JPS54107440A - Etching apparatus - Google Patents

Etching apparatus

Info

Publication number
JPS54107440A
JPS54107440A JP1299178A JP1299178A JPS54107440A JP S54107440 A JPS54107440 A JP S54107440A JP 1299178 A JP1299178 A JP 1299178A JP 1299178 A JP1299178 A JP 1299178A JP S54107440 A JPS54107440 A JP S54107440A
Authority
JP
Japan
Prior art keywords
pressure
pressure reducing
etching
room
reducing room
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1299178A
Other languages
Japanese (ja)
Other versions
JPS553427B2 (en
Inventor
Tetsutada Sakurai
Fumihiko Yanagawa
Takao Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HARUNA SHIYOUKOU KK
HARUNA SHOKO KK
Nippon Telegraph and Telephone Corp
Original Assignee
HARUNA SHIYOUKOU KK
HARUNA SHOKO KK
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HARUNA SHIYOUKOU KK, HARUNA SHOKO KK, Nippon Telegraph and Telephone Corp filed Critical HARUNA SHIYOUKOU KK
Priority to JP1299178A priority Critical patent/JPS54107440A/en
Publication of JPS54107440A publication Critical patent/JPS54107440A/en
Publication of JPS553427B2 publication Critical patent/JPS553427B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To permit a high accurate fine processing with high efficiency by preventing the adhesion of bubbled gas occurring upon reaction to the subject matter by connecting an adjustable pressure reduction mechanism with a pressure reducing room to the inside of etching apparatus.
CONSTITUTION: The semiconductive base plate 1 covered with the thin metal film 2 and the mask 3 is dipped in the etching liquor 5 put in the apparatus 5. The vacuum pump 12 is operated to evacuate the air inside the pressure reducing room 11, or the cock 14 provided at the connecting opening 13 is opened to connect the regulating room 15 having a lower pressure and larger volume than those of the pressure reducing room 11 to the pressure reducing room 11, so that the inside pressure of the pressure reducing room 11 is lowered and a pressure-reduced area is produced at the upper space of the apparatus 4. Accordingly, the reaction gas occurring during etching reaction rises in bubbles in the etching liquor 5 and discharged to the upper space, whereby preventing the adhesion of the reaction gas to the thin metal film 2 and thus permitting the performance of good etching.
COPYRIGHT: (C)1979,JPO&Japio
JP1299178A 1978-02-09 1978-02-09 Etching apparatus Granted JPS54107440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1299178A JPS54107440A (en) 1978-02-09 1978-02-09 Etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1299178A JPS54107440A (en) 1978-02-09 1978-02-09 Etching apparatus

Publications (2)

Publication Number Publication Date
JPS54107440A true JPS54107440A (en) 1979-08-23
JPS553427B2 JPS553427B2 (en) 1980-01-25

Family

ID=11820664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1299178A Granted JPS54107440A (en) 1978-02-09 1978-02-09 Etching apparatus

Country Status (1)

Country Link
JP (1) JPS54107440A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113735104A (en) * 2021-10-29 2021-12-03 张家港市东大工业技术研究院 Graphene film etching device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113735104A (en) * 2021-10-29 2021-12-03 张家港市东大工业技术研究院 Graphene film etching device
CN113735104B (en) * 2021-10-29 2021-12-28 张家港市东大工业技术研究院 Graphene film etching device

Also Published As

Publication number Publication date
JPS553427B2 (en) 1980-01-25

Similar Documents

Publication Publication Date Title
JPS57111031A (en) Sputtering device
JPS54107440A (en) Etching apparatus
JPS56109354A (en) Photosensitive plate equipping device of composer
JPS56161539A (en) Feeding method for photoresist solution
JPS5310274A (en) Suction apparatus of thin metal plates
JPS5548933A (en) Forming of mesa groove
JPS5749100A (en) Double suction type fan
JPS57159029A (en) Oxidized film etching device for semiconductor wafer
JPS56135800A (en) Pump
JPS54143636A (en) Printer
JPS54141587A (en) Production of semiconductor absolute pressure transducer
JPS527006A (en) Diaphragm pump
JPS5770994A (en) Suction pump for floating substance
JPS5276761A (en) Manufacturing method of heat pipe
JPS5253367A (en) Plate lifting apparatus
JPS57149726A (en) Manufacture of semiconductor device
JPS5375864A (en) Vacuum chucking device
JPS53132621A (en) Constant negative pressure type carburettor
JPS57164529A (en) Dry etching method
JPS55154583A (en) Etching processing apparatus
JPS5735176A (en) Check valve for reciprocating pump
JPS5362475A (en) Photographic processing method of semiconductor wafers
JPS56156565A (en) Change-over valve with air vent valve
JPS5474024A (en) Fuel cock
JPS54131346A (en) Waste water treatment by dipping former sticking membrane