JPS5312267A - Growth method of semiconductor crystal - Google Patents
Growth method of semiconductor crystalInfo
- Publication number
- JPS5312267A JPS5312267A JP8673676A JP8673676A JPS5312267A JP S5312267 A JPS5312267 A JP S5312267A JP 8673676 A JP8673676 A JP 8673676A JP 8673676 A JP8673676 A JP 8673676A JP S5312267 A JPS5312267 A JP S5312267A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor crystal
- growth method
- epitaxial growth
- alignment
- make
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8673676A JPS5312267A (en) | 1976-07-20 | 1976-07-20 | Growth method of semiconductor crystal |
US05/815,303 US4171234A (en) | 1976-07-20 | 1977-07-13 | Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles |
GB29739/77A GB1589455A (en) | 1976-07-20 | 1977-07-15 | Crystals and the manufacture thereof |
FR7722251A FR2358921A1 (fr) | 1976-07-20 | 1977-07-20 | Dispositif a monocristal et procede pour sa fabrication |
DE2732807A DE2732807C2 (de) | 1976-07-20 | 1977-07-20 | Verfahren zur Herstellung eines Halbleiter-Bauelementes mit einer Einkristallstruktur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8673676A JPS5312267A (en) | 1976-07-20 | 1976-07-20 | Growth method of semiconductor crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5312267A true JPS5312267A (en) | 1978-02-03 |
JPS5537092B2 JPS5537092B2 (no) | 1980-09-25 |
Family
ID=13895095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8673676A Granted JPS5312267A (en) | 1976-07-20 | 1976-07-20 | Growth method of semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5312267A (no) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62168608A (ja) * | 1986-01-20 | 1987-07-24 | Nippon Steel Corp | 板圧延における形状制御方法 |
-
1976
- 1976-07-20 JP JP8673676A patent/JPS5312267A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62168608A (ja) * | 1986-01-20 | 1987-07-24 | Nippon Steel Corp | 板圧延における形状制御方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5537092B2 (no) | 1980-09-25 |
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