JPS57181170A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS57181170A JPS57181170A JP5714282A JP5714282A JPS57181170A JP S57181170 A JPS57181170 A JP S57181170A JP 5714282 A JP5714282 A JP 5714282A JP 5714282 A JP5714282 A JP 5714282A JP S57181170 A JPS57181170 A JP S57181170A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- gate electrode
- gate
- width part
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To eliminate the influence by the resistance component of electrodes, by providing a gate electrode on the small width part of the opening on an active layer a gate electrode take-out on the large width part with S, D electrodes placing the gate electrode therebetween in a Schottky barrier FET. CONSTITUTION:An N type active layer 2 is formed on a high specific resistance GaAs substrate 1 with the opening having large and small width parts provided thereon. The gate electrodes 5', 6' of two electrodes 50, 60 contact the active layer across the small width part with electrode take-out parts 5'', 6'' provided on the large width part. A source electrode 3 and drain electrode 4 opposite to each other across the gate electrode are provided. Thus, the gate voltage impressed on the gate electrode take-out part is impressed on the centers of the gate electrodes 5', 6' later to be transmitted to the both ends so that the voltage drop is equal and small for negligence of the influence by the resistance component of electrodes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5714282A JPS57181170A (en) | 1982-04-05 | 1982-04-05 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5714282A JPS57181170A (en) | 1982-04-05 | 1982-04-05 | Field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57181170A true JPS57181170A (en) | 1982-11-08 |
JPS643074B2 JPS643074B2 (en) | 1989-01-19 |
Family
ID=13047318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5714282A Granted JPS57181170A (en) | 1982-04-05 | 1982-04-05 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57181170A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE34244E (en) * | 1982-10-15 | 1993-05-11 | Sigma Enterprises, Inc. | Multiline slot machine |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5322666U (en) * | 1976-08-05 | 1978-02-25 |
-
1982
- 1982-04-05 JP JP5714282A patent/JPS57181170A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5322666U (en) * | 1976-08-05 | 1978-02-25 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE34244E (en) * | 1982-10-15 | 1993-05-11 | Sigma Enterprises, Inc. | Multiline slot machine |
Also Published As
Publication number | Publication date |
---|---|
JPS643074B2 (en) | 1989-01-19 |
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