JPS5389379A - Memory element - Google Patents
Memory elementInfo
- Publication number
- JPS5389379A JPS5389379A JP452277A JP452277A JPS5389379A JP S5389379 A JPS5389379 A JP S5389379A JP 452277 A JP452277 A JP 452277A JP 452277 A JP452277 A JP 452277A JP S5389379 A JPS5389379 A JP S5389379A
- Authority
- JP
- Japan
- Prior art keywords
- memory element
- type region
- electron
- drain
- volatile memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To lower the electron injection to a floating gate and the electron release voltage from there and reduce access time by providing an N type region other than source and drain and further forming a phi type region therein in an N channel type non-volatile memory element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP452277A JPS5389379A (en) | 1977-01-17 | 1977-01-17 | Memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP452277A JPS5389379A (en) | 1977-01-17 | 1977-01-17 | Memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5389379A true JPS5389379A (en) | 1978-08-05 |
Family
ID=11586368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP452277A Pending JPS5389379A (en) | 1977-01-17 | 1977-01-17 | Memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5389379A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55127070A (en) * | 1979-03-14 | 1980-10-01 | Centre Electron Horloger | Electrically erasable and reprogrammable permanent memory cell |
-
1977
- 1977-01-17 JP JP452277A patent/JPS5389379A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55127070A (en) * | 1979-03-14 | 1980-10-01 | Centre Electron Horloger | Electrically erasable and reprogrammable permanent memory cell |
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