JPS5312267A - Growth method of semiconductor crystal - Google Patents

Growth method of semiconductor crystal

Info

Publication number
JPS5312267A
JPS5312267A JP8673676A JP8673676A JPS5312267A JP S5312267 A JPS5312267 A JP S5312267A JP 8673676 A JP8673676 A JP 8673676A JP 8673676 A JP8673676 A JP 8673676A JP S5312267 A JPS5312267 A JP S5312267A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
growth method
epitaxial growth
alignment
make
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8673676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5537092B2 (no
Inventor
Seiichi Nagata
Tsuneo Tanaka
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8673676A priority Critical patent/JPS5312267A/ja
Priority to US05/815,303 priority patent/US4171234A/en
Priority to GB29739/77A priority patent/GB1589455A/en
Priority to FR7722251A priority patent/FR2358921A1/fr
Priority to DE2732807A priority patent/DE2732807C2/de
Publication of JPS5312267A publication Critical patent/JPS5312267A/ja
Publication of JPS5537092B2 publication Critical patent/JPS5537092B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP8673676A 1976-07-20 1976-07-20 Growth method of semiconductor crystal Granted JPS5312267A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP8673676A JPS5312267A (en) 1976-07-20 1976-07-20 Growth method of semiconductor crystal
US05/815,303 US4171234A (en) 1976-07-20 1977-07-13 Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
GB29739/77A GB1589455A (en) 1976-07-20 1977-07-15 Crystals and the manufacture thereof
FR7722251A FR2358921A1 (fr) 1976-07-20 1977-07-20 Dispositif a monocristal et procede pour sa fabrication
DE2732807A DE2732807C2 (de) 1976-07-20 1977-07-20 Verfahren zur Herstellung eines Halbleiter-Bauelementes mit einer Einkristallstruktur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8673676A JPS5312267A (en) 1976-07-20 1976-07-20 Growth method of semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS5312267A true JPS5312267A (en) 1978-02-03
JPS5537092B2 JPS5537092B2 (no) 1980-09-25

Family

ID=13895095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8673676A Granted JPS5312267A (en) 1976-07-20 1976-07-20 Growth method of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5312267A (no)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62168608A (ja) * 1986-01-20 1987-07-24 Nippon Steel Corp 板圧延における形状制御方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62168608A (ja) * 1986-01-20 1987-07-24 Nippon Steel Corp 板圧延における形状制御方法

Also Published As

Publication number Publication date
JPS5537092B2 (no) 1980-09-25

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