JPS52108777A - Field-effect transistor for schottky barrier layer - Google Patents

Field-effect transistor for schottky barrier layer

Info

Publication number
JPS52108777A
JPS52108777A JP2520676A JP2520676A JPS52108777A JP S52108777 A JPS52108777 A JP S52108777A JP 2520676 A JP2520676 A JP 2520676A JP 2520676 A JP2520676 A JP 2520676A JP S52108777 A JPS52108777 A JP S52108777A
Authority
JP
Japan
Prior art keywords
field
barrier layer
effect transistor
schottky barrier
oxidating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2520676A
Other languages
Japanese (ja)
Inventor
Keiichi Ohata
Nobuo Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2520676A priority Critical patent/JPS52108777A/en
Publication of JPS52108777A publication Critical patent/JPS52108777A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase the electric stability of MESFET, by oxidating the semiconductor conductive layer between the source and the gate, and further by coating a high ratio resistance layer.
COPYRIGHT: (C)1977,JPO&Japio
JP2520676A 1976-03-09 1976-03-09 Field-effect transistor for schottky barrier layer Pending JPS52108777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2520676A JPS52108777A (en) 1976-03-09 1976-03-09 Field-effect transistor for schottky barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2520676A JPS52108777A (en) 1976-03-09 1976-03-09 Field-effect transistor for schottky barrier layer

Publications (1)

Publication Number Publication Date
JPS52108777A true JPS52108777A (en) 1977-09-12

Family

ID=12159468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2520676A Pending JPS52108777A (en) 1976-03-09 1976-03-09 Field-effect transistor for schottky barrier layer

Country Status (1)

Country Link
JP (1) JPS52108777A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643767A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS57196582A (en) * 1981-05-27 1982-12-02 Matsushita Electric Ind Co Ltd Field-effect transistor
JPS60145675A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Gaas fet
JPH06291147A (en) * 1991-10-22 1994-10-18 American Teleph & Telegr Co <Att> Integrated circuit or discrete device and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643767A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS57196582A (en) * 1981-05-27 1982-12-02 Matsushita Electric Ind Co Ltd Field-effect transistor
JPS60145675A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Gaas fet
JPH06291147A (en) * 1991-10-22 1994-10-18 American Teleph & Telegr Co <Att> Integrated circuit or discrete device and manufacture thereof

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