Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
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Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP12921276ApriorityCriticalpatent/JPS5353966A/en
Publication of JPS5353966ApublicationCriticalpatent/JPS5353966A/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
PURPOSE: To reduce mask ailgnment processes and form a thick electrode metal by partial removal of a deposition layer by making use of the differences in the thickness of the deposition layer of a stepped surface.
COPYRIGHT: (C)1978,JPO&Japio
JP12921276A1976-10-261976-10-26Production of semiconductor device
PendingJPS5353966A
(en)