JPS52141173A - Electrode formation method for semiconductor devices - Google Patents
Electrode formation method for semiconductor devicesInfo
- Publication number
- JPS52141173A JPS52141173A JP5809776A JP5809776A JPS52141173A JP S52141173 A JPS52141173 A JP S52141173A JP 5809776 A JP5809776 A JP 5809776A JP 5809776 A JP5809776 A JP 5809776A JP S52141173 A JPS52141173 A JP S52141173A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor devices
- formation method
- electrode formation
- film
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5809776A JPS52141173A (en) | 1976-05-19 | 1976-05-19 | Electrode formation method for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5809776A JPS52141173A (en) | 1976-05-19 | 1976-05-19 | Electrode formation method for semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52141173A true JPS52141173A (en) | 1977-11-25 |
Family
ID=13074442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5809776A Pending JPS52141173A (en) | 1976-05-19 | 1976-05-19 | Electrode formation method for semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52141173A (en) |
-
1976
- 1976-05-19 JP JP5809776A patent/JPS52141173A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52141173A (en) | Electrode formation method for semiconductor devices | |
JPS5248468A (en) | Process for production of semiconductor device | |
JPS51118381A (en) | Manufacturing process for semiconductor unit | |
JPS5258463A (en) | Production of semiconductor device | |
JPS5370769A (en) | Production of semiconductor device | |
JPS53140967A (en) | Production of electrodes of semiconductor device | |
JPS5219297A (en) | Method of manufacturing a metal film resistor | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS52129279A (en) | Production of semiconductor device | |
JPS5491092A (en) | Piezoelectric vibrator | |
JPS5335390A (en) | Production of semiconductor device | |
JPS543470A (en) | Etching method | |
JPS52141592A (en) | Process of semiconductor device | |
JPS6484224A (en) | Electrode forming method | |
JPS52155055A (en) | Production of semiconductor device | |
JPS53145485A (en) | Production of semiconductor device having serrations on semiconductor surface | |
JPS53123089A (en) | Production of semiconductor device | |
JPS52155972A (en) | Production of semiconductor device | |
JPS53118993A (en) | Manufacture for semiconductor device | |
JPS5395586A (en) | Manufacture for semiconductor element | |
JPS5287978A (en) | Bump electrode forming method in semiconductor device | |
JPS52155054A (en) | Production of semiconductor device | |
JPS5355143A (en) | Electrode forming method in full surface mirror type liquid crystal displaydevice | |
JPS56101756A (en) | Manufacture of semiconductor device | |
JPS53104165A (en) | Electrode formation method of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060509 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060424 |
|
A521 | Written amendment |
Effective date: 20060809 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070612 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070614 |
|
R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100622 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |