JPS5185381A - - Google Patents
Info
- Publication number
- JPS5185381A JPS5185381A JP50009713A JP971375A JPS5185381A JP S5185381 A JPS5185381 A JP S5185381A JP 50009713 A JP50009713 A JP 50009713A JP 971375 A JP971375 A JP 971375A JP S5185381 A JPS5185381 A JP S5185381A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50009713A JPS5185381A (de) | 1975-01-24 | 1975-01-24 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50009713A JPS5185381A (de) | 1975-01-24 | 1975-01-24 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54162677A Division JPS6041876B2 (ja) | 1979-12-17 | 1979-12-17 | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5185381A true JPS5185381A (de) | 1976-07-26 |
Family
ID=11727885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50009713A Pending JPS5185381A (de) | 1975-01-24 | 1975-01-24 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5185381A (de) |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
JPS57141964A (en) * | 1981-02-26 | 1982-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
JPS5914676A (ja) * | 1982-07-16 | 1984-01-25 | Nec Corp | 縦型電界効果トランジスタの製造方法 |
JPS62122175A (ja) * | 1986-08-22 | 1987-06-03 | Nec Corp | 半導体装置 |
US4686551A (en) * | 1982-11-27 | 1987-08-11 | Nissan Motor Co., Ltd. | MOS transistor |
US4705759A (en) * | 1978-10-13 | 1987-11-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
JPS6387771A (ja) * | 1987-07-17 | 1988-04-19 | Nec Corp | 電界効果トランジスタ |
JPS6387769A (ja) * | 1987-07-17 | 1988-04-19 | Nec Corp | 電界効果トランジスタ |
US4803532A (en) * | 1982-11-27 | 1989-02-07 | Nissan Motor Co., Ltd. | Vertical MOSFET having a proof structure against puncture due to breakdown |
US4942444A (en) * | 1978-08-10 | 1990-07-17 | Siemens Aktiengesellschaft | Thyristor |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
US5008725A (en) * | 1979-05-14 | 1991-04-16 | International Rectifier Corporation | Plural polygon source pattern for MOSFET |
US5130767A (en) * | 1979-05-14 | 1992-07-14 | International Rectifier Corporation | Plural polygon source pattern for mosfet |
US5243211A (en) * | 1991-11-25 | 1993-09-07 | Harris Corporation | Power fet with shielded channels |
US5323036A (en) * | 1992-01-21 | 1994-06-21 | Harris Corporation | Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
US5663080A (en) * | 1991-11-29 | 1997-09-02 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5670392A (en) * | 1994-07-04 | 1997-09-23 | Sgs-Thomson Microelectronics S.R.L. | Process for manufacturing high-density MOS-technology power devices |
US5701023A (en) * | 1994-08-03 | 1997-12-23 | National Semiconductor Corporation | Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US5841167A (en) * | 1995-12-28 | 1998-11-24 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US5933733A (en) * | 1994-06-23 | 1999-08-03 | Sgs-Thomson Microelectronics, S.R.L. | Zero thermal budget manufacturing process for MOS-technology power devices |
US5981998A (en) * | 1995-10-30 | 1999-11-09 | Sgs-Thomson Microelectronics S.R.L. | Single feature size MOS technology power device |
US6030870A (en) * | 1995-10-30 | 2000-02-29 | Sgs-Thomson Microelectronics, S.R.L. | High density MOS technology power device |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US6492691B2 (en) | 1998-05-26 | 2002-12-10 | Stmicroelectronics S.R.L. | High integration density MOS technology power device structure |
US6507070B1 (en) * | 1996-11-25 | 2003-01-14 | Semiconductor Components Industries Llc | Semiconductor device and method of making |
JP2003046082A (ja) * | 2001-05-25 | 2003-02-14 | Toshiba Corp | 半導体装置及びその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4831514A (de) * | 1971-08-26 | 1973-04-25 | ||
JPS4840814A (de) * | 1971-09-25 | 1973-06-15 |
-
1975
- 1975-01-24 JP JP50009713A patent/JPS5185381A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4831514A (de) * | 1971-08-26 | 1973-04-25 | ||
JPS4840814A (de) * | 1971-09-25 | 1973-06-15 |
Cited By (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4942444A (en) * | 1978-08-10 | 1990-07-17 | Siemens Aktiengesellschaft | Thyristor |
US4959699A (en) * | 1978-10-13 | 1990-09-25 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US4705759A (en) * | 1978-10-13 | 1987-11-10 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5338961A (en) * | 1978-10-13 | 1994-08-16 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5191396A (en) * | 1978-10-13 | 1993-03-02 | International Rectifier Corp. | High power mosfet with low on-resistance and high breakdown voltage |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
JPH0370387B2 (de) * | 1978-10-13 | 1991-11-07 | Int Rectifier Corp | |
US5008725A (en) * | 1979-05-14 | 1991-04-16 | International Rectifier Corporation | Plural polygon source pattern for MOSFET |
US5130767A (en) * | 1979-05-14 | 1992-07-14 | International Rectifier Corporation | Plural polygon source pattern for mosfet |
JPS57141964A (en) * | 1981-02-26 | 1982-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
JPH0547982B2 (de) * | 1982-07-16 | 1993-07-20 | Nippon Electric Co | |
JPS5914676A (ja) * | 1982-07-16 | 1984-01-25 | Nec Corp | 縦型電界効果トランジスタの製造方法 |
US4686551A (en) * | 1982-11-27 | 1987-08-11 | Nissan Motor Co., Ltd. | MOS transistor |
US4803532A (en) * | 1982-11-27 | 1989-02-07 | Nissan Motor Co., Ltd. | Vertical MOSFET having a proof structure against puncture due to breakdown |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
JPS62122175A (ja) * | 1986-08-22 | 1987-06-03 | Nec Corp | 半導体装置 |
JPS6387769A (ja) * | 1987-07-17 | 1988-04-19 | Nec Corp | 電界効果トランジスタ |
JPS6387771A (ja) * | 1987-07-17 | 1988-04-19 | Nec Corp | 電界効果トランジスタ |
JPH0365026B2 (de) * | 1987-07-17 | 1991-10-09 | ||
US5243211A (en) * | 1991-11-25 | 1993-09-07 | Harris Corporation | Power fet with shielded channels |
US5663080A (en) * | 1991-11-29 | 1997-09-02 | Sgs-Thomson Microelectronics, S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5696399A (en) * | 1991-11-29 | 1997-12-09 | Sgs-Thomson Microelectronics S.R.L. | Process for manufacturing MOS-type integrated circuits |
US5323036A (en) * | 1992-01-21 | 1994-06-21 | Harris Corporation | Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
US5933733A (en) * | 1994-06-23 | 1999-08-03 | Sgs-Thomson Microelectronics, S.R.L. | Zero thermal budget manufacturing process for MOS-technology power devices |
US6140679A (en) * | 1994-06-23 | 2000-10-31 | Sgs-Thomson Microelectronics S.R.L. | Zero thermal budget manufacturing process for MOS-technology power devices |
US6369425B1 (en) | 1994-07-04 | 2002-04-09 | Sgs-Thomson Microelecttronica S.R.L. | High-density power device |
US5670392A (en) * | 1994-07-04 | 1997-09-23 | Sgs-Thomson Microelectronics S.R.L. | Process for manufacturing high-density MOS-technology power devices |
US5701023A (en) * | 1994-08-03 | 1997-12-23 | National Semiconductor Corporation | Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
US5897355A (en) * | 1994-08-03 | 1999-04-27 | National Semiconductor Corporation | Method of manufacturing insulated gate semiconductor device to improve ruggedness |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US6111297A (en) * | 1995-02-24 | 2000-08-29 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US5985721A (en) * | 1995-10-30 | 1999-11-16 | Sgs-Thomson Microelectronics, S.R.L. | Single feature size MOS technology power device |
US6054737A (en) * | 1995-10-30 | 2000-04-25 | Sgs-Thomson Microelectronics S.R.L. | High density MOS technology power device |
US6030870A (en) * | 1995-10-30 | 2000-02-29 | Sgs-Thomson Microelectronics, S.R.L. | High density MOS technology power device |
US5981998A (en) * | 1995-10-30 | 1999-11-09 | Sgs-Thomson Microelectronics S.R.L. | Single feature size MOS technology power device |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
US6051862A (en) * | 1995-12-28 | 2000-04-18 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US5841167A (en) * | 1995-12-28 | 1998-11-24 | Sgs-Thomson Microelectronics S.R.L. | MOS-technology power device integrated structure |
US6507070B1 (en) * | 1996-11-25 | 2003-01-14 | Semiconductor Components Industries Llc | Semiconductor device and method of making |
US6492691B2 (en) | 1998-05-26 | 2002-12-10 | Stmicroelectronics S.R.L. | High integration density MOS technology power device structure |
JP2003046082A (ja) * | 2001-05-25 | 2003-02-14 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4559691B2 (ja) * | 2001-05-25 | 2010-10-13 | 株式会社東芝 | 半導体装置の製造方法 |