JPS51113578A - Semi-conductor elements - Google Patents
Semi-conductor elementsInfo
- Publication number
- JPS51113578A JPS51113578A JP3798375A JP3798375A JPS51113578A JP S51113578 A JPS51113578 A JP S51113578A JP 3798375 A JP3798375 A JP 3798375A JP 3798375 A JP3798375 A JP 3798375A JP S51113578 A JPS51113578 A JP S51113578A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- conductor elements
- elimination
- minimize
- enabling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To minimize the mask process by enabling an elimination of the thick P-type impurities diffusion prior to forming an epitaxial layer.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3798375A JPS51113578A (en) | 1975-03-31 | 1975-03-31 | Semi-conductor elements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3798375A JPS51113578A (en) | 1975-03-31 | 1975-03-31 | Semi-conductor elements |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51113578A true JPS51113578A (en) | 1976-10-06 |
Family
ID=12512790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3798375A Pending JPS51113578A (en) | 1975-03-31 | 1975-03-31 | Semi-conductor elements |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51113578A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4937585A (en) * | 1972-08-09 | 1974-04-08 | ||
JPS51113475A (en) * | 1975-03-11 | 1976-10-06 | Siemens Ag | Integrated semiconductor circuit and method of producing same |
-
1975
- 1975-03-31 JP JP3798375A patent/JPS51113578A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4937585A (en) * | 1972-08-09 | 1974-04-08 | ||
JPS51113475A (en) * | 1975-03-11 | 1976-10-06 | Siemens Ag | Integrated semiconductor circuit and method of producing same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5211525A (en) | Method of manufacturing headrests | |
JPS51113578A (en) | Semi-conductor elements | |
JPS524175A (en) | Groups iii-v compounds semiconductor device | |
JPS5228888A (en) | Emission semiconductor device | |
JPS5258472A (en) | Selective oxidation | |
JPS525700A (en) | The process for production of silicon nitride | |
JPS5217768A (en) | Production method of semi-conductor device | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS5244175A (en) | Method of flat etching of silicon substrate | |
JPS51118369A (en) | Manufacturing process for simiconduator unit | |
JPS5228885A (en) | Method for production of semiconductive emitter device | |
JPS5314585A (en) | Semiconductor device | |
JPS5373990A (en) | Semiconductor device | |
JPS5275977A (en) | Production of compound semiconductor device | |
JPS5258376A (en) | Etching for flattening of semiconductor surface | |
JPS5273673A (en) | Production of semiconductor device | |
JPS5311574A (en) | Production of semiconductor device | |
JPS5230171A (en) | Method for fabrication of semiconductor device | |
JPS5247685A (en) | Process for production of mos type semiconductor device | |
JPS5250165A (en) | Semiconductor diffusion method | |
JPS51112266A (en) | Semiconductor device production method | |
JPS535583A (en) | Manufacture of thyristor | |
JPS5422157A (en) | Formation method of selective impurity diffusion region into iii-v group compound semiconductor | |
JPS5231690A (en) | Productin method of semiconductor device | |
JPS5245884A (en) | Process for production of semiconductor device |