JPS51138348A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51138348A
JPS51138348A JP6321475A JP6321475A JPS51138348A JP S51138348 A JPS51138348 A JP S51138348A JP 6321475 A JP6321475 A JP 6321475A JP 6321475 A JP6321475 A JP 6321475A JP S51138348 A JPS51138348 A JP S51138348A
Authority
JP
Japan
Prior art keywords
semiconductor device
provision
gate electrodes
delay line
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6321475A
Other languages
Japanese (ja)
Other versions
JPS5921186B2 (en
Inventor
Hiromitsu Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6321475A priority Critical patent/JPS5921186B2/en
Publication of JPS51138348A publication Critical patent/JPS51138348A/en
Publication of JPS5921186B2 publication Critical patent/JPS5921186B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Networks Using Active Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:CCD delay line of an improved linearity obtained by provision of three gate electrodes between input diodes and charge transfer electrode groups.
JP6321475A 1975-05-26 1975-05-26 semiconductor equipment Expired JPS5921186B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6321475A JPS5921186B2 (en) 1975-05-26 1975-05-26 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6321475A JPS5921186B2 (en) 1975-05-26 1975-05-26 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS51138348A true JPS51138348A (en) 1976-11-29
JPS5921186B2 JPS5921186B2 (en) 1984-05-18

Family

ID=13222713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6321475A Expired JPS5921186B2 (en) 1975-05-26 1975-05-26 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5921186B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2537322A1 (en) * 1982-12-07 1984-06-08 Philips Nv LOAD TRANSFER DEVICE

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3419999A1 (en) * 1984-05-29 1985-12-05 Karl 7298 Loßburg Hehl PIPE FITTING WITH TOUCH GASKET
JPS629087A (en) * 1985-07-08 1987-01-17 カルル・ヘール Contact sealed system screwed type pipe joint

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2537322A1 (en) * 1982-12-07 1984-06-08 Philips Nv LOAD TRANSFER DEVICE

Also Published As

Publication number Publication date
JPS5921186B2 (en) 1984-05-18

Similar Documents

Publication Publication Date Title
CA563722A (en) Semiconductor junction electrodes and method
JPS51114074A (en) Insulation gate type field effect transistor
JPS51138348A (en) Semiconductor device
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS5267556A (en) High voltage proof mis switching circuit
JPS5245280A (en) Field effect transistor of schottky barrier type
JPS51147972A (en) Insulated gate field effect semiconductor device
CA1028426A (en) Charge injection input network for semiconductor charge transfer device
JPS53105144A (en) Semiconductor signal converter
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS5255476A (en) Semiconductor device
JPS5234674A (en) Semiconductor device
JPS522157A (en) Mis output circuit
JPS5291383A (en) Semiconductor memory device
JPS53136975A (en) Charge transfer device
JPS5276886A (en) Semiconductor memory device
JPS5279892A (en) Charge coupled device
JPS5275189A (en) Charge transfer device
JPS5297682A (en) Charge transfer device
JPS5210662A (en) Semi-conductor circuit
JPS5274286A (en) Charge transfer device
JPS526036A (en) Semiconductor memory circuit
JPS525253A (en) Mis output circuit
JPS5279840A (en) Operation of nonvolatile semiconductor memory element