Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP12878276ApriorityCriticalpatent/JPS5354483A/en
Publication of JPS5354483ApublicationCriticalpatent/JPS5354483A/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Abstract
PURPOSE: To align gate electrode and drain region and form a MOS transistor of a small area by forming the drain region through ion implantation using the gate electrode as a mask.
COPYRIGHT: (C)1978,JPO&Japio
JP12878276A1976-10-281976-10-28Insulated gate type field effect transistor
PendingJPS5354483A
(en)