JPS53136975A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS53136975A JPS53136975A JP5222277A JP5222277A JPS53136975A JP S53136975 A JPS53136975 A JP S53136975A JP 5222277 A JP5222277 A JP 5222277A JP 5222277 A JP5222277 A JP 5222277A JP S53136975 A JPS53136975 A JP S53136975A
- Authority
- JP
- Japan
- Prior art keywords
- charge transfer
- transfer device
- applying
- final electrode
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To simplify the constitution of the external circuit as well as to reduce the number of the terminal, by applying the charge transfer driving pulse to one charge transfer final electrode of the charge transfer path and applying the rest gate pulse which sets up the floating diffusion layer to the reference potential with every signal charge detection to the other final electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5222277A JPS53136975A (en) | 1977-05-06 | 1977-05-06 | Charge transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5222277A JPS53136975A (en) | 1977-05-06 | 1977-05-06 | Charge transfer device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53136975A true JPS53136975A (en) | 1978-11-29 |
Family
ID=12908714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5222277A Pending JPS53136975A (en) | 1977-05-06 | 1977-05-06 | Charge transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53136975A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01248665A (en) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | Electric charge transferring device |
-
1977
- 1977-05-06 JP JP5222277A patent/JPS53136975A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01248665A (en) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | Electric charge transferring device |
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