JPS5278380A - Production of mos field effect semiconductor device - Google Patents

Production of mos field effect semiconductor device

Info

Publication number
JPS5278380A
JPS5278380A JP15525875A JP15525875A JPS5278380A JP S5278380 A JPS5278380 A JP S5278380A JP 15525875 A JP15525875 A JP 15525875A JP 15525875 A JP15525875 A JP 15525875A JP S5278380 A JPS5278380 A JP S5278380A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
field effect
mos field
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15525875A
Other languages
Japanese (ja)
Other versions
JPS5931228B2 (en
Inventor
Hideto Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15525875A priority Critical patent/JPS5931228B2/en
Publication of JPS5278380A publication Critical patent/JPS5278380A/en
Publication of JPS5931228B2 publication Critical patent/JPS5931228B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: A process for production of a silicon gate type MOSFET whereby the vena contracta of a silicon dioxide produced under polycrystalline silicon lateral edges, the dielectric strength between the gate and the source and drain is improved and the disconnection of a metal wiring layer crossing the polycrystalline silicon may be prevented.
COPYRIGHT: (C)1977,JPO&Japio
JP15525875A 1975-12-25 1975-12-25 MOS Expired JPS5931228B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15525875A JPS5931228B2 (en) 1975-12-25 1975-12-25 MOS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15525875A JPS5931228B2 (en) 1975-12-25 1975-12-25 MOS

Publications (2)

Publication Number Publication Date
JPS5278380A true JPS5278380A (en) 1977-07-01
JPS5931228B2 JPS5931228B2 (en) 1984-07-31

Family

ID=15601972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15525875A Expired JPS5931228B2 (en) 1975-12-25 1975-12-25 MOS

Country Status (1)

Country Link
JP (1) JPS5931228B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141582A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Process of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141582A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Process of semiconductor device
JPS5946108B2 (en) * 1976-05-20 1984-11-10 松下電器産業株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS5931228B2 (en) 1984-07-31

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