JPS52108777A - Field-effect transistor for schottky barrier layer - Google Patents
Field-effect transistor for schottky barrier layerInfo
- Publication number
- JPS52108777A JPS52108777A JP2520676A JP2520676A JPS52108777A JP S52108777 A JPS52108777 A JP S52108777A JP 2520676 A JP2520676 A JP 2520676A JP 2520676 A JP2520676 A JP 2520676A JP S52108777 A JPS52108777 A JP S52108777A
- Authority
- JP
- Japan
- Prior art keywords
- field
- barrier layer
- effect transistor
- schottky barrier
- oxidating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase the electric stability of MESFET, by oxidating the semiconductor conductive layer between the source and the gate, and further by coating a high ratio resistance layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2520676A JPS52108777A (en) | 1976-03-09 | 1976-03-09 | Field-effect transistor for schottky barrier layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2520676A JPS52108777A (en) | 1976-03-09 | 1976-03-09 | Field-effect transistor for schottky barrier layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52108777A true JPS52108777A (en) | 1977-09-12 |
Family
ID=12159468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2520676A Pending JPS52108777A (en) | 1976-03-09 | 1976-03-09 | Field-effect transistor for schottky barrier layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52108777A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643767A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
JPS57196582A (en) * | 1981-05-27 | 1982-12-02 | Matsushita Electric Ind Co Ltd | Field-effect transistor |
JPS60145675A (en) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | Gaas fet |
JPH06291147A (en) * | 1991-10-22 | 1994-10-18 | American Teleph & Telegr Co <Att> | Integrated circuit or discrete device and manufacture thereof |
-
1976
- 1976-03-09 JP JP2520676A patent/JPS52108777A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643767A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
JPS57196582A (en) * | 1981-05-27 | 1982-12-02 | Matsushita Electric Ind Co Ltd | Field-effect transistor |
JPS60145675A (en) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | Gaas fet |
JPH06291147A (en) * | 1991-10-22 | 1994-10-18 | American Teleph & Telegr Co <Att> | Integrated circuit or discrete device and manufacture thereof |
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