JPS5340272A - Apparatus for diffusing semiconductor substrate - Google Patents

Apparatus for diffusing semiconductor substrate

Info

Publication number
JPS5340272A
JPS5340272A JP11451877A JP11451877A JPS5340272A JP S5340272 A JPS5340272 A JP S5340272A JP 11451877 A JP11451877 A JP 11451877A JP 11451877 A JP11451877 A JP 11451877A JP S5340272 A JPS5340272 A JP S5340272A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
diffusing
diffusing semiconductor
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11451877A
Other languages
Japanese (ja)
Inventor
Raiteru Kuruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5340272A publication Critical patent/JPS5340272A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP11451877A 1976-09-23 1977-09-22 Apparatus for diffusing semiconductor substrate Pending JPS5340272A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762642813 DE2642813A1 (en) 1976-09-23 1976-09-23 Dopant diffusion furnace - with semiconductor wafers stacked in semiconductor tube with axial and radial holes in wall

Publications (1)

Publication Number Publication Date
JPS5340272A true JPS5340272A (en) 1978-04-12

Family

ID=5988652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11451877A Pending JPS5340272A (en) 1976-09-23 1977-09-22 Apparatus for diffusing semiconductor substrate

Country Status (2)

Country Link
JP (1) JPS5340272A (en)
DE (1) DE2642813A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391463U (en) * 1976-12-27 1978-07-26
JPS6247941A (en) * 1985-08-28 1987-03-02 Toshiba Corp Small-sized high pressure metal vapor discharge lamp

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3117072A1 (en) * 1981-04-29 1982-11-18 Consortium für elektrochemische Industrie GmbH, 8000 München "METHOD FOR PRODUCING DOPED SEMICONDUCTOR BODIES"
DE3906075A1 (en) * 1989-02-27 1990-08-30 Soehlbrand Heinrich Dr Dipl Ch METHOD FOR THERMALLY TREATING SEMICONDUCTOR MATERIALS AND DEVICE FOR CARRYING OUT THE SAME
EP0444356A3 (en) * 1989-12-29 1992-09-30 The Carborundum Company Diffusion apparatus for semiconductors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4827493A (en) * 1971-08-11 1973-04-11
JPS4918263A (en) * 1972-06-08 1974-02-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4827493A (en) * 1971-08-11 1973-04-11
JPS4918263A (en) * 1972-06-08 1974-02-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391463U (en) * 1976-12-27 1978-07-26
JPS6247941A (en) * 1985-08-28 1987-03-02 Toshiba Corp Small-sized high pressure metal vapor discharge lamp
JPH0475625B2 (en) * 1985-08-28 1992-12-01 Toshiba Lighting & Technology

Also Published As

Publication number Publication date
DE2642813A1 (en) 1978-03-30

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