JPS5291383A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5291383A
JPS5291383A JP732076A JP732076A JPS5291383A JP S5291383 A JPS5291383 A JP S5291383A JP 732076 A JP732076 A JP 732076A JP 732076 A JP732076 A JP 732076A JP S5291383 A JPS5291383 A JP S5291383A
Authority
JP
Japan
Prior art keywords
layer
memory device
semiconductor memory
write
al2o3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP732076A
Other languages
Japanese (ja)
Inventor
Hidenobu Mochizuki
Takashi Shimada
Tadayoshi Mifune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP732076A priority Critical patent/JPS5291383A/en
Publication of JPS5291383A publication Critical patent/JPS5291383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To reduce the width of voltage and signal for write-in and the leakage of write-in electric charge, by increasing the number of traps at the Al2O3 layer and SiO2 layer, thru making the gate section of the memory transistor as the gate electrode, Si3N4 layer, Al2O3 layer, SiO2 layer and MNAOS configuration of the semiconductor base.
JP732076A 1976-01-26 1976-01-26 Semiconductor memory device Pending JPS5291383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP732076A JPS5291383A (en) 1976-01-26 1976-01-26 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP732076A JPS5291383A (en) 1976-01-26 1976-01-26 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5291383A true JPS5291383A (en) 1977-08-01

Family

ID=11662675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP732076A Pending JPS5291383A (en) 1976-01-26 1976-01-26 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5291383A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260197A (en) * 2004-03-11 2005-09-22 Hynix Semiconductor Inc Semiconductor element and its manufacturing method
US9321571B2 (en) 2013-06-19 2016-04-26 Sapiselco Srl Highly flexible cable clamp

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260197A (en) * 2004-03-11 2005-09-22 Hynix Semiconductor Inc Semiconductor element and its manufacturing method
US9321571B2 (en) 2013-06-19 2016-04-26 Sapiselco Srl Highly flexible cable clamp

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