JPS5278380A - Production of mos field effect semiconductor device - Google Patents
Production of mos field effect semiconductor deviceInfo
- Publication number
- JPS5278380A JPS5278380A JP15525875A JP15525875A JPS5278380A JP S5278380 A JPS5278380 A JP S5278380A JP 15525875 A JP15525875 A JP 15525875A JP 15525875 A JP15525875 A JP 15525875A JP S5278380 A JPS5278380 A JP S5278380A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- field effect
- mos field
- effect semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: A process for production of a silicon gate type MOSFET whereby the vena contracta of a silicon dioxide produced under polycrystalline silicon lateral edges, the dielectric strength between the gate and the source and drain is improved and the disconnection of a metal wiring layer crossing the polycrystalline silicon may be prevented.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15525875A JPS5931228B2 (en) | 1975-12-25 | 1975-12-25 | MOS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15525875A JPS5931228B2 (en) | 1975-12-25 | 1975-12-25 | MOS |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5278380A true JPS5278380A (en) | 1977-07-01 |
JPS5931228B2 JPS5931228B2 (en) | 1984-07-31 |
Family
ID=15601972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15525875A Expired JPS5931228B2 (en) | 1975-12-25 | 1975-12-25 | MOS |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931228B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52141582A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Process of semiconductor device |
-
1975
- 1975-12-25 JP JP15525875A patent/JPS5931228B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52141582A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Process of semiconductor device |
JPS5946108B2 (en) * | 1976-05-20 | 1984-11-10 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5931228B2 (en) | 1984-07-31 |
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