JPS53113476A - Method for reduced pressure vapor growth - Google Patents
Method for reduced pressure vapor growthInfo
- Publication number
- JPS53113476A JPS53113476A JP2847377A JP2847377A JPS53113476A JP S53113476 A JPS53113476 A JP S53113476A JP 2847377 A JP2847377 A JP 2847377A JP 2847377 A JP2847377 A JP 2847377A JP S53113476 A JPS53113476 A JP S53113476A
- Authority
- JP
- Japan
- Prior art keywords
- reduced pressure
- pressure vapor
- vapor growth
- substrates
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To improve flow of gas by opening a hole in part of substrates, inserting a bar therein to support the substrates and performing reduced pressure vapor growth.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2847377A JPS53113476A (en) | 1977-03-14 | 1977-03-14 | Method for reduced pressure vapor growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2847377A JPS53113476A (en) | 1977-03-14 | 1977-03-14 | Method for reduced pressure vapor growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53113476A true JPS53113476A (en) | 1978-10-03 |
Family
ID=12249607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2847377A Pending JPS53113476A (en) | 1977-03-14 | 1977-03-14 | Method for reduced pressure vapor growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53113476A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60244030A (en) * | 1984-05-17 | 1985-12-03 | Fujitsu Ltd | Horizontal furnace |
-
1977
- 1977-03-14 JP JP2847377A patent/JPS53113476A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60244030A (en) * | 1984-05-17 | 1985-12-03 | Fujitsu Ltd | Horizontal furnace |
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