JPH1187275A - Method and system for filling fine recess with liquid and plating method for fine recess - Google Patents
Method and system for filling fine recess with liquid and plating method for fine recessInfo
- Publication number
- JPH1187275A JPH1187275A JP25282597A JP25282597A JPH1187275A JP H1187275 A JPH1187275 A JP H1187275A JP 25282597 A JP25282597 A JP 25282597A JP 25282597 A JP25282597 A JP 25282597A JP H1187275 A JPH1187275 A JP H1187275A
- Authority
- JP
- Japan
- Prior art keywords
- fine
- liquid
- plating
- filling
- mist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体ウエハ等の基
材表面に設けた微細な窪み内部にメッキ液等の所望の液
体を充填するのに好適な微細窪みへの液充填方法及び装
置、及び微細窪みへのメッキ方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for filling a fine recess suitable for filling a desired liquid such as a plating solution into a fine recess provided on the surface of a base material such as a semiconductor wafer. The present invention relates to a method for plating fine recesses.
【０００２】[0002]
【従来の技術】従来、半導体素子用の配線として一般に
アルミニウム合金が用いられてきた。しかしながら配線
幅の微細化によってアルミニウム合金の電気抵抗が無視
できなくなってそのスイッチング速度に限界が生じるよ
うになってきた。またアルミニウム合金構成原子のマイ
グレーション（ストレスマイグレーション，エレクトロ
マイグレーション）による配線の断線化の恐れも生じて
きた。2. Description of the Related Art Heretofore, aluminum alloys have been generally used as wiring for semiconductor devices. However, as the wiring width becomes finer, the electrical resistance of the aluminum alloy cannot be ignored and the switching speed has been limited. In addition, there is a fear that the wiring may be disconnected due to migration of aluminum alloy constituent atoms (stress migration, electromigration).
【０００３】そこで近年アルミニウム合金よりもその電
気比抵抗値が小さい銅材が注目され、これを半導体素子
の配線に使用することが考えられている。なお銀も電気
比抵抗値が小さいが、高価で低強度かつ低耐食性で拡散
し易いので銅の方が良い。In recent years, attention has been paid to a copper material having an electric resistivity smaller than that of an aluminum alloy, and it has been considered to use the copper material for wiring of a semiconductor element. Although silver also has a small electrical resistivity, copper is preferred because it is expensive, has low strength and low corrosion resistance, and is easily diffused.
【０００４】なお銅材は実用的なドライエッチングの技
術が未確立のため従来のアルミニウム合金と異なり、ス
パッタリング成膜とドライエッチングを組合せた配線形
成法を用いることが現状ではできないので、その代りに
窪みを持った絶縁層の穴埋めと、それに続く化学機械研
摩法（ＣＭＰ法）を用いて配線やプラグ等を形成する方
法が注目されている。[0004] Since a practical dry etching technique has not been established for copper materials, unlike a conventional aluminum alloy, it is not possible at present to use a wiring forming method combining sputtering film formation and dry etching. Attention has been paid to a method of filling a hole in an insulating layer having a depression and subsequently forming a wiring, a plug, and the like by using a chemical mechanical polishing method (CMP method).
【０００５】即ち例えば図４（ａ）に示すように、半導
体ウエハ１００表面のＳｉＯ2絶縁層２０２中に、配線
用の溝２０３と下部の導電層２２１と接続する筒状のコ
ンタクトホール２０１とを形成し、その上にバリア層２
０５を形成したものを用意する。バリア層２０５は下記
する銅の拡散防止用に設けられている。That is, as shown in FIG. 4A, for example, a trench 203 for wiring and a cylindrical contact hole 201 connected to the lower conductive layer 221 are formed in the SiO 2 insulating layer 202 on the surface of the semiconductor wafer 100. Formed on the barrier layer 2
The one on which 05 is formed is prepared. The barrier layer 205 is provided for preventing copper diffusion described below.
【０００６】次に図４（ｂ）に示すようにこの半導体ウ
エハ１００をメッキ液に浸漬した後水洗することによっ
てその表面全体に銅層２０７を形成するが、その際溝２
０３とコンタクトホール２０１内を銅で完全に埋める。Next, as shown in FIG. 4B, the semiconductor wafer 100 is immersed in a plating solution and then washed with water to form a copper layer 207 on the entire surface thereof.
03 and the inside of the contact hole 201 are completely filled with copper.
【０００７】次に化学機械研摩により、図４（ｃ）に示
すように絶縁層２０２表面上の銅層２０７とバリア層２
０５を除去し、これによって銅を埋め込んだ配線２１１
及びプラグ２１３が形成される。Next, as shown in FIG. 4C, the copper layer 207 on the surface of the insulating layer 202 and the barrier layer 2 are formed by chemical mechanical polishing.
05 is removed, and thereby the wiring 211 in which copper is buried.
And a plug 213 are formed.
【０００８】[0008]
【発明が解決しようとする課題】ところで配線２１１や
プラグ２１３を形成するための溝２０３やコンタクトホ
ール２０１等の窪みの幅は、半導体素子の集積化による
微細化のためますます狭小なもの、例えば０．１８μｍ
や０．１３μｍ程度の幅のものが要求されている。By the way, the widths of the recesses such as the trenches 203 and the contact holes 201 for forming the wiring 211 and the plug 213 are becoming increasingly narrower due to miniaturization due to the integration of semiconductor elements. 0.18μm
And a width of about 0.13 μm is required.
【０００９】しかしながらこのように溝２０３やコンタ
クトホール２０１等の窪みが微細化してくると、この半
導体ウエハ１００をメッキ液中に浸漬しても、該溝２０
３やコンタクトホール２０１内にあった空気が表面張力
などによってそのまま残留してしまう恐れが増大する。
特にコンタクトホール２０１などはその幅に対して深さ
が深いので（例えばそのアスペクト比〔深さ／幅〕≒５
等）、内部に空気が残留し易い。However, when the recesses such as the groove 203 and the contact hole 201 are miniaturized, even if the semiconductor wafer 100 is immersed in a plating solution,
There is an increased possibility that air existing in the contact hole 3 or the contact hole 201 remains as it is due to surface tension or the like.
In particular, since the contact hole 201 and the like are deeper than the width thereof (for example, the aspect ratio [depth / width]) ≒ 5
Etc.), air tends to remain inside.
【００１０】適切なメッキを行うためには、窪み内表面
をメッキ液で十分濡らすことが必要なので、もし空気が
残留してしまうと該溝２０３やコンタクトホール２０１
内部にメッキ液が浸入することを阻害する結果、メッキ
によって該窪み内部に銅を埋め込むことができなくなっ
てしまう。In order to perform appropriate plating, it is necessary to sufficiently wet the inner surface of the dent with a plating solution. Therefore, if air remains, the groove 203 and the contact hole 201 are not removed.
As a result of preventing the plating solution from penetrating into the inside, it becomes impossible to bury copper inside the recess by plating.
【００１１】本発明は上述の点に鑑みてなされたもので
ありその目的は、微細な窪みの内部にメッキ液等の各種
液体を充填することができる微細窪みへの液充填方法及
び装置、及び微細窪みへのメッキ方法を提供することに
ある。The present invention has been made in view of the above points, and has as its object to provide a method and an apparatus for filling a fine dent with a liquid capable of filling various liquids such as a plating solution inside the fine dent, and It is an object of the present invention to provide a plating method for fine depressions.
【００１２】[0012]
【課題を解決するための手段】上記問題点を解決するた
め本発明は、基材表面に設けた微細な窪み内部に所望の
液体を充填する微細窪みへの液充填方法において、少な
くとも前記基材の微細な窪みを設けた部分の表面に所望
のミストを触れさせることによって該微細な窪みの内面
にミストを吸着せしめて濡れた状態とし、さらに該基材
の微細な窪みを設けた部分の表面に所望の液体を触れさ
せることによって前記濡れた状態の微細な窪み内を所望
の液体で満たすように構成した。また本発明は、基材表
面に設けた微細な窪み内部に所望の液体を充填する微細
窪みへの液充填装置において、少なくとも前記基材の微
細な窪みを設けた部分の周囲の空間を覆う処理槽と、処
理槽内に所望のミストを導入して微細な窪み内を濡れた
状態とせしめるミスト供給手段と、処理槽内に所望の液
体を供給することによって前記基材の濡れた状態の微細
な窪み内を所望の液体で満たす液体供給手段とを具備せ
しめて構成した。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a method for filling a fine dent provided in a fine dent provided on the surface of a substrate with a desired liquid, the method comprising: The surface of the portion provided with the fine dents of the base material is made to adhere to the surface of the portion provided with the fine dents by contacting a desired mist with the mist on the inner surface of the fine dents to make it wet. Then, the inside of the wet fine pit is filled with a desired liquid by contacting the desired liquid with the desired liquid. The present invention also provides a liquid filling apparatus for filling a desired liquid into a fine dent provided on the surface of a base material, wherein at least a space around a portion of the base material where the fine dent is provided is covered. A tank, mist supply means for introducing a desired mist into the processing tank to make the inside of the fine pit wet, and supplying a desired liquid into the processing tank to form the fine base material in a wet state. And a liquid supply means for filling the inside of the hollow with a desired liquid.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施形態の例を図
面に基づいて詳細に説明する。図１は本発明を半導体ウ
エハ表面に形成したプラグ用や配線用の微細な窪み内を
メッキで埋めるメッキ装置に利用した一実施形態を示す
全体概略構成図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is an overall schematic configuration diagram showing an embodiment in which the present invention is applied to a plating apparatus that fills a fine recess for a plug or wiring formed on the surface of a semiconductor wafer with plating.
【００１４】同図に示すようにこの装置は、真空室を兼
用するメッキ処理槽１に不活性ガス及びミスト供給手段
３と真空排気手段５と液体供給手段７とを接続して構成
されている。以下各構成部材について説明する。As shown in FIG. 1, this apparatus is constituted by connecting an inert gas and mist supply means 3, an evacuation means 5 and a liquid supply means 7 to a plating tank 1 also serving as a vacuum chamber. . Hereinafter, each component will be described.
【００１５】メッキ処理槽１は、半導体ウエハ１００を
収納した状態でその周囲の空間を密封する構造の槽１１
に、冷却ジャケット１５とファン１７より構成される冷
却手段１３を取り付けて構成されている。The plating tank 1 has a structure in which the semiconductor wafer 100 is housed and the surrounding space is sealed.
And a cooling means 13 composed of a cooling jacket 15 and a fan 17.
【００１６】不活性ガス及びミスト供給手段３は、アル
ゴンボンベ３３から配管３５とバルブ３７を介してメッ
キ処理槽１に接続される不活性ガス供給手段３１と、配
管３５から分岐する配管４３とバルブ４５とバブラ４６
と配管４７とバルブ４９を介してメッキ処理槽１に接続
されるミスト供給手段４１とを具備して構成されてい
る。The inert gas and mist supply means 3 includes an inert gas supply means 31 connected from the argon cylinder 33 to the plating tank 1 via a pipe 35 and a valve 37, a pipe 43 branched from the pipe 35, and a valve. 45 and bubbler 46
And a mist supply means 41 connected to the plating tank 1 via a pipe 47 and a valve 49.
【００１７】ここでバブラ４６は槽４６１内に銅メッキ
用のメッキ液を蓄えており、前記配管４３の先端をメッ
キ液中に差し込み、一方配管４７の先端をメッキ液表面
の上部に開放して構成されている。Here, the bubbler 46 stores a plating solution for copper plating in a tank 461, and inserts the tip of the pipe 43 into the plating solution, while opening the tip of the pipe 47 above the surface of the plating solution. It is configured.
【００１８】次に真空排気手段５は、メッキ処理槽１に
配管５１とバルブ５３を介して真空ポンプ５５を接続し
て構成されている。Next, the vacuum evacuation means 5 is configured by connecting a vacuum pump 55 to the plating tank 1 via a pipe 51 and a valve 53.
【００１９】液体供給手段７は、銅メッキ用のメッキ液
を蓄えておく貯留槽７１と、送液ポンプ７３とフィルタ
７５とを配管７７によってメッキ処理槽１に接続し、メ
ッキ液を系内に循環するように構成されている。配管７
７にはバルブ７６，７８が取り付けられている。The liquid supply means 7 connects a storage tank 71 for storing a plating solution for copper plating, a liquid sending pump 73 and a filter 75 to the plating tank 1 via a pipe 77, and transfers the plating solution into the system. It is configured to circulate. Piping 7
7, valves 76 and 78 are attached.
【００２０】次にこのメッキ装置の操作手順を図１，図
２を用いて説明する。即ちまず各バルブ３７，４５，４
９，５３，７６，７８を閉じた状態で、メッキ処理槽１
の冷却手段１３にてその槽１１内を冷却保持する（ステ
ップ１）。Next, the operation procedure of the plating apparatus will be described with reference to FIGS. That is, first, each of the valves 37, 45, 4
9, 53, 76 and 78 are closed, and the plating tank 1
The inside of the tank 11 is cooled and held by the cooling means 13 (step 1).
【００２１】次に十分冷却した槽１１内に半導体ウエハ
１００を収納し、これも十分冷却する（ステップ２）。Next, the semiconductor wafer 100 is stored in the sufficiently cooled tank 11, and this is also sufficiently cooled (step 2).
【００２２】次にバルブ５３を開いて真空ポンプ５５を
駆動し、槽１１内を真空排気する（ステップ３）。この
真空中に半導体ウエハ１００を保つことによって半導体
ウエハ１００の微細窪み１０１内部の表面に存在、吸着
していたガスは急速に吸引され排出され微細窪み１０１
内も真空状態とされる。Next, the valve 53 is opened and the vacuum pump 55 is driven to evacuate the tank 11 (step 3). By keeping the semiconductor wafer 100 in this vacuum, the gas existing and adsorbed on the surface inside the fine dent 101 of the semiconductor wafer 100 is rapidly sucked and discharged, and is discharged.
The inside is also in a vacuum state.
【００２３】なお前記真空排気を行なっているときに、
バルブ４５及び４９を徐々に開く。そうすればアルゴン
ボンベ３３からアルゴンガスがバブラ４６のメッキ液内
を気泡となって流れ、処理槽１１内部へと流入し更に真
空ポンプ５５で排気される。この操作によってバブラ４
６以降の系内はバブラ４６内にもともと存在したメッキ
液の微細なミストで充満した状態となる。ここでミスト
は微細な、０．１μｍ以下程度のものを含む液滴であ
る。During the vacuum evacuation,
The valves 45 and 49 are gradually opened. Then, argon gas flows from the argon cylinder 33 as bubbles in the plating solution of the bubbler 46, flows into the processing tank 11, and is exhausted by the vacuum pump 55. By this operation bubbler 4
The system after 6 is filled with the fine mist of the plating solution originally present in the bubbler 46. Here, the mist is a fine droplet containing fine particles of about 0.1 μm or less.
【００２４】この状態においては当然のことながら槽１
１内にもメッキ液のミストがアルゴンガス（キャリヤガ
ス）に随伴して流入して充満する（ステップ４）。その
とき半導体ウエハ１００周辺は真空排気されて微細窪み
１０１内も真空排気され且つ十分冷却されているので、
そこにミストが飛来したとき、該ミストは図３（ａ）に
示すように半導体ウエハ１００表面に容易に吸着し、且
つ微細な窪み１０１内部へも容易に侵入してその内面に
吸着することができる。In this state, of course, the tank 1
The mist of the plating solution also flows into and fills 1 along with the argon gas (carrier gas) (step 4). At that time, the periphery of the semiconductor wafer 100 is evacuated, and the inside of the fine recess 101 is also evacuated and sufficiently cooled.
When the mist comes into the mist, the mist can easily adhere to the surface of the semiconductor wafer 100 as shown in FIG. it can.
【００２５】次にバルブ５３を閉じて真空ポンプ５５を
停止し、バルブ４９，４５を閉じてミストの供給を停止
した後、バルブ３７を開いて槽１１内にアルゴンガスを
供給することによって真空破壊すると同時に、冷却手段
１３によって槽１１内を冷却する（ステップ５）。この
真空破壊による圧力上昇と冷却効果によってミストは液
体状態として安定となり、蒸発気化の可能性は大幅に低
減する。言い替えると図３（ｂ）に示すように半導体ウ
エハ１００の表面ばかりかその微細な窪み１０１の内表
面も該液化したミストによって十分濡れた状態となる。Next, the valve 53 is closed to stop the vacuum pump 55, the valves 49 and 45 are closed to stop the supply of mist, and then the valve 37 is opened to supply argon gas into the tank 11 to break the vacuum. At the same time, the inside of the tank 11 is cooled by the cooling means 13 (step 5). The mist becomes stable in a liquid state due to the pressure rise and the cooling effect due to the vacuum breaking, and the possibility of vaporization is greatly reduced. In other words, as shown in FIG. 3B, not only the surface of the semiconductor wafer 100 but also the inner surface of the fine dent 101 is sufficiently wet by the liquefied mist.
【００２６】次にバルブ３７を閉じて液体供給手段７の
バルブ７６，７８を開け、送液ポンプ７３を駆動するこ
とによって、槽１１内にメッキ液を導入・循環し、半導
体ウエハ１００をメッキ液中に浸漬する（ステップ
６）。これによって半導体ウエハ１００の表面はメッキ
液で濡れるが、前述のように微細な窪み１０１内表面は
既に十分濡れた状態となっているので、該微細な窪み１
０１内にもメッキ液が瞬時に充満する。Next, the valve 37 is closed, the valves 76 and 78 of the liquid supply means 7 are opened, and the liquid supply pump 73 is driven to introduce and circulate the plating liquid into the tank 11, so that the semiconductor wafer 100 is plated. Immerse in (Step 6). As a result, the surface of the semiconductor wafer 100 becomes wet with the plating solution. However, as described above, the inner surface of the fine dent 101 is already in a sufficiently wet state.
01 is instantly filled with the plating solution.
【００２７】そして無電解メッキの場合はメッキ液に触
れている半導体ウエハ１００の表面がそのまま銅メッキ
されていく。また電解メッキの場合はメッキ処理槽１内
において半導体ウエハ１００と図示しない銅材の間に電
界を印加することで電解メッキされていく。何れのメッ
キの場合も微細な窪み１０１内にメッキ液が充填されて
いるので、半導体ウエハ１００をメッキ液中に所定時間
保持することで該微細な窪み１０１内も確実に銅メッキ
で埋めることができ、微細で深さの深いプラグ等であっ
てもこれを容易に形成することができる（ステップ
７）。In the case of electroless plating, the surface of the semiconductor wafer 100 that is in contact with the plating solution is directly plated with copper. In the case of electrolytic plating, electrolytic plating is performed by applying an electric field between the semiconductor wafer 100 and a copper material (not shown) in the plating bath 1. In any of the platings, the plating solution is filled in the fine recesses 101. Therefore, by holding the semiconductor wafer 100 in the plating solution for a predetermined time, the fine recesses 101 can be reliably filled with copper plating. It is possible to easily form even a fine and deep plug or the like (step 7).
【００２８】なお電解メッキ用のメッキ液としては、例
えばＣｕＳＯ4・５Ｈ2Ｏと硫酸と添加剤と塩素イオンの
水溶液を用い、無電解メッキ用のメッキ液としては、例
えばＣｕＳＯ4・５Ｈ2ＯとＥＤＴＡ・４Ｎａ（エチレン
ジアミン四酢酸ナトリウム）とＴＭＡＨ（テトラメチル
アンモニウムハイドライドオキサイド）とホルマリンの
水溶液を用いる。As a plating solution for electrolytic plating, for example, an aqueous solution of CuSO 4 .5H 2 O, sulfuric acid, an additive and chlorine ions is used. As a plating solution for electroless plating, for example, CuSO 4 .5H 2 O And an aqueous solution of EDTA.4Na (sodium ethylenediaminetetraacetate), TMAH (tetramethylammonium hydride oxide) and formalin.
【００２９】そしてメッキ液を貯留槽７１に戻した後に
メッキ処理槽１内から半導体ウエハ１００を取り出す
（ステップ８）。After the plating solution is returned to the storage tank 71, the semiconductor wafer 100 is taken out of the plating tank 1 (step 8).
【００３０】なお上記実施形態によってメッキされた半
導体ウエハ１００は、前記図４で説明したように微細窪
み１０１（図４の場合は配線用の溝２０３及びコンタク
トホール２０１）内に埋め込んだメッキを残してそれ以
外の半導体ウエハ１００表面のメッキを化学機械研摩に
よって除去することで配線やプラグが適正に形成され
る。The semiconductor wafer 100 plated according to the above-described embodiment has the plating embedded in the fine recesses 101 (in FIG. 4, the wiring groove 203 and the contact hole 201) as described with reference to FIG. By removing the other plating on the surface of the semiconductor wafer 100 by chemical mechanical polishing, wirings and plugs are properly formed.
【００３１】具体的に言えば図５に示すように、半導体
ウエハ１００を微細窪み１０１を設けた面を下側にして
トップリング３００の下面に保持し、該トップリング３
００を回転しながら別途回転するターンテーブル３５０
上面に貼り付けた研摩クロス３５１に研摩液を供給しな
がら当接して研摩し、これによって該半導体ウエハ１０
０表面のメッキ層を取り除き、微細窪み１０１内に埋め
込んだメッキのみを残して配線やプラグを最終形状に仕
上げる。More specifically, as shown in FIG. 5, the semiconductor wafer 100 is held on the lower surface of the top ring 300 with the surface provided with the fine recesses 101 facing downward, and the top ring 3
Turntable 350 that rotates separately while rotating 00
The polishing cloth 351 affixed to the upper surface is polished while being in contact with the polishing liquid while supplying the polishing liquid.
The plating layer on the surface 0 is removed, and the wiring and plug are finished to the final shape, leaving only the plating embedded in the fine dents 101.
【００３２】以上本発明の実施形態を詳細に説明したが
本発明は上記実施形態に限定されるものではなく例えば
以下のような各種の変形が可能である。 上記実施形態ではミストにする液体としてメッキ液を
用いたが、要は微細な窪み内を濡れさせれば良いので、
例えば純水など、メッキ成膜を阻害しない液なら何でも
良い。Although the embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various modifications such as those described below are possible. In the above embodiment, the plating liquid was used as the liquid for forming the mist. However, since it is only necessary to wet the inside of the fine depression,
For example, any liquid such as pure water that does not hinder plating film formation may be used.
【００３３】上記実施形態では半導体ウエハに銅メッ
キを施す例を示したが、本発明は銅メッキに限られず、
他の種々の材質によるメッキにも利用できる。In the above embodiment, an example in which a semiconductor wafer is plated with copper has been described. However, the present invention is not limited to copper plating.
It can also be used for plating with other various materials.
【００３４】上記実施形態では半導体ウエハにメッキ
を施すために本発明を利用しているが、他の各種基材に
設けた微細な窪みにメッキ液又はそれ以外の所望の液体
を充填するために本発明を用いても良いことは言うまで
もない。In the above embodiment, the present invention is utilized for plating a semiconductor wafer. However, in order to fill a plating solution or other desired liquid into fine depressions provided in various other base materials. It goes without saying that the present invention may be used.
【００３５】上記実施形態では半導体ウエハ全体をミ
ストに触れさせたり、液体（メッキ液）に触れさせたり
したが、本発明は少なくとも基材の微細な窪みを設けた
部分の表面にミストを触れさせたり、液体を触れさせた
りするものであれば良い。In the above embodiment, the entire semiconductor wafer is brought into contact with the mist or with the liquid (plating solution). However, the present invention makes the mist come into contact with at least the surface of the base provided with the fine dents. Or any material that can be touched by a liquid.
【００３６】ミストを生成・供給する装置としては上
記バブラを用いて構成した実施形態に限定されず、他の
種々の構造のミスト供給手段を用いてもよいことはいう
までもない。The apparatus for generating / supplying the mist is not limited to the embodiment using the bubbler, and it goes without saying that mist supply means having other various structures may be used.
【００３７】[0037]
【発明の効果】以上詳細に説明したように本発明によれ
ば、微細な窪みの内部にメッキ液等の各種液体を容易且
つ確実に充填することができるという優れた効果を有す
る。As described above in detail, according to the present invention, there is an excellent effect that various liquids such as a plating solution can be easily and reliably filled in a fine recess.
【図１】本発明を半導体ウエハのメッキ装置に利用した
一実施形態を示す全体概略構成図である。FIG. 1 is an overall schematic diagram showing an embodiment in which the present invention is applied to a semiconductor wafer plating apparatus.
【図２】メッキ装置の操作手順の説明図である。FIG. 2 is an explanatory diagram of an operation procedure of a plating apparatus.
【図３】微細な窪み１０１内の状態変化説明図である。FIG. 3 is an explanatory diagram of a state change in a fine depression 101;
【図４】半導体ウエハ１００表面に配線２１１とプラグ
２１３を化学機械研摩法によって形成する方法を示す図
である。FIG. 4 is a view showing a method of forming a wiring 211 and a plug 213 on the surface of the semiconductor wafer 100 by a chemical mechanical polishing method.
【図５】半導体ウエハ１００を化学機械研摩によって研
摩する方法を示す図である。FIG. 5 is a view showing a method of polishing the semiconductor wafer 100 by chemical mechanical polishing.
１ メッキ処理槽（処理槽） ３ 不活性ガス及びミスト供給手段 ４１ ミスト供給手段 ５ 真空排気手段 ７ 液体供給手段 １３ 冷却手段 １００ 半導体ウエハ（基材） １０１ 微細な窪み DESCRIPTION OF SYMBOLS 1 Plating tank (processing tank) 3 Inert gas and mist supply means 41 Mist supply means 5 Vacuum exhaust means 7 Liquid supply means 13 Cooling means 100 Semiconductor wafer (base material) 101 Fine dent
Claims (5)
の液体を充填する微細窪みへの液充填方法において、 少なくとも前記基材の微細な窪みを設けた部分の表面に
所望のミストを触れさせることによって該微細な窪みの
内面にミストを吸着せしめて濡れた状態とし、 さらに該基材の微細な窪みを設けた部分の表面に所望の
液体を触れさせることによって前記濡れた状態の微細な
窪み内を所望の液体で満たすことを特徴とする微細窪み
への液充填方法。1. A liquid filling method for filling a desired liquid into a fine recess provided on a surface of a base material, wherein a desired mist is applied to at least a surface of a portion of the base material provided with the fine recess. The mist is adsorbed on the inner surface of the fine dent by contacting the substrate to make it wet, and the surface of the base provided with the fine dent is further contacted with a desired liquid to form the wet fine A method for filling a fine dent with a liquid, wherein the inside of the dent is filled with a desired liquid.
法における基材の微細な窪みを設けた部分の表面に触れ
させる液体をメッキ液とすることによって、前記基材表
面をメッキすると同時に微細な窪み内をメッキで埋める
ことを特徴とする微細窪みへのメッキ方法。2. The method according to claim 1, wherein the substrate is plated by using a plating liquid as a liquid to be brought into contact with the surface of a portion of the substrate provided with the fine depression. A plating method for fine pits, characterized by simultaneously filling the inside of the fine pits with plating.
することによって微細な窪み内のメッキを残して基材表
面のメッキを除去することを特徴とする請求項２記載の
微細窪みへのメッキ方法。3. The method according to claim 2, wherein the plating on the surface of the substrate is removed by polishing the surface of the plated substrate by chemical mechanical polishing while leaving the plating in the minute depression. Plating method.
の液体を充填する微細窪みへの液充填装置において、 少なくとも前記基材の微細な窪みを設けた部分の周囲の
空間を覆う処理槽と、 処理槽内に所望のミストを導入して微細な窪み内を濡れ
た状態とせしめるミスト供給手段と、 処理槽内に所望の液体を供給することによって前記基材
の濡れた状態の微細な窪み内を所望の液体で満たす液体
供給手段とを具備することを特徴とする微細窪みへの液
充填装置。4. A liquid filling apparatus for filling a desired liquid into a fine recess provided on a surface of a base material, wherein at least a space surrounding a portion of the base material provided with the fine recess is covered. A tank, mist supply means for introducing a desired mist into the processing tank to make the inside of the fine recess wet, and supplying a desired liquid into the processing tank to form a fine wet-state substrate. A liquid supply means for filling a desired depression with a desired liquid.
処理槽内を冷却する冷却手段と、処理槽内を真空排気す
る真空排気手段とを設けたことを特徴とする請求項４記
載の微細窪みへの液充填装置。5. The apparatus for filling a liquid into the fine depressions further comprises:
5. The liquid filling apparatus according to claim 4, further comprising cooling means for cooling the inside of the processing tank, and vacuum evacuation means for evacuating the inside of the processing tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25282597A JPH1187275A (en) | 1997-09-01 | 1997-09-01 | Method and system for filling fine recess with liquid and plating method for fine recess |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25282597A JPH1187275A (en) | 1997-09-01 | 1997-09-01 | Method and system for filling fine recess with liquid and plating method for fine recess |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1187275A true JPH1187275A (en) | 1999-03-30 |
Family
ID=17242739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25282597A Pending JPH1187275A (en) | 1997-09-01 | 1997-09-01 | Method and system for filling fine recess with liquid and plating method for fine recess |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1187275A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007100113A (en) * | 2005-09-30 | 2007-04-19 | Meiko:Kk | Copper plating method and apparatus for electrolytically removing chlorine ion, which is used in the method |
-
1997
- 1997-09-01 JP JP25282597A patent/JPH1187275A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007100113A (en) * | 2005-09-30 | 2007-04-19 | Meiko:Kk | Copper plating method and apparatus for electrolytically removing chlorine ion, which is used in the method |
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