JPH1192954A - Method for packing microrecesses and apparatus therefor - Google Patents
Method for packing microrecesses and apparatus thereforInfo
- Publication number
- JPH1192954A JPH1192954A JP26930897A JP26930897A JPH1192954A JP H1192954 A JPH1192954 A JP H1192954A JP 26930897 A JP26930897 A JP 26930897A JP 26930897 A JP26930897 A JP 26930897A JP H1192954 A JPH1192954 A JP H1192954A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plating solution
- liquid
- fine
- viscosity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、微細窪みの充填方
法及び装置に係り、特に半導体素子の配線用溝等の微細
窪みに銅（Ｃｕ）等の金属を充填するための充填方法及
び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for filling a fine dent, and more particularly to a method and an apparatus for filling a fine dent such as a wiring groove of a semiconductor element with a metal such as copper (Cu). .
【０００２】[0002]
【従来の技術】従来、半導体素子の導電線路としての配
線パターンを形成するための配線材料として、アルミニ
ウム（Ａｌ）又はアルミニウム合金が用いられている。
しかしながら、半導体素子の配線工程においては集積度
を更に増大させたいという要求からアルミニウム又はア
ルミニウム合金に替わる低電気抵抗材料による微細パタ
ーン形成技術の確立が切望されている。2. Description of the Related Art Conventionally, aluminum (Al) or an aluminum alloy has been used as a wiring material for forming a wiring pattern as a conductive line of a semiconductor element.
However, in a wiring process of a semiconductor element, there is a strong demand for establishment of a fine pattern forming technique using a low electric resistance material instead of aluminum or an aluminum alloy due to a demand for further increasing the degree of integration.
【０００３】これは、集積度が高くなるにつれて、電流
密度が増加するため温度上昇とそれに伴って生じる熱応
力が共に無視できない程度に高まる結果、従来のＡｌ又
はＡｌ合金ではストレスマイグレーションやエレクトロ
マイグレーションによる断線の恐れが増すことに大きく
起因している。これを避けるため、Ａｌ又はＡｌ合金へ
のＣｕの添加や高融点金属との積層化が行われつつある
が万全ではない。[0003] This is because, as the degree of integration increases, the current density increases, so that the temperature rise and the resulting thermal stress both increase to a nonnegligible level. As a result, in conventional Al or Al alloys, stress migration or electromigration occurs. This is largely due to the increased risk of disconnection. In order to avoid this, addition of Cu to Al or Al alloy and lamination with a high melting point metal are being performed, but this is not perfect.
【０００４】そこで、通電による過度の発熱を避けるた
め、従来のＡｌ又はＡｌ合金とは根本的に異なる導電性
のよい材料を配線形成に採用することが必然的に要求さ
れている。現用材料のうち、Ａｌ系よりも電気比抵抗の
小さい材料としては、銅（Ｃｕ）と銀（Ａｇ）がある。
このうち、銀は高価であり、又、強度および耐食性が低
く、構成原子が拡散しやすいという欠点がある。したが
って、銅及び銅合金が配線材料としては最適である。[0004] Therefore, in order to avoid excessive heat generation due to energization, it is inevitably required to employ a material having good conductivity, which is fundamentally different from conventional Al or Al alloy, for forming the wiring. Among the current materials, copper (Cu) and silver (Ag) are materials having lower electric resistivity than Al-based materials.
Among them, silver is expensive, has low strength and low corrosion resistance, and has the disadvantage that constituent atoms are easily diffused. Therefore, copper and copper alloy are most suitable as wiring materials.
【０００５】従来、配線パターンを形成するためには、
スパッタリング成膜とケミカルドライエッチングを組合
わせて用いる方法がとられてきたが、スパッタリング成
膜ではアスペクト比（深さと直径又は幅の比）の高い配
線用の溝又は穴への金属の充填又は埋め込みが困難であ
り、又、銅又は銅合金に対してはケミカルドライエッチ
ングが技術的に確立されていないという問題点があっ
た。Conventionally, to form a wiring pattern,
A method using a combination of sputtering film formation and chemical dry etching has been used, but in sputtering film formation, metal is filled or buried in a wiring groove or hole having a high aspect ratio (ratio of depth to diameter or width). In addition, there has been a problem that chemical dry etching has not been technically established for copper or copper alloy.
【０００６】また、微細な配線用の溝への埋め込み手段
として、ＣＶＤ法があるが、堆積膜中への有機原料から
の炭素（Ｃ）の混入が避けられないという問題点があっ
た。Further, there is a CVD method as a means for embedding in a fine wiring groove. However, there is a problem that incorporation of carbon (C) from an organic raw material into a deposited film is unavoidable.
【０００７】[0007]
【発明が解決しようとする課題】すなわち、従来のいず
れの方法を用いても、アスペクト比の高い微細な配線用
の溝や穴等にＣｕ又はＣｕ合金等の電気比抵抗の小さい
材料を充填することができないという問題点があった。That is, in any of the conventional methods, a material having a small electric resistivity such as Cu or a Cu alloy is filled in a fine wiring groove or hole having a high aspect ratio. There was a problem that it was not possible.
【０００８】本発明は上述の事情に鑑みなされたもの
で、充填材料として銅又は銅合金等の電気比抵抗の小さ
い材料を用いることができ、かつ微細な配線用の溝等の
微細窪みに銅又は銅合金等の電気比抵抗の小さい材料を
充填することができる液相メッキ工程等の液相工程によ
る微細窪みの充填方法及び装置を提供することを目的と
する。The present invention has been made in view of the above circumstances, and it is possible to use a material having a low electric resistivity such as copper or a copper alloy as a filling material, and to insert copper into a fine depression such as a fine wiring groove. Another object of the present invention is to provide a method and an apparatus for filling fine pits by a liquid phase process such as a liquid phase plating process, which can fill a material having a small electric resistivity such as a copper alloy.
【０００９】[0009]
【課題を解決するための手段】上述した目的を達成する
ため、本発明の充填方法は、微細窪みを有する基材をメ
ッキ液に浸漬し、前記メッキ液の粘性調整を行った後、
メッキ槽内の上部空間を真空排気してメッキ液の脱気を
行い、前記微細窪みへの所定材料の充填を行うことを特
徴とするものである。In order to achieve the above-mentioned object, a filling method of the present invention comprises immersing a substrate having fine depressions in a plating solution, adjusting the viscosity of the plating solution,
The upper space in the plating tank is evacuated to degas the plating solution, and the minute recess is filled with a predetermined material.
【００１０】また、本発明の充填装置は、微細窪みを有
する基材を浸漬するメッキ液を保持したメッキ槽と、該
メッキ槽内の上部空間を真空排気する手段と、前記メッ
キ液の粘性を調整する手段とを備えたことを特徴とする
ものである。Further, the filling apparatus of the present invention comprises a plating tank holding a plating solution for immersing a substrate having fine depressions, means for evacuating an upper space in the plating tank, and a method for reducing the viscosity of the plating solution. Adjustment means.
【００１１】本発明によれば、メッキ液を真空にさらす
ことにより、微細窪み内の気体を脱気することができ、
メッキ液の窪み内部への浸入が活発になる結果、微細窪
みへの所定の金属の充填が実現できる。According to the present invention, by exposing the plating solution to a vacuum, the gas in the fine depression can be degassed,
As a result of active penetration of the plating solution into the inside of the depression, filling of the fine depression with a predetermined metal can be realized.
【００１２】[0012]
【発明の実施の形態】以下、本発明に係る微細窪みの充
填方法及び装置の実施の一形態を図１乃至図３を参照し
て説明する。図１は微細窪みの充填方法によって製造さ
れる半導体素子の製造工程を示す説明図である。図１
（ａ）に示すように、半導体素子が形成された半導体基
材１上の導電層１ａの上にＳｉＯ2からなる絶縁膜２を
堆積させた後、リソグラフィ・エッチング技術によりコ
ンタクトホール３と配線用の溝４を形成する。そして、
ＴｉＮ等からなるバリア層５を形成する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a method and an apparatus for filling a fine dent according to the present invention will be described below with reference to FIGS. FIG. 1 is an explanatory view showing a manufacturing process of a semiconductor device manufactured by a method for filling a fine recess. FIG.
As shown in (a), after depositing the insulating film 2 made of SiO 2 on a conductive layer 1a on a semiconductor substrate 1 on which semiconductor devices are formed, wiring contact hole 3 by a lithographic etching technique Is formed. And
A barrier layer 5 made of TiN or the like is formed.
【００１３】次に、本発明に係る液相メッキ工程によ
り、図１（ｂ）に示すように半導体基板１のコンタクト
ホール３および溝４にＣｕを充填するとともに絶縁膜２
上にＣｕ層６を堆積させる。その後、化学的機械的研磨
（ＣＭＰ）により、絶縁膜２上のＣｕ層を除去してコン
タクトホール３および配線用の溝４に充填されたＣｕ層
６の表面と絶縁膜２の表面とをほぼ同一平面にする。こ
れにより、図１（ｃ）に示すようにＣｕ層６からなる配
線が形成される。Next, in the liquid phase plating process according to the present invention, as shown in FIG. 1B, the contact holes 3 and the grooves 4 of the semiconductor substrate 1 are filled with Cu and the insulating film 2 is formed.
A Cu layer 6 is deposited thereon. Thereafter, the Cu layer on the insulating film 2 is removed by chemical mechanical polishing (CMP), so that the surface of the Cu layer 6 filled in the contact hole 3 and the trench 4 for wiring and the surface of the insulating film 2 are almost completely removed. Make them coplanar. As a result, a wiring made of the Cu layer 6 is formed as shown in FIG.
【００１４】図２は本発明の液相メッキ工程を実施する
装置の構成の一実施例を示す概略図である。図２に示す
ように、メッキ液Ｌを保持したメッキ槽１０は真空ポン
プ１１に接続されており、メッキ槽１０内の上部空間Ｒ
が真空排気されるようになっている。メッキ槽１０内の
メッキ液は、貯溜槽１２、ポンプ１３およびフィルタ１
４を介して循環するようになっている。またメッキ槽１
０内には、メッキ槽１０内のメッキ液の温度を調節する
ための温調器１５と、メッキ液を攪拌するための攪拌器
１６とが設置されている。攪拌器１６はメッキ液の粘性
を調整する手段を構成している。FIG. 2 is a schematic view showing one embodiment of the structure of an apparatus for performing the liquid phase plating step of the present invention. As shown in FIG. 2, the plating tank 10 holding the plating solution L is connected to a vacuum pump 11, and an upper space R in the plating tank 10 is provided.
Is evacuated. The plating solution in the plating tank 10 is stored in the storage tank 12, the pump 13, and the filter 1.
4 for circulation. Plating tank 1
Inside 0, a temperature controller 15 for adjusting the temperature of the plating solution in the plating tank 10 and a stirrer 16 for stirring the plating solution are provided. The stirrer 16 constitutes means for adjusting the viscosity of the plating solution.
【００１５】前記メッキ槽１０内には、基材表面が水平
な状態で半導体基材１が設置されている。この場合、充
填すべき微細窪みであるコンタクトホール３および溝４
の深さ方向は、垂直方向に位置している。メッキ槽１０
内に保持されたメッキ液Ｌの組成は表１に示される。The semiconductor substrate 1 is placed in the plating tank 10 with the substrate surface being horizontal. In this case, the contact holes 3 and the grooves 4 which are the fine depressions to be filled.
Is located in the vertical direction. Plating tank 10
Table 1 shows the composition of the plating solution L held therein.
【表１】 またメッキ条件は表２に示される。[Table 1] Table 2 shows the plating conditions.
【表２】 表１及び２は電解メッキと無電解メッキの場合の両方を
示している。[Table 2] Tables 1 and 2 show both the cases of electrolytic plating and electroless plating.
【００１６】表１に示すメッキ液に、酸化アルミニウム
のゾルに適量の塩化ナトリウムを添加したものを混合し
ておく。酸化アルミニウムのゾルおよび塩化ナトリウム
からなる添加剤は、メッキ液の粘性を変化させるために
メッキ液に混合するものである。上記添加剤は、液体を
静止状態又は流動状態にさせ、ゾル状態とゲル状態との
２態様をとることにより粘性が変化する性質を有してい
る。A plating solution shown in Table 1 is mixed with a sol of aluminum oxide to which an appropriate amount of sodium chloride has been added. The additive consisting of aluminum oxide sol and sodium chloride is mixed with the plating solution to change the viscosity of the plating solution. The additive has a property that the viscosity is changed by bringing the liquid into a stationary state or a flowing state and taking two modes of a sol state and a gel state.
【００１７】次に、図２の装置を用いて半導体基材１の
微細窪みに銅を充填する工程を図３を参照して説明す
る。ステップ１（Ｓ１）において、半導体基材１をメッ
キ液中に浸漬する。このとき、メッキ液は低粘性液であ
る。次に、ステップ２（Ｓ２）において、メッキ液を所
定時間静置する。これによって、酸化アルミニウムと塩
化ナトリウムとが添加されているメッキ液は高粘性液に
変化する。Next, a process of filling the fine recesses of the semiconductor substrate 1 with copper using the apparatus of FIG. 2 will be described with reference to FIG. In step 1 (S1), the semiconductor substrate 1 is immersed in a plating solution. At this time, the plating solution is a low viscosity solution. Next, in step 2 (S2), the plating solution is allowed to stand for a predetermined time. As a result, the plating solution to which aluminum oxide and sodium chloride are added changes to a highly viscous solution.
【００１８】次に、ステップ３（Ｓ３）において、真空
ポンプ１１を稼働させて、メッキ液の上部空間Ｒを所定
の真空圧（０．００１〜６８０Ｔｏｒｒ（０Ｔｏｒｒを
完全な真空とした場合））とすることにより、メッキ液
を真空にさらし、メッキ液中に溶解している気体を脱気
する。このとき、メッキ液は高粘性液となっているた
め、メッキ液が真空にさらされてもメッキ液自体が沸騰
することによる不都合はない。メッキ液中に溶解してい
る気体が脱気されるのに伴い、半導体基材１上の微細窪
み内の空気も脱気され、微細窪み内にメッキ液が浸入し
ていく。即ち、真空時の脱気作用によって、微細窪みで
あるコンタクトホール３および溝４内へのメッキ液の浸
入が徐々に実現する。Next, in Step 3 (S3), the vacuum pump 11 is operated to evacuate the upper space R of the plating solution to a predetermined vacuum pressure (0.001 to 680 Torr (when 0 Torr is set to a complete vacuum)). As a result, the plating solution is exposed to a vacuum, and the gas dissolved in the plating solution is degassed. At this time, since the plating solution is a highly viscous solution, even if the plating solution is exposed to a vacuum, there is no inconvenience caused by the plating solution itself boiling. As the gas dissolved in the plating solution is degassed, the air in the fine depression on the semiconductor substrate 1 is also degassed, and the plating solution infiltrates into the fine depression. In other words, the plating solution gradually infiltrates into the contact holes 3 and the grooves 4 which are fine pits due to the deaeration effect in a vacuum.
【００１９】次に、ステップ４（Ｓ４）において、真空
ポンプ１１を停止させるとともにメッキ槽１０の上部空
間Ｒの真空破壊を行なって大気圧とし、ステップ５（Ｓ
５）において、撹拌器１６を作動させてメッキ液を撹拌
する。これによって酸化アルミニウムと塩化ナトリウム
とが添加されている液は低粘性液に変化する。次に、ス
テップ６（Ｓ６）において、半導体基板１に対する所定
時間のメッキを実行する。本実施例によれば、真空脱気
により、微細窪み内の空気をメッキ液と置換することが
できるため、該微細窪み内表面をメッキ液で十分濡らす
ことができ、その結果、アスペクト比の高い微細窪みで
あるコンタクトホール３および溝４内に銅を充填でき
る。Next, in step 4 (S4), the vacuum pump 11 is stopped, and the upper space R of the plating tank 10 is evacuated to a vacuum to make it atmospheric pressure.
In 5), the stirrer 16 is operated to stir the plating solution. Thereby, the liquid to which aluminum oxide and sodium chloride are added changes to a low-viscosity liquid. Next, in step 6 (S6), plating is performed on the semiconductor substrate 1 for a predetermined time. According to the present embodiment, the air in the fine recess can be replaced with the plating solution by vacuum degassing, so that the inner surface of the fine recess can be sufficiently wetted with the plating solution, and as a result, the aspect ratio is high. Copper can be filled in the contact holes 3 and the trenches 4 which are fine depressions.
【００２０】図３に示す液層メッキ工程においては、メ
ッキ液の粘性を変化させるために、いわゆるチキソトロ
ピーを利用したが、メッキ液中に特定波長の光の照射あ
るいは、外部電界の印加等によって粘性が変化する物質
を添加しておき、光の照射および照射停止、又は、外部
電界の有無によりメッキ液の粘性を変化させることもで
きる。In the liquid layer plating process shown in FIG. 3, so-called thixotropic is used to change the viscosity of the plating solution. However, the viscosity is increased by irradiating the plating solution with light of a specific wavelength or applying an external electric field. The viscosity of the plating solution can be changed by irradiating and stopping light irradiation or by the presence or absence of an external electric field.
【００２１】また、メッキ液の粘性を変化させる工程を
経ることなく真空脱気工程のみで本発明の充填方法を実
施することも可能である。この場合には、図３におい
て、ステップ１およびステップ２は省略し、ステップ３
〜５のみで液相メッキ工程が完了する。It is also possible to carry out the filling method of the present invention only by the vacuum degassing step without going through the step of changing the viscosity of the plating solution. In this case, Step 1 and Step 2 are omitted in FIG.
The liquid phase plating step is completed only with the steps 5 to 5.
【００２２】本実施例の説明においては、微細窪みに銅
を充填する場合を説明したが、本発明を適用することに
より、微細窪みに銀（Ａｇ）や金（Ａｕ）等の他の電気
比抵抗の小さい材料を充填することもできる。また実施
例では、無電解メッキ及び電解メッキの場合を説明した
が、本発明は、ドブ付けメッキ、溶融塩メッキ、化成
法、ゾルゲル法、析出法（ＬＰＤ）等の液体を用いる充
填法には全て適用することができる。また半導体基板以
外であっても微細な窪みをもつ基材ならばどんなもので
も本発明による材料充填が可能とある。In the description of the present embodiment, the case where copper is filled in the fine pits has been described. However, by applying the present invention, the fine pits may be filled with another electric ratio such as silver (Ag) or gold (Au). A material having a low resistance can also be filled. In the examples, the cases of electroless plating and electrolytic plating have been described. However, the present invention relates to a filling method using a liquid such as dough plating, molten salt plating, a chemical conversion method, a sol-gel method, and a deposition method (LPD). All can be applied. In addition, any material other than a semiconductor substrate can be filled with the material according to the present invention, as long as it has a fine recess.
【００２３】[0023]
【発明の効果】以上説明したように、本発明によれば、
液相メッキ工程等の液相を利用した材料の充填工程中
に、系内を真空脱気することにより、基材上の微細窪み
にＣｕ等の電気比抵抗の小さい材料を空洞（ボイド）を
形成することなく充填することができる。As described above, according to the present invention,
During the material filling step using the liquid phase such as the liquid phase plating step, the inside of the system is evacuated to a vacuum so that a material having a small electrical resistivity such as Cu is formed in a micro dent on the substrate. It can be filled without forming.
【図１】本発明に係る微細窪みの充填方法によって製造
される半導体素子の製造工程を示す説明図である。FIG. 1 is an explanatory view showing a manufacturing process of a semiconductor device manufactured by a method for filling a fine dent according to the present invention.
【図２】本発明の液相メッキ工程を実施する装置の構成
を示す概略図である。FIG. 2 is a schematic view showing a configuration of an apparatus for performing a liquid phase plating step of the present invention.
【図３】本発明の液相メッキ工程を示す工程図である。FIG. 3 is a process chart showing a liquid phase plating process of the present invention.
１ 半導体基材 ２ 絶縁膜 ３ コンタクトホール ４ 溝 ５ バリア層 ６ Ｃｕ層 １０ メッキ槽 １１ 真空ポンプ １２ 貯溜槽 １３ ポンプ １４ フィルタ １５ 温調器 １６ 攪拌器 DESCRIPTION OF SYMBOLS 1 Semiconductor base material 2 Insulating film 3 Contact hole 4 Groove 5 Barrier layer 6 Cu layer 10 Plating tank 11 Vacuum pump 12 Storage tank 13 Pump 14 Filter 15 Temperature controller 16 Stirrer
Claims (7)
し、前記メッキ液の粘性調整を行った後、メッキ槽内の
上部空間を真空排気してメッキ液の脱気を行い、前記微
細窪みへの所定材料の充填を行うことを特徴とする微細
窪みの充填方法。1. A substrate having fine depressions is immersed in a plating solution, the viscosity of the plating solution is adjusted, and the upper space in the plating tank is evacuated to degas the plating solution. A method for filling a fine dent, wherein the dent is filled with a predetermined material.
に添加された添加剤の性状変化を利用して行うことを特
徴とする請求項１記載の微細窪みの充填方法。2. The method according to claim 1, wherein the adjustment of the viscosity of the plating solution is performed by utilizing a property change of an additive added to the plating solution.
的機械的研磨（ＣＭＰ）により充填された材料の表面を
平坦化することを特徴とする請求項１又は２記載の微細
窪みの充填方法。3. The method according to claim 1, wherein after filling the material into the fine recess, the surface of the filled material is flattened by chemical mechanical polishing (CMP). Method.
し、メッキ槽内の上部空間を真空排気してメッキ液の脱
気を行い、前記微細窪みへの所定材料の充填を行うこと
を特徴とする微細窪みの充填方法。4. A method of immersing a substrate having fine depressions in a plating solution, evacuating an upper space in the plating tank to degas the plating solution, and filling the fine depressions with a predetermined material. Characteristic method of filling fine pits.
し、メッキ槽内の上部空間を真空排気してメッキ液の脱
気を行い、前記微細窪みへのメッキ液の浸入を促進する
ことを特徴とする微細窪みへのメッキ液の浸入方法。5. A method of immersing a base material having a fine pit in a plating solution, evacuating an upper space in a plating tank to degas the plating solution, and thereby facilitating penetration of the plating solution into the fine dent. A method for infiltrating a plating solution into a fine depression.
液を保持したメッキ槽と、該メッキ槽内の上部空間を真
空排気する手段と、前記メッキ液の粘性を調整する手段
とを備えたことを特徴とする微細窪みの充填装置。6. A plating tank for holding a plating solution for immersing a substrate having fine recesses, means for evacuating an upper space in the plating tank, and means for adjusting the viscosity of the plating solution. A filling device for a fine depression.
前記メッキ液中に添加された添加剤に流動状態を付与す
る攪拌器であることを特徴とする請求項６記載の微細窪
みの充填装置。7. A means for adjusting the viscosity of the plating solution,
7. The filling device according to claim 6, wherein the stirring device is a stirrer for imparting a fluid state to the additive added to the plating solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26930897A JPH1192954A (en) | 1997-09-16 | 1997-09-16 | Method for packing microrecesses and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26930897A JPH1192954A (en) | 1997-09-16 | 1997-09-16 | Method for packing microrecesses and apparatus therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1192954A true JPH1192954A (en) | 1999-04-06 |
Family
ID=17470539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26930897A Pending JPH1192954A (en) | 1997-09-16 | 1997-09-16 | Method for packing microrecesses and apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1192954A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005048209A (en) * | 2003-07-30 | 2005-02-24 | Hitachi Ltd | Electroless plating method, electroless plating device, method of fabricating semiconductor device, and fabrication device therefor |
| JP2006249530A (en) * | 2005-03-11 | 2006-09-21 | Fujitsu Ltd | Method for forming pattern made of metallic film |
| JP2008308713A (en) * | 2007-06-13 | 2008-12-25 | Nikko Kinzoku Kk | Electroless copper-plating solution, method for forming damascene wiring of copper, and semiconductor wafer having damascene wiring of copper formed therein by using the method |
| JP2010535939A (en) * | 2007-08-06 | 2010-11-25 | カトリーケ・ウニベルシタイト・リユーベン | Deposition from ionic liquid |
-
1997
- 1997-09-16 JP JP26930897A patent/JPH1192954A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005048209A (en) * | 2003-07-30 | 2005-02-24 | Hitachi Ltd | Electroless plating method, electroless plating device, method of fabricating semiconductor device, and fabrication device therefor |
| JP2006249530A (en) * | 2005-03-11 | 2006-09-21 | Fujitsu Ltd | Method for forming pattern made of metallic film |
| JP2008308713A (en) * | 2007-06-13 | 2008-12-25 | Nikko Kinzoku Kk | Electroless copper-plating solution, method for forming damascene wiring of copper, and semiconductor wafer having damascene wiring of copper formed therein by using the method |
| JP2010535939A (en) * | 2007-08-06 | 2010-11-25 | カトリーケ・ウニベルシタイト・リユーベン | Deposition from ionic liquid |
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