JPS51147184A - Method of mawufacturing of mosic circuit device - Google Patents
Method of mawufacturing of mosic circuit deviceInfo
- Publication number
- JPS51147184A JPS51147184A JP7063275A JP7063275A JPS51147184A JP S51147184 A JPS51147184 A JP S51147184A JP 7063275 A JP7063275 A JP 7063275A JP 7063275 A JP7063275 A JP 7063275A JP S51147184 A JPS51147184 A JP S51147184A
- Authority
- JP
- Japan
- Prior art keywords
- mosic
- mawufacturing
- circuit device
- voltage
- threshold value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To change a threshold value of voltage in predetermined MOST on the same substrate of MOSIC by means of simple manufacturing process.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7063275A JPS51147184A (en) | 1975-06-11 | 1975-06-11 | Method of mawufacturing of mosic circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7063275A JPS51147184A (en) | 1975-06-11 | 1975-06-11 | Method of mawufacturing of mosic circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51147184A true JPS51147184A (en) | 1976-12-17 |
Family
ID=13437197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7063275A Pending JPS51147184A (en) | 1975-06-11 | 1975-06-11 | Method of mawufacturing of mosic circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51147184A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5333074A (en) * | 1976-09-08 | 1978-03-28 | Sanyo Electric Co Ltd | Production of complementary type insulated gate field effect semiconductor device |
JPS6418263A (en) * | 1987-07-14 | 1989-01-23 | Sanyo Electric Co | Manufacture of depletion mode metal-oxide semiconductor device |
JPH04264753A (en) * | 1991-02-19 | 1992-09-21 | Nec Corp | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4929792A (en) * | 1972-07-18 | 1974-03-16 | ||
JPS5066181A (en) * | 1973-10-12 | 1975-06-04 |
-
1975
- 1975-06-11 JP JP7063275A patent/JPS51147184A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4929792A (en) * | 1972-07-18 | 1974-03-16 | ||
JPS5066181A (en) * | 1973-10-12 | 1975-06-04 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5333074A (en) * | 1976-09-08 | 1978-03-28 | Sanyo Electric Co Ltd | Production of complementary type insulated gate field effect semiconductor device |
JPS6418263A (en) * | 1987-07-14 | 1989-01-23 | Sanyo Electric Co | Manufacture of depletion mode metal-oxide semiconductor device |
JPH04264753A (en) * | 1991-02-19 | 1992-09-21 | Nec Corp | Manufacture of semiconductor device |
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