JPS5685827A - Plasma etching treating method and treatment device - Google Patents

Plasma etching treating method and treatment device

Info

Publication number
JPS5685827A
JPS5685827A JP16250879A JP16250879A JPS5685827A JP S5685827 A JPS5685827 A JP S5685827A JP 16250879 A JP16250879 A JP 16250879A JP 16250879 A JP16250879 A JP 16250879A JP S5685827 A JPS5685827 A JP S5685827A
Authority
JP
Japan
Prior art keywords
plasma
plasma etching
treatment device
treating method
initial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16250879A
Other languages
Japanese (ja)
Other versions
JPS5852325B2 (en
Inventor
Kenichi Kobayashi
Hiroshi Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54162508A priority Critical patent/JPS5852325B2/en
Publication of JPS5685827A publication Critical patent/JPS5685827A/en
Publication of JPS5852325B2 publication Critical patent/JPS5852325B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To apply a normal plasma etching by producing an initial plasma with the third electrode inserted and by removing same after the stabilization. CONSTITUTION:At an initial stage of producing plasma, an elecrode 12 is inserted between electrodes 2, 3 and applied a high frequency voltage 4 by means of a switch 13 to produce the initial plasma between the electrodes 12 and 3. When the plasma is stabilized, the electode 12 is retreated and the high frequency voltage is applied to the electrode 2 by changing over the switch 13. With this construction, the treated susbstance 1 is not placed in the first unstable plasma, so that it is not adversely influenced and the plasma etching is performed in normal manner.
JP54162508A 1979-12-14 1979-12-14 Plasma etching processing method and processing equipment Expired JPS5852325B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54162508A JPS5852325B2 (en) 1979-12-14 1979-12-14 Plasma etching processing method and processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54162508A JPS5852325B2 (en) 1979-12-14 1979-12-14 Plasma etching processing method and processing equipment

Publications (2)

Publication Number Publication Date
JPS5685827A true JPS5685827A (en) 1981-07-13
JPS5852325B2 JPS5852325B2 (en) 1983-11-22

Family

ID=15755948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54162508A Expired JPS5852325B2 (en) 1979-12-14 1979-12-14 Plasma etching processing method and processing equipment

Country Status (1)

Country Link
JP (1) JPS5852325B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256431A (en) * 1986-04-30 1987-11-09 Plasma Syst:Kk Method and apparatus for plasma treatment of semiconductor substrate
JPH01192118A (en) * 1988-01-28 1989-08-02 Fujitsu Ltd Resist film removing device
US5417798A (en) * 1991-01-24 1995-05-23 Sumitomo Electric Industries, Ltd. Etching method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676242A (en) * 1979-11-26 1981-06-23 Tokyo Ohka Kogyo Co Ltd Treating apparatus using gas plasma reaction

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676242A (en) * 1979-11-26 1981-06-23 Tokyo Ohka Kogyo Co Ltd Treating apparatus using gas plasma reaction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256431A (en) * 1986-04-30 1987-11-09 Plasma Syst:Kk Method and apparatus for plasma treatment of semiconductor substrate
JPH01192118A (en) * 1988-01-28 1989-08-02 Fujitsu Ltd Resist film removing device
US5417798A (en) * 1991-01-24 1995-05-23 Sumitomo Electric Industries, Ltd. Etching method

Also Published As

Publication number Publication date
JPS5852325B2 (en) 1983-11-22

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