JPS5382168A - Lead frame for semiconductor device - Google Patents

Lead frame for semiconductor device

Info

Publication number
JPS5382168A
JPS5382168A JP15885376A JP15885376A JPS5382168A JP S5382168 A JPS5382168 A JP S5382168A JP 15885376 A JP15885376 A JP 15885376A JP 15885376 A JP15885376 A JP 15885376A JP S5382168 A JPS5382168 A JP S5382168A
Authority
JP
Japan
Prior art keywords
lead frame
semiconductor device
lead
lamination
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15885376A
Other languages
Japanese (ja)
Inventor
Toshio Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15885376A priority Critical patent/JPS5382168A/en
Publication of JPS5382168A publication Critical patent/JPS5382168A/en
Pending legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain the lead frame which can improve the reliability of element and is excellent in heat dissipation, by forming the eutetic alloy through the coating of either of silver, copper, or Al on the surface of the lead surface for element mounting by 5 to 50μ and the lamination of gold.
COPYRIGHT: (C)1978,JPO&Japio
JP15885376A 1976-12-27 1976-12-27 Lead frame for semiconductor device Pending JPS5382168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15885376A JPS5382168A (en) 1976-12-27 1976-12-27 Lead frame for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15885376A JPS5382168A (en) 1976-12-27 1976-12-27 Lead frame for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5382168A true JPS5382168A (en) 1978-07-20

Family

ID=15680829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15885376A Pending JPS5382168A (en) 1976-12-27 1976-12-27 Lead frame for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5382168A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684975A (en) * 1985-12-16 1987-08-04 National Semiconductor Corporation Molded semiconductor package having improved heat dissipation
US5146310A (en) * 1989-10-16 1992-09-08 National Semiconductor Corp. Thermally enhanced leadframe
US5518684A (en) * 1994-03-09 1996-05-21 National Semiconductor Corporation Method of making a molded lead frame
US6297074B1 (en) * 1990-07-11 2001-10-02 Hitachi, Ltd. Film carrier tape and laminated multi-chip semiconductor device incorporating the same and method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684975A (en) * 1985-12-16 1987-08-04 National Semiconductor Corporation Molded semiconductor package having improved heat dissipation
US5146310A (en) * 1989-10-16 1992-09-08 National Semiconductor Corp. Thermally enhanced leadframe
US6297074B1 (en) * 1990-07-11 2001-10-02 Hitachi, Ltd. Film carrier tape and laminated multi-chip semiconductor device incorporating the same and method thereof
US5518684A (en) * 1994-03-09 1996-05-21 National Semiconductor Corporation Method of making a molded lead frame

Similar Documents

Publication Publication Date Title
JPS5239378A (en) Silicon-gated mos type semiconductor device
JPS5382168A (en) Lead frame for semiconductor device
JPS53126276A (en) Heat dissipation construction of multichip mounting substrate
JPS53144695A (en) Semiconductor laser device
JPS5394885A (en) Mount structure for semiconductor laser element
JPS5378768A (en) Wire bonding method of semiconductor element
JPS5422163A (en) Semiconductor device
JPS5314558A (en) Semiconductor device
JPS5348463A (en) Semiconductor integrated circuit support
JPS5348671A (en) Electrode structure of semiconductor element
JPS5411690A (en) Semiconductor laser unit
JPS5318957A (en) Electrode structure of semiconductor device
JPS5456766A (en) Semiconductor device
JPS52125272A (en) Substrate to which semiconductor device is mounted
JPS5295175A (en) Pellet bonding
JPS52109872A (en) Semiconductor device
JPS5220783A (en) Semi-conductor unit
JPS5295171A (en) Electrode for semi-conductor
JPS5432076A (en) Mesa-type semiconductor device
JPS5363978A (en) Semiconductor device
JPS542069A (en) Semiconductor device
JPS5313875A (en) Semiconductor device
JPS5344171A (en) Semiconductor device
JPS5414159A (en) Manufacture for semiconductor device
JPS5324269A (en) Integrated circuit devic e