JPS53132276A - Insulation gate type field effect semiconductor device - Google Patents
Insulation gate type field effect semiconductor deviceInfo
- Publication number
- JPS53132276A JPS53132276A JP4707277A JP4707277A JPS53132276A JP S53132276 A JPS53132276 A JP S53132276A JP 4707277 A JP4707277 A JP 4707277A JP 4707277 A JP4707277 A JP 4707277A JP S53132276 A JPS53132276 A JP S53132276A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field effect
- type field
- gate type
- effect semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To shut off the path between the source region and drain region to eliminate generation of leakage current without changing the characteristics by completely enveloping one or both of source region and drain region by using metal which constitute the gate electrode.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4707277A JPS53132276A (en) | 1977-04-22 | 1977-04-22 | Insulation gate type field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4707277A JPS53132276A (en) | 1977-04-22 | 1977-04-22 | Insulation gate type field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53132276A true JPS53132276A (en) | 1978-11-17 |
Family
ID=12764953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4707277A Pending JPS53132276A (en) | 1977-04-22 | 1977-04-22 | Insulation gate type field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53132276A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4684967A (en) * | 1984-05-04 | 1987-08-04 | Integrated Logic Systems, Inc. | Low capacitance transistor cell element and transistor array |
US4785343A (en) * | 1985-06-07 | 1988-11-15 | Fujitsu Limited | MIS FET semiconductor device with improved leakage current |
-
1977
- 1977-04-22 JP JP4707277A patent/JPS53132276A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4684967A (en) * | 1984-05-04 | 1987-08-04 | Integrated Logic Systems, Inc. | Low capacitance transistor cell element and transistor array |
US4785343A (en) * | 1985-06-07 | 1988-11-15 | Fujitsu Limited | MIS FET semiconductor device with improved leakage current |
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