JPS5232234B2 - - Google Patents
Info
- Publication number
- JPS5232234B2 JPS5232234B2 JP46080047A JP8004771A JPS5232234B2 JP S5232234 B2 JPS5232234 B2 JP S5232234B2 JP 46080047 A JP46080047 A JP 46080047A JP 8004771 A JP8004771 A JP 8004771A JP S5232234 B2 JPS5232234 B2 JP S5232234B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP46080047A JPS5232234B2 (xx) | 1971-10-11 | 1971-10-11 | |
GB4564772A GB1413161A (en) | 1971-10-11 | 1972-10-04 | Process for manufacturing semiconductor devices |
US00295795A US3849270A (en) | 1971-10-11 | 1972-10-10 | Process of manufacturing semiconductor devices |
DE2249832A DE2249832C3 (de) | 1971-10-11 | 1972-10-11 | Verfahren zum Herstellen einer Verdrahtungsschicht und Anwendung des Verfahrens zum Herstellen von Mehrschichtenverdrahtungen |
DE2265257A DE2265257C2 (de) | 1971-10-11 | 1972-10-11 | Verfahren zur Herstellung einer integrierten Halbleiterschaltung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP46080047A JPS5232234B2 (xx) | 1971-10-11 | 1971-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4845185A JPS4845185A (xx) | 1973-06-28 |
JPS5232234B2 true JPS5232234B2 (xx) | 1977-08-19 |
Family
ID=13707313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP46080047A Expired JPS5232234B2 (xx) | 1971-10-11 | 1971-10-11 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3849270A (xx) |
JP (1) | JPS5232234B2 (xx) |
DE (2) | DE2249832C3 (xx) |
GB (1) | GB1413161A (xx) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583380B2 (ja) * | 1977-03-04 | 1983-01-21 | 株式会社日立製作所 | 半導体装置とその製造方法 |
JPS5893261A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体装置の製造方法 |
WO1990000476A1 (en) * | 1988-07-12 | 1990-01-25 | The Regents Of The University Of California | Planarized interconnect etchback |
US5256565A (en) * | 1989-05-08 | 1993-10-26 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical planarization |
US5096550A (en) * | 1990-10-15 | 1992-03-17 | The United States Of America As Represented By The United States Department Of Energy | Method and apparatus for spatially uniform electropolishing and electrolytic etching |
US7531079B1 (en) | 1998-10-26 | 2009-05-12 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation |
US6709565B2 (en) | 1998-10-26 | 2004-03-23 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation |
US7449098B1 (en) | 1999-10-05 | 2008-11-11 | Novellus Systems, Inc. | Method for planar electroplating |
US6315883B1 (en) | 1998-10-26 | 2001-11-13 | Novellus Systems, Inc. | Electroplanarization of large and small damascene features using diffusion barriers and electropolishing |
US6495442B1 (en) * | 2000-10-18 | 2002-12-17 | Magic Corporation | Post passivation interconnection schemes on top of the IC chips |
US6653226B1 (en) | 2001-01-09 | 2003-11-25 | Novellus Systems, Inc. | Method for electrochemical planarization of metal surfaces |
US6848975B2 (en) * | 2002-04-09 | 2005-02-01 | Rensselaer Polytechnic Institute | Electrochemical planarization of metal feature surfaces |
US7799200B1 (en) | 2002-07-29 | 2010-09-21 | Novellus Systems, Inc. | Selective electrochemical accelerator removal |
US8158532B2 (en) | 2003-10-20 | 2012-04-17 | Novellus Systems, Inc. | Topography reduction and control by selective accelerator removal |
US8530359B2 (en) | 2003-10-20 | 2013-09-10 | Novellus Systems, Inc. | Modulated metal removal using localized wet etching |
US8168540B1 (en) | 2009-12-29 | 2012-05-01 | Novellus Systems, Inc. | Methods and apparatus for depositing copper on tungsten |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3169892A (en) * | 1959-04-08 | 1965-02-16 | Jerome H Lemelson | Method of making a multi-layer electrical circuit |
GB1048424A (en) * | 1963-08-28 | 1966-11-16 | Int Standard Electric Corp | Improvements in or relating to semiconductor devices |
US3372063A (en) * | 1964-12-22 | 1968-03-05 | Hitachi Ltd | Method for manufacturing at least one electrically isolated region of a semiconductive material |
US3409523A (en) * | 1966-03-10 | 1968-11-05 | Bell Telephone Labor Inc | Electroetching an aluminum plated semiconductor in a tetraalkylammonium hydroxide electrolyte |
FR96113E (fr) * | 1967-12-06 | 1972-05-19 | Ibm | Dispositif semi-conducteur. |
NL7101307A (xx) | 1970-02-03 | 1971-08-05 |
-
1971
- 1971-10-11 JP JP46080047A patent/JPS5232234B2/ja not_active Expired
-
1972
- 1972-10-04 GB GB4564772A patent/GB1413161A/en not_active Expired
- 1972-10-10 US US00295795A patent/US3849270A/en not_active Expired - Lifetime
- 1972-10-11 DE DE2249832A patent/DE2249832C3/de not_active Expired
- 1972-10-11 DE DE2265257A patent/DE2265257C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2249832C3 (de) | 1982-02-18 |
DE2249832A1 (de) | 1973-04-19 |
DE2265257C2 (de) | 1983-10-27 |
JPS4845185A (xx) | 1973-06-28 |
DE2265257A1 (de) | 1977-02-10 |
DE2249832B2 (de) | 1977-06-02 |
US3849270A (en) | 1974-11-19 |
GB1413161A (en) | 1975-11-05 |