JPS5388583A - Non-volatile memory element - Google Patents

Non-volatile memory element

Info

Publication number
JPS5388583A
JPS5388583A JP340477A JP340477A JPS5388583A JP S5388583 A JPS5388583 A JP S5388583A JP 340477 A JP340477 A JP 340477A JP 340477 A JP340477 A JP 340477A JP S5388583 A JPS5388583 A JP S5388583A
Authority
JP
Japan
Prior art keywords
volatile memory
memory element
interferring
pair
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP340477A
Other languages
Japanese (ja)
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP340477A priority Critical patent/JPS5388583A/en
Publication of JPS5388583A publication Critical patent/JPS5388583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To lower driving voltage by interferring the carriers produced by forward bias with the transistor part formed by a pair of opposite conductivity type region and a floating gate.
JP340477A 1977-01-13 1977-01-13 Non-volatile memory element Pending JPS5388583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP340477A JPS5388583A (en) 1977-01-13 1977-01-13 Non-volatile memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP340477A JPS5388583A (en) 1977-01-13 1977-01-13 Non-volatile memory element

Publications (1)

Publication Number Publication Date
JPS5388583A true JPS5388583A (en) 1978-08-04

Family

ID=11556432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP340477A Pending JPS5388583A (en) 1977-01-13 1977-01-13 Non-volatile memory element

Country Status (1)

Country Link
JP (1) JPS5388583A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159357A (en) * 1981-03-27 1982-10-01 Agency Of Ind Science & Technol Small sized electronic device
JPS57160166A (en) * 1981-03-27 1982-10-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS58106874A (en) * 1981-12-04 1983-06-25 イ−サム・リサ−チ・デイベロツプメント・カンパニ−・オブ・ザ・ヘブリユ・ユニバ−シテイ・オブ・エルサレム Electrically programmable memory disposed on substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159357A (en) * 1981-03-27 1982-10-01 Agency Of Ind Science & Technol Small sized electronic device
JPS57160166A (en) * 1981-03-27 1982-10-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS58106874A (en) * 1981-12-04 1983-06-25 イ−サム・リサ−チ・デイベロツプメント・カンパニ−・オブ・ザ・ヘブリユ・ユニバ−シテイ・オブ・エルサレム Electrically programmable memory disposed on substrate

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