JPS5326685A - Sem iconductor device containing ill elemnent and its manufacture - Google Patents
Sem iconductor device containing ill elemnent and its manufactureInfo
- Publication number
- JPS5326685A JPS5326685A JP10060376A JP10060376A JPS5326685A JP S5326685 A JPS5326685 A JP S5326685A JP 10060376 A JP10060376 A JP 10060376A JP 10060376 A JP10060376 A JP 10060376A JP S5326685 A JPS5326685 A JP S5326685A
- Authority
- JP
- Japan
- Prior art keywords
- elemnent
- manufacture
- device containing
- sem iconductor
- containing ill
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an I<2>L element for high-speed use by injecting phosphor selectively on the As diffusion layer surface in a P-type substrate along with a buried layer containing protrusions selectively on the surface and lowering the concentration of N epitaxial layer on the buried layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10060376A JPS5326685A (en) | 1976-08-25 | 1976-08-25 | Sem iconductor device containing ill elemnent and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10060376A JPS5326685A (en) | 1976-08-25 | 1976-08-25 | Sem iconductor device containing ill elemnent and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5326685A true JPS5326685A (en) | 1978-03-11 |
Family
ID=14278428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10060376A Pending JPS5326685A (en) | 1976-08-25 | 1976-08-25 | Sem iconductor device containing ill elemnent and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5326685A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4422735A (en) * | 1980-04-22 | 1983-12-27 | Olympus Optical Company, Ltd. | Fundus camera |
-
1976
- 1976-08-25 JP JP10060376A patent/JPS5326685A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4422735A (en) * | 1980-04-22 | 1983-12-27 | Olympus Optical Company, Ltd. | Fundus camera |
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