JPS53132276A - Insulation gate type field effect semiconductor device - Google Patents

Insulation gate type field effect semiconductor device

Info

Publication number
JPS53132276A
JPS53132276A JP4707277A JP4707277A JPS53132276A JP S53132276 A JPS53132276 A JP S53132276A JP 4707277 A JP4707277 A JP 4707277A JP 4707277 A JP4707277 A JP 4707277A JP S53132276 A JPS53132276 A JP S53132276A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
type field
gate type
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4707277A
Other languages
Japanese (ja)
Inventor
Toshihisa Suenaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4707277A priority Critical patent/JPS53132276A/en
Publication of JPS53132276A publication Critical patent/JPS53132276A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To shut off the path between the source region and drain region to eliminate generation of leakage current without changing the characteristics by completely enveloping one or both of source region and drain region by using metal which constitute the gate electrode.
COPYRIGHT: (C)1978,JPO&Japio
JP4707277A 1977-04-22 1977-04-22 Insulation gate type field effect semiconductor device Pending JPS53132276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4707277A JPS53132276A (en) 1977-04-22 1977-04-22 Insulation gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4707277A JPS53132276A (en) 1977-04-22 1977-04-22 Insulation gate type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS53132276A true JPS53132276A (en) 1978-11-17

Family

ID=12764953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4707277A Pending JPS53132276A (en) 1977-04-22 1977-04-22 Insulation gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS53132276A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
US4785343A (en) * 1985-06-07 1988-11-15 Fujitsu Limited MIS FET semiconductor device with improved leakage current

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
US4785343A (en) * 1985-06-07 1988-11-15 Fujitsu Limited MIS FET semiconductor device with improved leakage current

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