JPS5091272A - - Google Patents

Info

Publication number
JPS5091272A
JPS5091272A JP13775273A JP13775273A JPS5091272A JP S5091272 A JPS5091272 A JP S5091272A JP 13775273 A JP13775273 A JP 13775273A JP 13775273 A JP13775273 A JP 13775273A JP S5091272 A JPS5091272 A JP S5091272A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13775273A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13775273A priority Critical patent/JPS5091272A/ja
Publication of JPS5091272A publication Critical patent/JPS5091272A/ja
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)
JP13775273A 1973-12-12 1973-12-12 Pending JPS5091272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13775273A JPS5091272A (ja) 1973-12-12 1973-12-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13775273A JPS5091272A (ja) 1973-12-12 1973-12-12

Publications (1)

Publication Number Publication Date
JPS5091272A true JPS5091272A (ja) 1975-07-21

Family

ID=15205994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13775273A Pending JPS5091272A (ja) 1973-12-12 1973-12-12

Country Status (1)

Country Link
JP (1) JPS5091272A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374384A (en) * 1976-12-15 1978-07-01 Toshiba Corp Semiconductor device and its manufacture
JPS54152868A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Manufacture of semiconductor device
JPS55130168A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Method of forming mos oxide film
JPS60154628A (ja) * 1984-01-25 1985-08-14 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61193456A (ja) * 1985-02-21 1986-08-27 Toshiba Corp 半導体素子の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374384A (en) * 1976-12-15 1978-07-01 Toshiba Corp Semiconductor device and its manufacture
JPS54152868A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Manufacture of semiconductor device
JPS55130168A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Method of forming mos oxide film
JPS6131613B2 (ja) * 1979-03-29 1986-07-21 Fujitsu Ltd
JPS60154628A (ja) * 1984-01-25 1985-08-14 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS61193456A (ja) * 1985-02-21 1986-08-27 Toshiba Corp 半導体素子の製造方法
JPH0380338B2 (ja) * 1985-02-21 1991-12-24 Toshiba Kk

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