JPS6484224A - Electrode forming method - Google Patents

Electrode forming method

Info

Publication number
JPS6484224A
JPS6484224A JP24316587A JP24316587A JPS6484224A JP S6484224 A JPS6484224 A JP S6484224A JP 24316587 A JP24316587 A JP 24316587A JP 24316587 A JP24316587 A JP 24316587A JP S6484224 A JPS6484224 A JP S6484224A
Authority
JP
Japan
Prior art keywords
film
metallic
substrate
substrate film
metallic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24316587A
Other languages
Japanese (ja)
Inventor
Hiroyuki Okimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP24316587A priority Critical patent/JPS6484224A/en
Publication of JPS6484224A publication Critical patent/JPS6484224A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

PURPOSE:To form an electrode consisting of a metallic substrate film and a metallic film in a pattern with high accuracy by patterning the metallic substrate film to the formation pattern of the metallic film on a transparent substrate plane, and plating the metallic film on the surface of the substrate film. CONSTITUTION:The metallic substrate film 17 is patterned to the formation pattern of the metallic film 16 on the planes of the transparent substrates 11 and 12, and after that, the metallic film 16 is plated on the surface of a patterned substrate film 17. In other words, since the substrate film 17 is patterned to the formation pattern of the metallic film 16 before plating the metallic film 16, it is possible to prevent the over-etching of the substrate film from being generated as in a case where the etching of the metallic film 16 and the substrate film 17 are performed sequentially after plating the metallic film 16 on the substrate film 17. Therefore, it is possible to perform the patterning of the substrate film 17 with high accuracy, and also, to form the metallic film in the same shape pattern with high accuracy as that of the substrate film by plating the metallic film 16 on the surface of the patterned substrate film 17. In such a way, it is possible to form the electrode consisting of the substrate film 17 and the metallic film 16 to be formed on a prescribed pat on a transparent conductive film in the pattern with high accuracy.
JP24316587A 1987-09-28 1987-09-28 Electrode forming method Pending JPS6484224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24316587A JPS6484224A (en) 1987-09-28 1987-09-28 Electrode forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24316587A JPS6484224A (en) 1987-09-28 1987-09-28 Electrode forming method

Publications (1)

Publication Number Publication Date
JPS6484224A true JPS6484224A (en) 1989-03-29

Family

ID=17099775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24316587A Pending JPS6484224A (en) 1987-09-28 1987-09-28 Electrode forming method

Country Status (1)

Country Link
JP (1) JPS6484224A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168074A (en) * 1989-09-20 1992-12-01 Honeywell Inc. Active matrix liquid crystal display fabrication for grayscale
US7760317B2 (en) 2003-10-14 2010-07-20 Lg Display Co., Ltd. Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143315A (en) * 1983-12-29 1985-07-29 Hitachi Ltd Liquid-crystal optical switch array
JPS60200968A (en) * 1984-03-27 1985-10-11 Toshiba Corp Electroless plating method
JPS60245782A (en) * 1984-05-21 1985-12-05 Mitsubishi Electric Corp Plating method onto transparent conductive film pattern

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143315A (en) * 1983-12-29 1985-07-29 Hitachi Ltd Liquid-crystal optical switch array
JPS60200968A (en) * 1984-03-27 1985-10-11 Toshiba Corp Electroless plating method
JPS60245782A (en) * 1984-05-21 1985-12-05 Mitsubishi Electric Corp Plating method onto transparent conductive film pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168074A (en) * 1989-09-20 1992-12-01 Honeywell Inc. Active matrix liquid crystal display fabrication for grayscale
US7760317B2 (en) 2003-10-14 2010-07-20 Lg Display Co., Ltd. Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display

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