JPS5368171A - Method and apparatus for plasma treatment - Google Patents
Method and apparatus for plasma treatmentInfo
- Publication number
- JPS5368171A JPS5368171A JP14375276A JP14375276A JPS5368171A JP S5368171 A JPS5368171 A JP S5368171A JP 14375276 A JP14375276 A JP 14375276A JP 14375276 A JP14375276 A JP 14375276A JP S5368171 A JPS5368171 A JP S5368171A
- Authority
- JP
- Japan
- Prior art keywords
- plasma treatment
- ions
- treat
- substrate
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14375276A JPS5368171A (en) | 1976-11-30 | 1976-11-30 | Method and apparatus for plasma treatment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14375276A JPS5368171A (en) | 1976-11-30 | 1976-11-30 | Method and apparatus for plasma treatment |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15780783A Division JPS5980932A (ja) | 1983-08-31 | 1983-08-31 | プラズマ処理装置 |
JP62292004A Division JPS63190162A (ja) | 1987-11-20 | 1987-11-20 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5368171A true JPS5368171A (en) | 1978-06-17 |
JPS6318323B2 JPS6318323B2 (ja) | 1988-04-18 |
Family
ID=15346185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14375276A Granted JPS5368171A (en) | 1976-11-30 | 1976-11-30 | Method and apparatus for plasma treatment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5368171A (ja) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5376758A (en) * | 1976-12-20 | 1978-07-07 | Nippon Telegr & Teleph Corp <Ntt> | Plasma etching method |
JPS55118637A (en) * | 1979-03-06 | 1980-09-11 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Plasma etching apparatus |
JPS5664437A (en) * | 1979-08-22 | 1981-06-01 | Onera (Off Nat Aerospatiale) | Method and device for chemically etching integrated circuit by dry process |
JPS5694745A (en) * | 1979-12-28 | 1981-07-31 | Sony Corp | Plasma treatment device |
JPS56100423A (en) * | 1979-12-26 | 1981-08-12 | Western Electric Co | Method and device for imporving characteristics of gas plasma reaction |
JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
JPS5750435A (en) * | 1980-09-11 | 1982-03-24 | Toshiba Corp | Plasma etching device |
US4352725A (en) * | 1979-12-15 | 1982-10-05 | Anelva Corporation | Dry etching device comprising an electrode for controlling etch rate |
JPS57210631A (en) * | 1981-06-19 | 1982-12-24 | Toshiba Corp | Reactive type ion etching method |
JPS58122736A (ja) * | 1982-01-14 | 1983-07-21 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁膜形成法 |
JPS5934639A (ja) * | 1982-08-21 | 1984-02-25 | Mitsubishi Electric Corp | 窒化シリコン膜形成装置 |
JPS59192833U (ja) * | 1983-06-08 | 1984-12-21 | 日本電子株式会社 | 光cvd装置 |
JPS6077413A (ja) * | 1983-10-04 | 1985-05-02 | Ulvac Corp | レ−ザ−励起プロセス装置 |
JPS6091646A (ja) * | 1983-10-25 | 1985-05-23 | Nec Corp | プラズマ気相成長法 |
JPS60239015A (ja) * | 1984-05-11 | 1985-11-27 | Toyobo Co Ltd | アモルフアスシリコン膜の形成方法 |
JPS63288021A (ja) * | 1986-10-17 | 1988-11-25 | Hitachi Ltd | プラズマ処理方法 |
JPH01180970A (ja) * | 1988-01-13 | 1989-07-18 | Tadahiro Omi | 減圧表面処理装置 |
US5160398A (en) * | 1989-11-17 | 1992-11-03 | Sony Corporation | Etching method and apparatus |
JPH0785997A (ja) * | 1993-09-20 | 1995-03-31 | Ii C Kagaku Kk | 大気圧グロ−放電プラズマ処理法 |
JPH09208726A (ja) * | 1996-02-02 | 1997-08-12 | Sekisui Chem Co Ltd | プラズマを利用した基材の表面処理方法 |
-
1976
- 1976-11-30 JP JP14375276A patent/JPS5368171A/ja active Granted
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5538053B2 (ja) * | 1976-12-20 | 1980-10-02 | ||
JPS5376758A (en) * | 1976-12-20 | 1978-07-07 | Nippon Telegr & Teleph Corp <Ntt> | Plasma etching method |
JPS55118637A (en) * | 1979-03-06 | 1980-09-11 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Plasma etching apparatus |
JPS5664437A (en) * | 1979-08-22 | 1981-06-01 | Onera (Off Nat Aerospatiale) | Method and device for chemically etching integrated circuit by dry process |
JPH0313741B2 (ja) * | 1979-08-22 | 1991-02-25 | Onera (Off Nat Aerospatiale) | |
US4352725A (en) * | 1979-12-15 | 1982-10-05 | Anelva Corporation | Dry etching device comprising an electrode for controlling etch rate |
JPS56100423A (en) * | 1979-12-26 | 1981-08-12 | Western Electric Co | Method and device for imporving characteristics of gas plasma reaction |
JPS5694745A (en) * | 1979-12-28 | 1981-07-31 | Sony Corp | Plasma treatment device |
JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
JPS6315348B2 (ja) * | 1980-03-14 | 1988-04-04 | Canon Kk | |
JPS5750435A (en) * | 1980-09-11 | 1982-03-24 | Toshiba Corp | Plasma etching device |
JPH0136247B2 (ja) * | 1980-09-11 | 1989-07-31 | Toshiba Kk | |
JPS57210631A (en) * | 1981-06-19 | 1982-12-24 | Toshiba Corp | Reactive type ion etching method |
JPS58122736A (ja) * | 1982-01-14 | 1983-07-21 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁膜形成法 |
JPS5934639A (ja) * | 1982-08-21 | 1984-02-25 | Mitsubishi Electric Corp | 窒化シリコン膜形成装置 |
JPS59192833U (ja) * | 1983-06-08 | 1984-12-21 | 日本電子株式会社 | 光cvd装置 |
JPS6077413A (ja) * | 1983-10-04 | 1985-05-02 | Ulvac Corp | レ−ザ−励起プロセス装置 |
JPS6091646A (ja) * | 1983-10-25 | 1985-05-23 | Nec Corp | プラズマ気相成長法 |
JPS60239015A (ja) * | 1984-05-11 | 1985-11-27 | Toyobo Co Ltd | アモルフアスシリコン膜の形成方法 |
JPS63288021A (ja) * | 1986-10-17 | 1988-11-25 | Hitachi Ltd | プラズマ処理方法 |
JPH01180970A (ja) * | 1988-01-13 | 1989-07-18 | Tadahiro Omi | 減圧表面処理装置 |
US5160398A (en) * | 1989-11-17 | 1992-11-03 | Sony Corporation | Etching method and apparatus |
US5314575A (en) * | 1989-11-17 | 1994-05-24 | Sony Corporation | Etching method and apparatus |
JPH0785997A (ja) * | 1993-09-20 | 1995-03-31 | Ii C Kagaku Kk | 大気圧グロ−放電プラズマ処理法 |
JPH09208726A (ja) * | 1996-02-02 | 1997-08-12 | Sekisui Chem Co Ltd | プラズマを利用した基材の表面処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6318323B2 (ja) | 1988-04-18 |
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