusInfo
- Publication number
- JPS54107440A JPS54107440A JP1299178A JP1299178A JPS54107440A JP S54107440 A JPS54107440 A JP S54107440A JP 1299178 A JP1299178 A JP 1299178A JP 1299178 A JP1299178 A JP 1299178A JP S54107440 A JPS54107440 A JP S54107440A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- pressure reducing
- etching
- room
- reducing room
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
PURPOSE: To permit a high accurate fine processing with high efficiency by preventing the adhesion of bubbled gas occurring upon reaction to the subject matter by connecting an adjustable pressure reduction mechanism with a pressure reducing room to the inside of etching apparatus.
CONSTITUTION: The semiconductive base plate 1 covered with the thin metal film 2 and the mask 3 is dipped in the etching liquor 5 put in the apparatus 5. The vacuum pump 12 is operated to evacuate the air inside the pressure reducing room 11, or the cock 14 provided at the connecting opening 13 is opened to connect the regulating room 15 having a lower pressure and larger volume than those of the pressure reducing room 11 to the pressure reducing room 11, so that the inside pressure of the pressure reducing room 11 is lowered and a pressure-reduced area is produced at the upper space of the apparatus 4. Accordingly, the reaction gas occurring during etching reaction rises in bubbles in the etching liquor 5 and discharged to the upper space, whereby preventing the adhesion of the reaction gas to the thin metal film 2 and thus permitting the performance of good etching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1299178A JPS54107440A (en) | 1978-02-09 | 1978-02-09 | Etching apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1299178A JPS54107440A (en) | 1978-02-09 | 1978-02-09 | Etching apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54107440A true JPS54107440A (en) | 1979-08-23 |
JPS553427B2 JPS553427B2 (en) | 1980-01-25 |
Family
ID=11820664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1299178A Granted JPS54107440A (en) | 1978-02-09 | 1978-02-09 | Etching apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107440A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113735104A (en) * | 2021-10-29 | 2021-12-03 | 张家港市东大工业技术研究院 | Graphene film etching device |
-
1978
- 1978-02-09 JP JP1299178A patent/JPS54107440A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113735104A (en) * | 2021-10-29 | 2021-12-03 | 张家港市东大工业技术研究院 | Graphene film etching device |
CN113735104B (en) * | 2021-10-29 | 2021-12-28 | 张家港市东大工业技术研究院 | Graphene film etching device |
Also Published As
Publication number | Publication date |
---|---|
JPS553427B2 (en) | 1980-01-25 |
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