JPH01297827A - Oxidization of semiconductor substrate and device therefor - Google Patents
Oxidization of semiconductor substrate and device thereforInfo
- Publication number
- JPH01297827A JPH01297827A JP12763788A JP12763788A JPH01297827A JP H01297827 A JPH01297827 A JP H01297827A JP 12763788 A JP12763788 A JP 12763788A JP 12763788 A JP12763788 A JP 12763788A JP H01297827 A JPH01297827 A JP H01297827A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- lamp
- substrate
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 230000001590 oxidative effect Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000003647 oxidation Effects 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 32
- 238000004140 cleaning Methods 0.000 abstract description 14
- 230000007246 mechanism Effects 0.000 abstract description 5
- 238000005108 dry cleaning Methods 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- -1 tungsten halogen Chemical class 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板を酸化する酸化装置及び酸化方法、
特に、極薄シリコン酸化膜を形成する酸化装置及び酸化
方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides an oxidation apparatus and an oxidation method for oxidizing a semiconductor substrate,
In particular, the present invention relates to an oxidation apparatus and an oxidation method for forming ultra-thin silicon oxide films.
極薄シリコン酸化膜は、ＭＯＳトランジスタのゲート膜
、ＤＲＡＭ容量部の容量膜に用いられ、集積回路を構成
する上に不可欠なものである。この極薄シリコン酸化膜
を形成するための装置として、ランプ加熱型酸化装置が
ある。Ultra-thin silicon oxide films are used as gate films of MOS transistors and capacitor films of DRAM capacitor sections, and are essential for constructing integrated circuits. As an apparatus for forming this extremely thin silicon oxide film, there is a lamp heating type oxidation apparatus.
ランプ加熱型酸化装置は、チャンバー内壁からの不純物
混入を避けるために、石英チャンバーを用いている。ま
た、ランプ放射赤外光の屈折を避けるために、石英チャ
ンバーとしては角型のものが用いられている。−射的な
ランプ加熱型酸化装置の概略を第３図に示す。石英チャ
ンバー１０２内のサセプタ１０５上に設置されるシリコ
ン基板１１５はタングステンハロゲンランプ１０３で赤
外線加熱され、酸化性ガスの導入により酸化される。１
０４は反射板である。ここで、酸化性ガスの圧力は、石
英チャンバー１０２の外部が常圧（〜１気圧）であるこ
とから、当然〜１気圧に設定される（チャンバー内／外
での圧力差が大きいと、石英チャンバーが破損する）。A lamp-heated oxidizer uses a quartz chamber to avoid contamination of impurities from the inner wall of the chamber. Further, in order to avoid refraction of the infrared light emitted by the lamp, a rectangular quartz chamber is used. -A schematic diagram of a radiation lamp heating type oxidation apparatus is shown in FIG. A silicon substrate 115 placed on a susceptor 105 in a quartz chamber 102 is heated by infrared rays with a tungsten halogen lamp 103 and oxidized by introducing an oxidizing gas. 1
04 is a reflecting plate. Here, since the outside of the quartz chamber 102 is at normal pressure (~1 atm), the pressure of the oxidizing gas is naturally set to ~1 atm (if the pressure difference inside/outside the chamber is large, the quartz damage to the chamber).
この酸化装置により実用に供し得る膜として１００人厚
０シリコン酸化膜を形成することができる。With this oxidation apparatus, a silicon oxide film with a thickness of 100 mm can be formed as a film that can be used practically.
しかしながら、上述したランプ加熱型酸化装置で、１６
ＭＤＲＡＭ等に必要な５０〜７０人厚の極薄シリコン酸
化膜を形成した場合、
■ 形成される膜の電気的耐圧が小さいこと、■ １６
ＭＤＲＡＭ等の超ＬＳＩのデバイス特性を満たすシリコ
ン−シリコン酸化膜界面特性が得られない。However, in the above-mentioned lamp heating type oxidizer, 16
When forming an ultra-thin silicon oxide film with a thickness of 50 to 70 layers, which is necessary for MDRAM, etc., ■ the electrical breakdown voltage of the formed film is small; ■ 16
Silicon-silicon oxide film interface characteristics that satisfy the device characteristics of ultra-LSIs such as MDRAMs cannot be obtained.
という問題が生じる。A problem arises.
本発明の目的は前記課題を解消した半導体基板の酸化方
法及びその装置を提供することにある。An object of the present invention is to provide a method for oxidizing a semiconductor substrate and an apparatus for the same, which solves the above-mentioned problems.
上述した従来のランプ加熱型酸化装置においては、酸化
前処理が不充分であることが一つの原因であり、これを
とり除くためには、酸化前処理としては、酸化装置と同
一チャンバー内での基板加熱ドライ洗浄が良いこと、さ
らに、洗浄ガスの圧力は１０Ｔｏｒｒ以下にすべきであ
る。One of the reasons for the above-mentioned conventional lamp heating type oxidation equipment is that the oxidation pretreatment is insufficient. Heated dry cleaning is preferred, and the pressure of the cleaning gas should be 10 Torr or less.
また、酸化時の酸化性ガスの圧力が常圧であるため、成
膜課程が完全に制御された酸化が行われていないことが
二つ目の原因であり、これをとり除くためには、酸化時
の酸化性ガスの圧力を１０ＴＯｒｒ以下にすべきである
。The second reason is that the oxidizing gas pressure during oxidation is normal pressure, so the oxidation process is not completely controlled. The pressure of the oxidizing gas should be 10 TOrr or less.
そこで、本発明のランプ加熱型酸化装置は、角型石英チ
ャンバー内の真空排気が可能な構造をもつという相違点
を有し、かつ本発明のランプ加熱酸化方法は圧力１０Ｔ
ｏｒｒ以下での洗浄ガスによるランプ加熱ドライ洗浄工
程と圧力１０Ｔｏｒｒ以下での酸化性ガスによるランプ
加熱酸化工程とを有するという相違点がある。Therefore, the lamp-heated oxidation apparatus of the present invention has a structure that allows evacuation of the square quartz chamber, and the lamp-heated oxidation method of the present invention has a pressure of 10T.
There is a difference in that there is a lamp heating dry cleaning process using a cleaning gas at a pressure of 10 Torr or less and a lamp heating oxidation process using an oxidizing gas at a pressure of 10 Torr or less.
上記目的を達成するため、本発明に係る半導体基板の酸
化方法においては、半導体基板を収容したチャンバーと
、該チャンバーを内包する真空容器とをそれぞれ独立に
真空排気し、前記チャンバー内にＨＦガス或いはＨＣＯ
ガス等の前処理ガスを１０Ｔｏｒｒ以下の圧力に制御し
て導入するとともに前記半導体基板を加熱して基板酸化
前処理を行い、続いて前処理ガスの供給を停止させてチ
ャンバー内を真空排気した後、Ｏ２等の酸化性ガスを１
０Ｔｏｒｒ以下の圧力に制御して導入し基板酸化を行う
ものである。In order to achieve the above object, in the method for oxidizing a semiconductor substrate according to the present invention, a chamber containing a semiconductor substrate and a vacuum container containing the chamber are independently evacuated, and HF gas or H.C.O.
A pretreatment gas such as a gas is introduced at a controlled pressure of 10 Torr or less, and the semiconductor substrate is heated to perform a substrate oxidation pretreatment, and then the supply of the pretreatment gas is stopped and the chamber is evacuated. , 1 oxidizing gas such as O2
The substrate is oxidized by controlling the pressure to be 0 Torr or less.
また、本発明に係る半導体基板の酸化装置においては、
酸化処理用ガスの給排気を備えたチャンバーと、該チャ
ンバー内の半導体基板を加熱する加熱部と、前記チャン
バー及び加熱部を内包する真空容器と、前記チャンバー
と真空容器の内部を独立に真空排気する真空排気部と、
該真空排気部を駆動制御して前記チャンバーと真空容器
の真空度の差を設定値に制御する真空度差制御部とを有
するものである。Furthermore, in the semiconductor substrate oxidation apparatus according to the present invention,
a chamber equipped with supply and exhaust gas for oxidation processing, a heating section that heats the semiconductor substrate in the chamber, a vacuum container containing the chamber and the heating section, and independently evacuating the inside of the chamber and the vacuum container. a vacuum exhaust section,
The apparatus includes a vacuum degree difference control section that drives and controls the vacuum evacuation section to control the difference in the degree of vacuum between the chamber and the vacuum container to a set value.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明のランプ加熱型酸化装置の断面図である
。第１図において、１０２は角型石英チャンバー、１０
３はタングステンハロゲンランプ、１０４は反射板であ
る。これらが真空容器１０１内に設置されている。角型
石英チャンバー１０２はチャンバー排気部１０８により
真空排気される。さらに真空容器１０１は真空容器排気
部１０９により真空排気される。ここで、チャンバー内
圧力調整機構１０６と真空容器内圧力調整機構１０７と
を真空度差制御部１１０で連動制御することにより、石
英チャンバー内圧力と真空容器内圧力との差が１０Ｔｏ
ｒｒ以下に制御される。これにより、石英チャンバー内
／外での圧力差が大きい場合におこる角型石英チャンバ
ー破損を防止することができる。酸化性ガスバルブ１１
１を閉じ、洗浄ガスバルブ１１２を開けることにより、
洗浄ガスボンベ１１４の洗浄ガスをチャンバー内に導入
できる。また、洗浄ガスバルブ１１２を閉じ、酸化性ガ
スバルブ１１１を開けることにより、酸化性ガスボンベ
１１３の酸化性ガスをチャンバー内に導入できる。チャ
ンバー内において、基板１１５はサセプタ１０５上に設
置される。FIG. 1 is a sectional view of a lamp-heated oxidation apparatus of the present invention. In FIG. 1, 102 is a square quartz chamber;
3 is a tungsten halogen lamp, and 104 is a reflector. These are installed inside the vacuum container 101. The square quartz chamber 102 is evacuated by a chamber exhaust section 108. Further, the vacuum container 101 is evacuated by a vacuum container exhaust section 109. Here, by controlling the chamber internal pressure adjustment mechanism 106 and the vacuum container internal pressure adjustment mechanism 107 in conjunction with the vacuum degree difference control section 110, the difference between the quartz chamber internal pressure and the vacuum container internal pressure is 10To.
Controlled below rr. This makes it possible to prevent damage to the square quartz chamber that would otherwise occur if the pressure difference between the inside and outside of the quartz chamber is large. Oxidizing gas valve 11
1 and open the cleaning gas valve 112.
Cleaning gas from a cleaning gas cylinder 114 can be introduced into the chamber. Further, by closing the cleaning gas valve 112 and opening the oxidizing gas valve 111, the oxidizing gas from the oxidizing gas cylinder 113 can be introduced into the chamber. A substrate 115 is placed on the susceptor 105 within the chamber.
続いて、本発明の酸化法に関し図面を用いて説明する。Next, the oxidation method of the present invention will be explained using the drawings.
第２図は本発明の酸化法に基づ〈実施例を説明するため
のフローチャートである。FIG. 2 is a flowchart for explaining an embodiment based on the oxidation method of the present invention.
本発明は半導体基板１１５をチャンバー１０２内に設置
した後、前処理ガスを１０Ｔｏｒｒ以下の圧力に制御導
入して基板酸化前処理を行う工程と、酸化性ガスを１０
Ｔｏｒｒ以下の圧力に制御導入して基板酸化を行う工程
とを行う。この実施例においては、第１図に示す本発明
のランプ加熱型酸化装置が用いられた。The present invention includes a step of pre-oxidizing the substrate by introducing a pre-processing gas to a pressure of 10 Torr or less after placing the semiconductor substrate 115 in the chamber 102, and a step of pre-oxidizing the substrate by introducing a pre-processing gas at a pressure of 10 Torr or less.
A step of oxidizing the substrate by controlling the pressure to be less than or equal to Torr is performed. In this example, the lamp heating type oxidation apparatus of the present invention shown in FIG. 1 was used.
基板として、Ｐ型、 （１００） 、 ６インチ基板を
チャンバー１０２内に設置し、真空排気工程を２分間行
い、洗浄ガスとしてＨＣＱ／Ｈｚ／Ａｒ（成分比１：１
：５）を５ Ｔｏｒｒ圧力下で導入制御し、ランプ１０
３を点灯し、８００℃の基板温度下で１分間の酸化前処
理を行う。ランプ消灯と同時に洗浄ガス導入を止め、チ
ャンバー１０２内を真空排気し、続いて酸化性ガスとし
てｏ２ガスを導入し、圧力を５ Ｔｏｒｒに制御した後
、ランプ１０３を点灯し基板温度１０５０°Ｃ下で酸化
を行い、６０人厚のシリコン酸化膜を形成した。A P-type, (100), 6-inch substrate was placed in the chamber 102, a vacuum evacuation process was performed for 2 minutes, and HCQ/Hz/Ar (component ratio 1:1) was used as a cleaning gas.
:5) was introduced under a pressure of 5 Torr, and the lamp 10
3 is turned on, and oxidation pretreatment is performed for 1 minute at a substrate temperature of 800°C. At the same time as the lamp is turned off, the introduction of the cleaning gas is stopped, the inside of the chamber 102 is evacuated, O2 gas is introduced as an oxidizing gas, the pressure is controlled to 5 Torr, and the lamp 103 is turned on to lower the substrate temperature to 1050°C. oxidation was performed to form a silicon oxide film with a thickness of 60 mm.
従来のランプ加熱型酸化装置により形成される極薄シリ
コン酸化膜の問題点が、本発明により解決されているこ
とを確かめるために、上記６０人厚のシリコン酸化膜の
耐圧、界面電荷密度の測定を行った。その結果、従来の
シリコン酸化膜の耐圧が６±３ＭＶ／ａｎ、界面電荷密
度がＱｓｓ／ｇ＝５Ｘ１０１０ａ１１−２であったのに
対し、本発明によるシリコン酸化膜の耐圧は１１±ＩＭ
Ｖ／ ａｎ、界面電荷密度は８×１０９■−２と優れた
ものであった。In order to confirm that the problems of ultra-thin silicon oxide films formed by conventional lamp heating type oxidation equipment are solved by the present invention, the withstand voltage and interfacial charge density of the silicon oxide film with a thickness of 60 people were measured. I did it. As a result, while the conventional silicon oxide film had a breakdown voltage of 6±3MV/an and an interfacial charge density of Qss/g=5X1010a11-2, the silicon oxide film according to the present invention had a breakdown voltage of 11±IM
The V/an and interfacial charge density were excellent at 8 x 109 -2.
以上説明したように本発明のランプ加熱型酸化装置は角
型石英チャンバーと角型石英チャンバー内に赤外光を照
射するランプとを一つの真空容器内に設置し、かつ角型
石英チャンバーと該真空容器とを同一の圧力に制御する
ため、角型石英チャンバーを破損することなく真空排気
できる効果がある。As explained above, the lamp-heated oxidation apparatus of the present invention includes a square quartz chamber and a lamp that irradiates infrared light into the square quartz chamber in one vacuum container, and a square quartz chamber and a lamp that irradiates infrared light into the square quartz chamber. Since the pressure is controlled to be the same as that of the vacuum container, it is possible to evacuate the square quartz chamber without damaging it.
また、上記装置を用いた本発明の酸化法は圧力１０Ｔｏ
ｒｒ以下での洗浄ガスによるランプ加熱ドライ洗浄工程
と、圧力１０Ｔｏｒｒ以下での酸化性ガスによるランプ
加熱型酸化工程とからなる成膜を行うため、特性の良い
５０〜７０人厚のシリコン酸化膜を形成できる効果があ
る。Furthermore, the oxidation method of the present invention using the above-mentioned apparatus is performed at a pressure of 10To
In order to form a film that consists of a lamp heating dry cleaning process using a cleaning gas at a pressure below RR and a lamp heating type oxidation process using an oxidizing gas at a pressure below 10 Torr, a silicon oxide film with a thickness of 50 to 70 mm with good characteristics is formed. There is an effect that can be formed.
第１図は本発明のランプ加熱型酸化装置を示す断面図、
第２図は本発明に基づく酸化プロセスのフローチャート
、第３図は従来のランプ加熱型酸化装置を示す断面図で
ある。
１０１・・・真空容器 １０２・・角型石英チャ
ンバー１０３・・・タングステンハロゲンランプ１０４
反射板 １０５・・・サセプタ１０６・・
・チャンバー内圧力調整機構１０７・・・真空容器内圧
力調整機構
１０８・・チャンバー排気部 １０９・・・真空容器排
気部１１０・・・真空度差制御部 １１１・・・酸化性
ガスバルブ１１２・・・洗浄ガスバルブ １１３・・・
酸化性ガスボンベ１１４・・・洗浄ガスボンベ １１５
・・・基板基板設璽FIG. 1 is a sectional view showing a lamp-heated oxidation device of the present invention;
FIG. 2 is a flowchart of the oxidation process according to the present invention, and FIG. 3 is a sectional view showing a conventional lamp heating type oxidation apparatus. 101... Vacuum container 102... Square quartz chamber 103... Tungsten halogen lamp 104
Reflector plate 105...Susceptor 106...
- Chamber internal pressure adjustment mechanism 107... Vacuum container internal pressure adjustment mechanism 108... Chamber exhaust section 109... Vacuum container exhaust section 110... Vacuum degree difference control section 111... Oxidizing gas valve 112... Cleaning gas valve 113...
Oxidizing gas cylinder 114...Cleaning gas cylinder 115
・・・Substrate board setting
Claims (2)
ーを内包する真空容器とをそれぞれ独立に真空排気し、
前記チャンバー内にＨＦガス或いはＨＣｌガス等の前処
理ガスを１０Ｔｏｒｒ以下の圧力に制御して導入すると
ともに前記半導体基板を加熱して基板酸化前処理を行い
、続いて前処理ガスの供給を停止させてチャンバー内を
真空排気した後、Ｏ＿２等の酸化性ガスを１０Ｔｏｒｒ
以下の圧力に制御して導入し基板酸化を行うことを特徴
とする半導体基板の酸化方法。(1) The chamber containing the semiconductor substrate and the vacuum container containing the chamber are each independently evacuated,
A pretreatment gas such as HF gas or HCl gas is introduced into the chamber under a controlled pressure of 10 Torr or less, and the semiconductor substrate is heated to perform a substrate oxidation pretreatment, and then the supply of the pretreatment gas is stopped. After evacuating the chamber, oxidizing gas such as O_2 was heated to 10 Torr.
A method for oxidizing a semiconductor substrate, characterized by oxidizing the substrate by controlling the pressure as follows.
該チャンバー内の半導体基板を加熱する加熱部と、前記
チャンバー及び加熱部を内包する真空容器と、前記チャ
ンバーと真空容器の内部を独立に真空排気する真空排気
部と、該真空排気部を駆動制御して前記チャンバーと真
空容器の真空度の差を設定値に制御する真空度差制御部
とを有することを特徴とする半導体基板の酸化装置。(2) a chamber equipped with supply and exhaust gas for oxidation treatment;
a heating section that heats a semiconductor substrate in the chamber; a vacuum container that includes the chamber and the heating section; a vacuum evacuation section that independently evacuates the interior of the chamber and the vacuum container; and drive control of the evacuation section. An oxidation apparatus for a semiconductor substrate, comprising: a vacuum degree difference control section that controls a difference in vacuum degree between the chamber and the vacuum container to a set value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12763788A JPH01297827A (en) | 1988-05-25 | 1988-05-25 | Oxidization of semiconductor substrate and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12763788A JPH01297827A (en) | 1988-05-25 | 1988-05-25 | Oxidization of semiconductor substrate and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01297827A true JPH01297827A (en) | 1989-11-30 |
Family
ID=14965022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12763788A Pending JPH01297827A (en) | 1988-05-25 | 1988-05-25 | Oxidization of semiconductor substrate and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01297827A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5693578A (en) * | 1993-09-17 | 1997-12-02 | Fujitsu, Ltd. | Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance |
| US5786277A (en) * | 1995-09-29 | 1998-07-28 | Nec Corporation | Method of manufacturing a semiconductor device having an oxide film of a high quality on a semiconductor substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147250A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Treatment method of semiconductor substrate |
| JPS60231351A (en) * | 1984-04-27 | 1985-11-16 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6224630A (en) * | 1985-07-24 | 1987-02-02 | Mitsubishi Electric Corp | Formation of thermal oxidation film and device therefor |
-
1988
- 1988-05-25 JP JP12763788A patent/JPH01297827A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147250A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Treatment method of semiconductor substrate |
| JPS60231351A (en) * | 1984-04-27 | 1985-11-16 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6224630A (en) * | 1985-07-24 | 1987-02-02 | Mitsubishi Electric Corp | Formation of thermal oxidation film and device therefor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5693578A (en) * | 1993-09-17 | 1997-12-02 | Fujitsu, Ltd. | Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance |
| US5786277A (en) * | 1995-09-29 | 1998-07-28 | Nec Corporation | Method of manufacturing a semiconductor device having an oxide film of a high quality on a semiconductor substrate |
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