JPS5258376A - Etching for flattening of semiconductor surface - Google Patents
Etching for flattening of semiconductor surfaceInfo
- Publication number
- JPS5258376A JPS5258376A JP13403675A JP13403675A JPS5258376A JP S5258376 A JPS5258376 A JP S5258376A JP 13403675 A JP13403675 A JP 13403675A JP 13403675 A JP13403675 A JP 13403675A JP S5258376 A JPS5258376 A JP S5258376A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- flattening
- semiconductor surface
- serration
- flatten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To flatten the surface of a semiconductor layer of a high impurity concentration by forming a mask covering the recess provided therein and its circumferential parts and using etching serration.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13403675A JPS5258376A (en) | 1975-11-10 | 1975-11-10 | Etching for flattening of semiconductor surface |
DE19762651125 DE2651125A1 (en) | 1975-11-10 | 1976-11-09 | Flat etching silicon semiconductor layer contg. depression - where depression is provided with differential etching mask (NL 12.5.77) |
NL7612499A NL7612499A (en) | 1975-11-10 | 1976-11-10 | PROCEDURE FOR FLAT ETCHING THE SURFACE OF A SEMICONDUCTOR. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13403675A JPS5258376A (en) | 1975-11-10 | 1975-11-10 | Etching for flattening of semiconductor surface |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5258376A true JPS5258376A (en) | 1977-05-13 |
Family
ID=15118859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13403675A Pending JPS5258376A (en) | 1975-11-10 | 1975-11-10 | Etching for flattening of semiconductor surface |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5258376A (en) |
DE (1) | DE2651125A1 (en) |
NL (1) | NL7612499A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0286855A1 (en) * | 1987-04-15 | 1988-10-19 | BBC Brown Boveri AG | Process for etching moats in a silicon substrate |
-
1975
- 1975-11-10 JP JP13403675A patent/JPS5258376A/en active Pending
-
1976
- 1976-11-09 DE DE19762651125 patent/DE2651125A1/en not_active Ceased
- 1976-11-10 NL NL7612499A patent/NL7612499A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7612499A (en) | 1977-05-12 |
DE2651125A1 (en) | 1977-05-18 |
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