JPS60244030A - Horizontal furnace - Google Patents
Horizontal furnaceInfo
- Publication number
- JPS60244030A JPS60244030A JP9915784A JP9915784A JPS60244030A JP S60244030 A JPS60244030 A JP S60244030A JP 9915784 A JP9915784 A JP 9915784A JP 9915784 A JP9915784 A JP 9915784A JP S60244030 A JPS60244030 A JP S60244030A
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- furnace core
- wafer
- furnace
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
ｆａｌ 産業上の利用分野
本発明は、例えば半導体チップなどを製造するウェハの
加熱処理に使用する横型炉に関す。DETAILED DESCRIPTION OF THE INVENTION fal Industrial Field of Application The present invention relates to a horizontal furnace used for heat treatment of wafers for producing, for example, semiconductor chips.
この加熱処理には、例えば、熱酸化膜の形成、化学気相
成長（ＣＶＤ）による膜の形成、不純物の拡散などがあ
る。This heat treatment includes, for example, formation of a thermal oxide film, formation of a film by chemical vapor deposition (CVD), and diffusion of impurities.
これらの何れの場合も、量産に使用される横型炉には、
多数のウェハを一括して均一に処理出来ること、ウェハ
に異物を付着させぬことが要請され、然も一生産量の増
大に伴いウェハが大型化しても、この要請は変わること
がない。In any of these cases, the horizontal furnace used for mass production is
It is required to be able to uniformly process a large number of wafers at once and to prevent foreign matter from adhering to the wafers, and this requirement does not change even if the wafers become larger as production volume increases.
（ｂｌ 従来の技術
第２図は従来の横型炉の構成を模式的に示した側断面図
で、図示の横型炉は、一方が開口している管状の例えば
石英ガラスからなる炉芯管１、炉芯管１の開口を蓋する
例えば石英ガラスからなるキャンプ２、炉芯管内を加熱
するヒータ３などがらなっている。なお、ｌａ、 ｌｂ
はそれぞれ炉芯管ｌ内にガスを通す場合のガス導入口、
ガス導出口である。(bl) Prior Art Fig. 2 is a side sectional view schematically showing the configuration of a conventional horizontal furnace. It consists of a camp 2 made of, for example, quartz glass that covers the opening of the furnace core tube 1, and a heater 3 that heats the inside of the furnace core tube.
are the gas inlet when passing gas into the furnace core tube l, respectively,
This is a gas outlet.
この構成でなる横型炉においては、加熱処理する際のウ
ェハＡの炉芯管１に対する出し入れは、ウェハＡを入れ
た例えば石英ガラス製のバスケットからなるウェハ保持
具Ｂを、例えば石英ガラス捧からなる杆４で矢印ａ方向
に押したり引いたりして行い、ウェハ保持具Ｂの下面を
炉芯管１の内面に摺動させている。このため、該摺動の
際に摩耗粉が発生し、該摩耗粉がウェハＡに付着する欠
点がある。In the horizontal furnace having this configuration, the wafer holder B made of, for example, a quartz glass basket containing the wafer A is used to take the wafer A into and out of the furnace core tube 1 during heat treatment. The lower surface of the wafer holder B is slid on the inner surface of the furnace core tube 1 by pushing and pulling the rod 4 in the direction of the arrow a. Therefore, there is a drawback that abrasion powder is generated during the sliding and the abrasion powder adheres to the wafer A.
この欠点を排除するため、第３図（側断面図）図示のよ
うな改良型の横型炉が実用化されている。In order to eliminate this drawback, an improved horizontal furnace as shown in FIG. 3 (side sectional view) has been put into practical use.
即ち、第２図図示の杆４が横型炉の機構の一部をなした
片持梁型の梁１４に、またこれに伴い蓋２が蓋１２に替
わっている。That is, the rod 4 shown in FIG. 2 has been replaced with a cantilever beam 14 forming a part of the mechanism of the horizontal furnace, and the lid 2 has been replaced with a lid 12 accordingly.
梁１４はウェハ保持具Ｂを支持して矢印ａ方向に移動し
、ウェハＡの出し入れに際して、炉芯管１の内面にウェ
ハ保持具Ｂや梁１４が接触しないようになっている。The beam 14 supports the wafer holder B and moves in the direction of the arrow a, so that the wafer holder B and the beam 14 do not come into contact with the inner surface of the furnace core tube 1 when the wafer A is taken in or taken out.
この構成でなる横型炉においては、ウェハＡが小型の場
合には前記摩耗粉の問題は解消されているが、ウェハＡ
が大型になった場合、“ウェハＡ＋ウェハ保持具Ｂ”の
重量が大きくなるため梁１４先端の撓が大きく、即ち炉
芯管１内におけるウェハＡの上下方向の位置の差が大き
くなって、熱処理の均一性に欠けたり、ウェハ保持具Ｂ
が炉芯管１の内面に接触したりして、やはり問題が残る
。In a horizontal furnace with this configuration, the problem of abrasion powder is solved when the wafer A is small; however, when the wafer A
When the size of the wafer A increases, the weight of "wafer A + wafer holder B" increases, so the bending of the tip of the beam 14 increases, that is, the difference in the vertical position of the wafer A in the furnace core tube 1 increases. Lack of uniformity in heat treatment, wafer holder B
may come into contact with the inner surface of the furnace core tube 1, and a problem still remains.
（Ｃ） 発明が解決しようとする問題点本発明が解決し
ようとする問題点は、第２図図示の横型炉においてウェ
ハが大型になった場合、熱処理の際に炉芯管内における
ウェハの上下方向の位置の差が太き（なること、および
、ウエノ１の炉芯管に対する出し入れに際して、ウェハ
保持具が該炉芯管の内面に接触することである。(C) Problem to be solved by the invention The problem to be solved by the invention is that when the wafer becomes large in the horizontal furnace shown in FIG. There is a large difference in the position of the wafer holder, and when the wafer 1 is taken in and out of the furnace core tube, the wafer holder comes into contact with the inner surface of the furnace core tube.
（ｄ） 問題点を解決するための手段
上記問題点は、ウェハ保持具を支持して該保持具を横型
炉芯管に対して出し入れする梁が、該保持具の支持部を
挟んだ両側で支持されるように手段を講じた横型炉によ
って解決される。(d) Means for solving the problem The problem mentioned above is that the beams that support the wafer holder and move the holder in and out of the horizontal furnace core tube are located on both sides of the supporting part of the holder. The solution is a horizontal furnace which is provided with support.
（ｅ） 作用
ウェハ保持具を支持する従来の梁は片持梁であったが、
本発明による場合の梁は、該保持具の支持部を挟んだ両
側で支持されるため、該保持具の支持部の撓が従来に比
較して大幅に減少する。(e) Function The conventional beam supporting the wafer holder was a cantilever beam, but
Since the beam according to the present invention is supported on both sides of the support portion of the holder, the deflection of the support portion of the holder is significantly reduced compared to the conventional case.
従って、ウェハが大型になっても、炉芯管内におけるウ
ェハの上下方向の位置の差を大きくしないこと、および
、ウェハの炉芯管に対する出し入れに際して、ウェハ保
持具が該炉芯管の内面に接触しないようにすることが可
能になり、処理の均一性を確保し、且つ、前記摩耗粉の
問題を排除することが可能になる。Therefore, even if the wafer becomes large, the difference in the vertical position of the wafer in the furnace core tube will not become large, and the wafer holder will come into contact with the inner surface of the furnace core tube when the wafer is taken in and out of the furnace core tube. This makes it possible to ensure uniformity of processing and eliminate the problem of abrasion powder.
（ｆｌ 実施例 以下本発明の一実施例を第１図により説明する。(fl Example An embodiment of the present invention will be described below with reference to FIG.
企図を通じ同一符号は同一対象物を示す。The same reference numerals refer to the same objects throughout the design.
第１図図示の横型炉は、第３図図示の横型炉の梁１４を
図上右側に延ばして梁２４となし、梁２４を支持する支
持点５を設けて、梁２４における“ウェハＡ＋ウェハ保
持具Ｂ”の荷重を支える部分を挟んだ両側で梁２４を支
持するようにしている。この変更に伴い、第３図図示の
炉芯管１は炉芯管２１とキャップ２２とに分割されてい
るが、炉芯管としての機能は同等である。In the horizontal furnace shown in FIG. 1, the beam 14 of the horizontal furnace shown in FIG. The beam 24 is supported on both sides of the load-bearing portion of the holder B''. Due to this change, the furnace core tube 1 shown in FIG. 3 is divided into a furnace core tube 21 and a cap 22, but the functions as the furnace core tubes are the same.
この構成でなる横型炉においては、第３図図示の場合と
比較して、梁２４の断面形状を梁１４と同等にし、“ウ
ェハＡ＋ウェハ保持具Ｂ”の荷重を同等にした際、梁１
４に対する梁２４の最大撓は、加熱処理状態（図示の状
態）で１１５以下、梁２４を矢印ａの左方向に炉芯管２
１の長さ程度移動してウェハＡを引き出した状態でも約
１／２である。In the horizontal furnace having this configuration, compared to the case shown in FIG.
The maximum deflection of the beam 24 with respect to 4 is 115 or less in the heat treatment state (the state shown in the figure), and the beam 24 is moved to the left of the arrow a toward the furnace core tube 2.
Even when the wafer A is pulled out by moving about 1 length, the distance is about 1/2.
本願の発明者は、炉芯管１．２１の長さが約１ｍの横型
炉において、６！ンウ工ハＡ２５枚を入れたウェハ保持
具Ｂ六個を荷重にし、上記撓の相違を確認した。更に、
９００℃の加熱状態に１０回の出し入れを繰り返して該
撓に異常のないことも確認した。The inventor of the present application has developed a horizontal furnace in which the length of the furnace core tube 1.21 is approximately 1 m. Six wafer holders B containing 25 wafer holders A were used as a load to confirm the difference in deflection. Furthermore,
It was also confirmed that there was no abnormality in the deflection by repeating putting in and out of the heated state at 900° C. 10 times.
（ｇｌ 発明の効果
以上に説明したように、本発明による手段を講すること
により、ウェハが大型になっても、処理の均一性を確保
し、且つ、前記摩耗粉の問題を排除することを可能にさ
せる効果がある。(gl Effects of the Invention As explained above, by taking the measures according to the present invention, even if the wafer becomes large, uniformity of processing can be ensured, and the problem of the above-mentioned abrasion powder can be eliminated. It has the effect of making it possible.
第１図は本発明による横型炉の一実施例の構成を模式的
に示した側断面図、
第２図は従来の横型炉の構成を模式的に示した側断面図
、
第３図は従来の改良型横型炉の構成を模式的に示した側
断面図である。
図面において、
１．２１は炉芯管、 １ａはガス導入口、１ｂはガス導
出口、 ２．１２．２２はキャップ、３はヒータ、 ４
は杆、
１４．２４は梁、 ５は支持点、
Ａはウェハ、 Ｂはウェハ保持具、
をそれぞれ示す。
茅１ 図
第２ 図
揶３ 図FIG. 1 is a side sectional view schematically showing the configuration of an embodiment of a horizontal furnace according to the present invention, FIG. 2 is a side sectional view schematically showing the configuration of a conventional horizontal furnace, and FIG. 3 is a conventional horizontal furnace. FIG. 2 is a side sectional view schematically showing the configuration of an improved horizontal furnace. In the drawing, 1.21 is the furnace core tube, 1a is the gas inlet, 1b is the gas outlet, 2.12.22 is the cap, 3 is the heater, 4
14.24 is a beam, 5 is a support point, A is a wafer, and B is a wafer holder. Kaya 1 Figure 2 Figure 3
Claims (1)
出し入れする梁が、該保持具の支持部を挾んだ両側で支
持されていることを特徴とする横型炉。A horizontal furnace characterized in that beams that support a wafer holder and move the holder in and out of a horizontal furnace core tube are supported on both sides of the support part of the holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9915784A JPS60244030A (en) | 1984-05-17 | 1984-05-17 | Horizontal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9915784A JPS60244030A (en) | 1984-05-17 | 1984-05-17 | Horizontal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60244030A true JPS60244030A (en) | 1985-12-03 |
Family
ID=14239838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9915784A Pending JPS60244030A (en) | 1984-05-17 | 1984-05-17 | Horizontal furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60244030A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4944511U (en) * | 1972-07-20 | 1974-04-19 | ||
| JPS53113476A (en) * | 1977-03-14 | 1978-10-03 | Nec Corp | Method for reduced pressure vapor growth |
-
1984
- 1984-05-17 JP JP9915784A patent/JPS60244030A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4944511U (en) * | 1972-07-20 | 1974-04-19 | ||
| JPS53113476A (en) * | 1977-03-14 | 1978-10-03 | Nec Corp | Method for reduced pressure vapor growth |
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