JPS5344487A - Process for preparing large surfaced silicon plate not supported on substrate - Google Patents

Process for preparing large surfaced silicon plate not supported on substrate

Info

Publication number
JPS5344487A
JPS5344487A JP10215477A JP10215477A JPS5344487A JP S5344487 A JPS5344487 A JP S5344487A JP 10215477 A JP10215477 A JP 10215477A JP 10215477 A JP10215477 A JP 10215477A JP S5344487 A JPS5344487 A JP S5344487A
Authority
JP
Japan
Prior art keywords
supported
substrate
silicon plate
preparing large
large surfaced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10215477A
Other languages
English (en)
Other versions
JPS577117B2 (ja
Inventor
Autohiiru Berunharuto
Guriisuhanmaa Ruudorufu
Ketsupuru Furantsu
Ranku Buinfuriito
Jirutoru Eaharuto
Ieruku Raato Haintsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS5344487A publication Critical patent/JPS5344487A/ja
Publication of JPS577117B2 publication Critical patent/JPS577117B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/005—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/914—Crystallization on a continuous moving substrate or cooling surface, e.g. wheel, cylinder, belt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing
JP10215477A 1976-08-25 1977-08-25 Process for preparing large surfaced silicon plate not supported on substrate Granted JPS5344487A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2638270A DE2638270C2 (de) 1976-08-25 1976-08-25 Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium

Publications (2)

Publication Number Publication Date
JPS5344487A true JPS5344487A (en) 1978-04-21
JPS577117B2 JPS577117B2 (ja) 1982-02-08

Family

ID=5986350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10215477A Granted JPS5344487A (en) 1976-08-25 1977-08-25 Process for preparing large surfaced silicon plate not supported on substrate

Country Status (6)

Country Link
US (1) US4131659A (ja)
JP (1) JPS5344487A (ja)
CA (1) CA1062130A (ja)
DE (1) DE2638270C2 (ja)
FR (1) FR2363200A1 (ja)
GB (1) GB1547709A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216223A (ja) * 1987-02-24 1987-09-22 Semiconductor Energy Lab Co Ltd 半導体処理装置
JPS6366923A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 連続式半導体被膜形成装置
JPS6366922A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 半導体装置作製方法
JPH01283376A (ja) * 1987-12-04 1989-11-14 Watkins Johnson Co 大気圧化学蒸着装置および方法
WO2017047802A1 (ja) * 2015-09-18 2017-03-23 東邦化成株式会社 太陽電池モジュールのリサイクル方法

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2033355B (en) * 1978-09-07 1982-05-06 Standard Telephones Cables Ltd Semiconductor processing
US4238436A (en) * 1979-05-10 1980-12-09 General Instrument Corporation Method of obtaining polycrystalline silicon
US4271235A (en) * 1979-05-10 1981-06-02 Lawrence Hill Method of obtaining polycrystalline silicon and workpiece useful therein
US4370288A (en) * 1980-11-18 1983-01-25 Motorola, Inc. Process for forming self-supporting semiconductor film
US4561486A (en) * 1981-04-30 1985-12-31 Hoxan Corporation Method for fabricating polycrystalline silicon wafer
US4419178A (en) * 1981-06-19 1983-12-06 Rode Daniel L Continuous ribbon epitaxy
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
US5110531A (en) * 1982-12-27 1992-05-05 Sri International Process and apparatus for casting multiple silicon wafer articles
DE3305933A1 (de) * 1983-02-21 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von polykristallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen
DE3404818A1 (de) * 1984-02-10 1985-08-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum erzeugen eines pn- ueberganges in einem nach dem durchlaufverfahren hergestellten siliziumband
EP0173715B1 (en) * 1984-02-13 1992-04-22 SCHMITT, Jerome J. III Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby
US4590024A (en) * 1984-03-29 1986-05-20 Solavolt International Silicon deposition process
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
US4705659A (en) * 1985-04-01 1987-11-10 Motorola, Inc. Carbon film oxidation for free-standing film formation
DE3518829A1 (de) * 1985-05-24 1986-11-27 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen
US4773355A (en) * 1985-06-10 1988-09-27 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition
US4663828A (en) * 1985-10-11 1987-05-12 Energy Conversion Devices, Inc. Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
US4663829A (en) * 1985-10-11 1987-05-12 Energy Conversion Devices, Inc. Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
AT391224B (de) * 1988-01-26 1990-09-10 Thallner Erich Belichtungseinrichtung fuer lichtempfindlich gemachte substrate
JPH07122142B2 (ja) * 1990-12-25 1995-12-25 中外炉工業株式会社 シートプラズマｃｖｄ装置
JP3242452B2 (ja) * 1992-06-19 2001-12-25 三菱電機株式会社 薄膜太陽電池の製造方法
US6200389B1 (en) 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
TW359943B (en) * 1994-07-18 1999-06-01 Silicon Valley Group Thermal Single body injector and method for delivering gases to a surface
US5556791A (en) * 1995-01-03 1996-09-17 Texas Instruments Incorporated Method of making optically fused semiconductor powder for solar cells
DE19605245A1 (de) * 1996-02-13 1997-08-14 Siemens Ag Verfahren zur Erzeugung von Kristallisationszentren auf der Oberfläche eines Substrats
US5800611A (en) * 1997-09-08 1998-09-01 Christensen; Howard Method for making large area single crystal silicon sheets
DE19903798A1 (de) * 1999-02-01 2000-08-10 Angew Solarenergie Ase Gmbh Verfahren und Anordnung zur Wärmebehandlung von flächigen Gegenständen
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
KR100421914B1 (ko) * 2001-12-28 2004-03-11 엘지.필립스 엘시디 주식회사 액정표시장치 제조 방법
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
DE102004010055A1 (de) * 2004-03-02 2005-09-22 Degussa Ag Verfahren zur Herstellung von Silicium
EP1763086A1 (en) * 2005-09-09 2007-03-14 Interuniversitair Micro-Elektronica Centrum Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method
US9683286B2 (en) 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
FR2935838B1 (fr) * 2008-09-05 2012-11-23 Commissariat Energie Atomique Procede de preparation d'une couche mince auto-supportee de silicium cristallise

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918430A (ja) * 1972-06-09 1974-02-18
JPS51140803A (en) * 1975-05-19 1976-12-04 Gen Electric Process and apparatus for melting in zone with temperature gradient

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL218408A (ja) * 1954-05-18 1900-01-01
NL270516A (ja) * 1960-11-30
NL270518A (ja) * 1960-11-30
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
US3565674A (en) * 1967-10-30 1971-02-23 Motorola Inc Deposition of silicon nitride
US3900540A (en) * 1970-06-04 1975-08-19 Pfizer Method for making a film of refractory material having bi-directional reinforcing properties
US3969163A (en) * 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4918430A (ja) * 1972-06-09 1974-02-18
JPS51140803A (en) * 1975-05-19 1976-12-04 Gen Electric Process and apparatus for melting in zone with temperature gradient

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216223A (ja) * 1987-02-24 1987-09-22 Semiconductor Energy Lab Co Ltd 半導体処理装置
JPH0447455B2 (ja) * 1987-02-24 1992-08-04 Handotai Energy Kenkyusho
JPS6366923A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 連続式半導体被膜形成装置
JPS6366922A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 半導体装置作製方法
JPH01283376A (ja) * 1987-12-04 1989-11-14 Watkins Johnson Co 大気圧化学蒸着装置および方法
WO2017047802A1 (ja) * 2015-09-18 2017-03-23 東邦化成株式会社 太陽電池モジュールのリサイクル方法
JPWO2017047802A1 (ja) * 2015-09-18 2018-07-19 東邦化成株式会社 太陽電池モジュールのリサイクル方法

Also Published As

Publication number Publication date
US4131659A (en) 1978-12-26
DE2638270C2 (de) 1983-01-27
DE2638270A1 (de) 1978-03-02
CA1062130A (en) 1979-09-11
FR2363200A1 (fr) 1978-03-24
JPS577117B2 (ja) 1982-02-08
FR2363200B1 (ja) 1980-02-01
GB1547709A (en) 1979-06-27

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