JPS4853679A - - Google Patents
Info
- Publication number
- JPS4853679A JPS4853679A JP10765472A JP10765472A JPS4853679A JP S4853679 A JPS4853679 A JP S4853679A JP 10765472 A JP10765472 A JP 10765472A JP 10765472 A JP10765472 A JP 10765472A JP S4853679 A JPS4853679 A JP S4853679A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19396171A | 1971-10-29 | 1971-10-29 | |
US19385371A | 1971-10-29 | 1971-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4853679A true JPS4853679A (de) | 1973-07-27 |
JPS5231153B2 JPS5231153B2 (de) | 1977-08-12 |
Family
ID=26889421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10765472A Expired JPS5231153B2 (de) | 1971-10-29 | 1972-10-28 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5231153B2 (de) |
DE (1) | DE2253001A1 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4982280A (de) * | 1972-12-11 | 1974-08-08 | ||
JPS50104872A (de) * | 1974-01-17 | 1975-08-19 | ||
JPS5146077A (ja) * | 1974-10-18 | 1976-04-20 | Hitachi Ltd | Handotaisochi |
JPS5169368A (en) * | 1974-12-12 | 1976-06-15 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
JPS5359377A (en) * | 1976-01-12 | 1978-05-29 | Tdk Corp | Insulating gate type electric field effect semiconductor unit and itsproduction |
-
1972
- 1972-10-28 DE DE19722253001 patent/DE2253001A1/de active Pending
- 1972-10-28 JP JP10765472A patent/JPS5231153B2/ja not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4982280A (de) * | 1972-12-11 | 1974-08-08 | ||
JPS5815934B2 (ja) * | 1972-12-11 | 1983-03-28 | 富士通株式会社 | ハンドウタイソウチ ノ セイゾウホウホウ |
JPS50104872A (de) * | 1974-01-17 | 1975-08-19 | ||
JPS5524701B2 (de) * | 1974-01-17 | 1980-07-01 | ||
JPS5146077A (ja) * | 1974-10-18 | 1976-04-20 | Hitachi Ltd | Handotaisochi |
JPS5169368A (en) * | 1974-12-12 | 1976-06-15 | Matsushita Electric Ind Co Ltd | Handotaisochino seizohoho |
JPS5359377A (en) * | 1976-01-12 | 1978-05-29 | Tdk Corp | Insulating gate type electric field effect semiconductor unit and itsproduction |
JPS597230B2 (ja) * | 1976-01-12 | 1984-02-17 | ティーディーケイ株式会社 | 絶縁ゲイト型電界効界半導体装置およびその作製方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5231153B2 (de) | 1977-08-12 |
DE2253001A1 (de) | 1973-05-10 |