JPS5351981A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5351981A JPS5351981A JP12695976A JP12695976A JPS5351981A JP S5351981 A JPS5351981 A JP S5351981A JP 12695976 A JP12695976 A JP 12695976A JP 12695976 A JP12695976 A JP 12695976A JP S5351981 A JPS5351981 A JP S5351981A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- substrate
- layer
- injuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To manufacture duplicated insulating layers on the substrate and to manufacture the impurity added layer without injuring the flatness of the substrate surface from the second layer opening part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12695976A JPS5351981A (en) | 1976-10-21 | 1976-10-21 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12695976A JPS5351981A (en) | 1976-10-21 | 1976-10-21 | Manufacture for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5351981A true JPS5351981A (en) | 1978-05-11 |
JPS6118871B2 JPS6118871B2 (en) | 1986-05-14 |
Family
ID=14948122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12695976A Granted JPS5351981A (en) | 1976-10-21 | 1976-10-21 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5351981A (en) |
-
1976
- 1976-10-21 JP JP12695976A patent/JPS5351981A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6118871B2 (en) | 1986-05-14 |
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