JPH1174619A - Package for housing optical semiconductor element - Google Patents
Package for housing optical semiconductor elementInfo
- Publication number
- JPH1174619A JPH1174619A JP9233558A JP23355897A JPH1174619A JP H1174619 A JPH1174619 A JP H1174619A JP 9233558 A JP9233558 A JP 9233558A JP 23355897 A JP23355897 A JP 23355897A JP H1174619 A JPH1174619 A JP H1174619A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor element
- metal
- optical fiber
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光半導体素子を収
容するための光半導体素子収納用パッケージに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.
【０００２】[0002]
【従来の技術】従来、光半導体素子を収容するための光
半導体素子収納用パッケージは、銅−タングステン合金
から成り、上面の中央領域に光半導体素子が載置される
光半導体素子載置部を有する金属基体と、鉄−ニッケル
−コバルト合金から成り、光半導体素子載置部を囲繞す
るよう金属基体上に銀ロウ等のロウ材を介して取着さ
れ、側部に光ファイバを固定するための光ファイバ固定
部材と、外部リード端子がロウ付けされたメタライズ配
線層を有するアルミナセラミックスから成る絶縁端子部
材とが取着された金属枠体と、金属枠体の上部に取着さ
れ、光半導体素子を気密に封止する金属蓋体とから構成
されており、金属基体の光半導体素子載置都に光半導体
素子を接着固定するとともに光半導体素子の各電極をボ
ンディングワイヤを介して外部リード端子が取着されて
いるメタライズ配線層に接続し、次に金属枠体の上部に
金属蓋体を取着させ、金属基体と金属枠体と金属蓋体と
から成る容器内部に光半導体素子を収容し、最後に金属
枠体の光ファイバ固定部材に光ファイバをレーザ光線の
照射による溶接等によって接合させ、光ファイバを金属
枠体に固定することによって製品としての光半導体装置
となる。2. Description of the Related Art Conventionally, an optical semiconductor element housing package for housing an optical semiconductor element is made of a copper-tungsten alloy, and has an optical semiconductor element mounting portion on which an optical semiconductor element is mounted in a central region on an upper surface. A metal base having an iron-nickel-cobalt alloy, attached to the metal base via a brazing material such as silver brazing so as to surround the optical semiconductor element mounting portion, and fixing an optical fiber to a side portion. A metal frame having an optical fiber fixing member attached thereto and an insulating terminal member made of alumina ceramics having a metallized wiring layer to which external lead terminals are brazed, and an optical semiconductor mounted on the metal frame. And a metal lid for hermetically sealing the element. The optical semiconductor element is bonded and fixed to the optical semiconductor element mounting portion of the metal substrate, and each electrode of the optical semiconductor element is bonded with a bonding wire. Connected to the metallized wiring layer to which the external lead terminals are attached, and then attach a metal lid to the top of the metal frame, inside the container consisting of the metal base, metal frame, and metal lid. The optical semiconductor element is housed, and finally, the optical fiber is joined to the optical fiber fixing member of the metal frame by welding or the like by irradiating a laser beam, and the optical fiber is fixed to the metal frame to produce an optical semiconductor device as a product. Become.
【０００３】かかる光半導体装置は、外部電気回路から
供給される電気信号によって光半導体素子に光を励起さ
せ、この光を光ファイバを介して外部に伝達することに
よって高速光通信等に使用される光半導体装置として機
能する。Such an optical semiconductor device is used for high-speed optical communication or the like by exciting light to an optical semiconductor element by an electric signal supplied from an external electric circuit and transmitting the light to the outside via an optical fiber. Functions as an optical semiconductor device.
【０００４】またこの光半導体装置には金属基体の両端
領域に金属枠体から突出するようにしてネジ止め部が形
成されており、このネジ止め部を外部部材にネジ止めす
ることによって外部部材に固定されることとなる。In this optical semiconductor device, screwed portions are formed at both end regions of the metal base so as to protrude from the metal frame, and the screwed portions are screwed to an external member so as to be attached to the external member. It will be fixed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この従
来の光半導体素子収納用パッケージは、金属基体を構成
する銅−タングステン合金の熱膨張係数が7.0 ×10-6／
℃（室温〜800 ℃）であり、金属枠体を構成する鉄−ニ
ッケル−コバルト合金の熱膨張係数（10×10-6／℃：室
温〜800 ℃）と相違することから、金属基体上に金属枠
体を銀ロウ等のロウ材を介してロウ付けすると、両者の
熱膨張係数の相違に起因する熱応力によって金属基体に
10〜20μｍ程度の反りが発生したものとなっていた。However, in this conventional package for housing an optical semiconductor element, the copper-tungsten alloy constituting the metal substrate has a thermal expansion coefficient of 7.0 × 10 -6 /
° C (room temperature to 800 ° C), which is different from the coefficient of thermal expansion of the iron-nickel-cobalt alloy constituting the metal frame (10 × 10 -6 / ° C: room temperature to 800 ° C). When the metal frame is brazed through a brazing material such as silver brazing, thermal stress caused by the difference in the coefficient of thermal expansion between the two causes the metal frame to adhere to the metal base.
Warpage of about 10 to 20 μm was generated.
【０００６】そのため、この光半導体素子収納用パッケ
ージに光半導体素子を収容し、光半導体装置となした
後、金属基体の両端領域に形成したネジ止め部を外部部
材に強固にネジ止めして光半導体装置を外部部材に固定
した場合、金属基体を外部部材にネジ止めする際の締め
付け力により金属基体の反りが矯正され、その結果、金
属基体の中央領域の高さが変わるとともにここに載置さ
れた光半導体素子の固定高さが変わり、光半導体素子と
光ファイバとの位置整合が崩れ、光半導体素子が励起し
た光を光ファイバを介して外部に良好に伝達することが
できなくなってしまうという欠点を有していた。For this reason, after the optical semiconductor element is accommodated in the optical semiconductor element accommodating package to form an optical semiconductor device, the screw portions formed at both end regions of the metal base are firmly screwed to the external member, and the optical semiconductor device is mounted. When the semiconductor device is fixed to an external member, the warpage of the metal substrate is corrected by a tightening force when the metal substrate is screwed to the external member. As a result, the height of the central region of the metal substrate changes and the metal substrate is placed here. The fixed height of the optical semiconductor element changed, the alignment of the optical semiconductor element and the optical fiber is broken, and the light excited by the optical semiconductor element cannot be transmitted to the outside via the optical fiber. Had the disadvantage that
【０００７】そこで、本願出顔人は、特願平５−103114
号において、金属基体の中央領域の厚みをＸ、両端領域
の厚みをＴとしたとき、1.0 ≧Ｔ≧0.3 （ｍｍ）、Ｘ≧
２Ｔを満足する光半導体素子収納用パッケージを提案し
た。[0007] Therefore, the person presenting the present application is disclosed in Japanese Patent Application No. 5-103114.
In the above, when the thickness of the central region of the metal base is X and the thickness of both end regions is T, 1.0 ≧ T ≧ 0.3 (mm), X ≧
We have proposed an optical semiconductor element storage package that satisfies 2T.
【０００８】この光半導体素子収納用パッケージによれ
ば、金属基体の中央領域に光半導体素子を接着固定する
とともに両端領域のネジ止め部を外部部材に固定した場
合、金属基体の反り矯正に伴う応力は、金属基体の両端
領域を変形させることによって吸収され、中央領域には
伝達されず、その結果、金属基体の中央領域に接着固定
されている光半導体素子はその固定位置が常に一定とな
り、光半導体素子と光ファイバとの整合を正確なものと
して光半導体素子が励起した光を光ファイバを介して外
部に良好に伝達することが可能となる。According to this package for housing an optical semiconductor element, when the optical semiconductor element is bonded and fixed to the central area of the metal base and the screwed portions at both end areas are fixed to the external member, the stress accompanying the warp correction of the metal base is obtained. Is absorbed by deforming both end regions of the metal base, and is not transmitted to the center region. As a result, the optical semiconductor element bonded and fixed to the center region of the metal base has the fixed position always fixed, and The light excited by the optical semiconductor element can be transmitted to the outside via the optical fiber satisfactorily by making the matching between the semiconductor element and the optical fiber accurate.
【０００９】しかしながら、この光半導体素子収納用パ
ッケージによれば、金属基体を構成する銅−タングステ
ン合金が、ヤング率30000 ｋｇｆ／ｍｍ2 と大きく、か
つ降伏応力が70ｋｇｆ／ｍｍ2 と大きいことから、変形
しにくく脆い性質を有しているため、金属基体の両端領
域の厚みを0.3 ｍｍ未満とすると、金属基体の機械的強
度が低下して光半導体装置を外部部材に強固に取り付け
固定することができなくなってしまうこと、および中央
領域の厚みが両端領域の厚みの２倍未満となるとネジ止
めする時の応力が中央領域にも伝わって光半導体素子と
光ファイバとの整合がとれなくなってしまうこと等か
ら、中央領域の厚みを例えば0.6 ｍｍ未満の薄いものと
することによって光半導体装置の更なる薄型化を図るこ
とが困難であるという欠点を有していた。However, according to the package for housing an optical semiconductor element, the copper-tungsten alloy constituting the metal substrate has a large Young's modulus of 30,000 kgf / mm 2 and a large yield stress of 70 kgf / mm 2 . When the thickness of both end regions of the metal base is less than 0.3 mm, the mechanical strength of the metal base is reduced and the optical semiconductor device can be firmly attached and fixed to an external member because the metal base has a brittle property. If the thickness of the central region is less than twice the thickness of both end regions, the stress at the time of screwing is transmitted to the central region and the optical semiconductor element and the optical fiber cannot be aligned. Therefore, it is difficult to further reduce the thickness of the optical semiconductor device by making the thickness of the central region thinner, for example, less than 0.6 mm. It had.
【００１０】本発明は上記事情に鑑みて案出されたもの
であり、その目的は、ネジ止めの応力によって光半導体
素子の固定高さが変わることがなく、光半導体素子と光
ファイバとの位置整合が保たれて光半導体素子が励起し
た光を外部に良好に伝達することができ、しかも薄型の
光半導体装置とできる光半導体素子収納用パッケージを
提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to prevent the fixing height of an optical semiconductor device from being changed by the stress of screwing, and to position the optical semiconductor device and the optical fiber. It is an object of the present invention to provide an optical semiconductor element housing package that can maintain good alignment and transmit the light excited by the optical semiconductor element to the outside, and can be a thin optical semiconductor device.
【００１１】[0011]
【課題を解決するための手段】本発明の光半導体素子収
納用パッケージは、銅−タングステン合金から成り、上
面の中央領域に光半導体素子が載置される光半導体素子
載置部を有する金属基体と、この金属基体上に前記光半
導体素子載置部を囲繞するように取着され、側部に光フ
ァイバを固定するための光ファイバ固定部材を有する金
属枠体と、前記金属基体の両端領域に前記金属枠体から
突出するように接合されたヤング率が20000 ｋｇｆ／ｍ
ｍ2 以下で降伏応力が50ｋｇｆ／ｍｍ2 以下の金属材料
から成るネジ止め部材と、前記金属枠体の上面に取着さ
れ、光半導体素子を気密に封止する金属蓋体とから成る
ことを特徴とするものである。A package for storing an optical semiconductor element according to the present invention is made of a copper-tungsten alloy, and has a metal substrate having an optical semiconductor element mounting portion on which an optical semiconductor element is mounted in a central region of an upper surface. And a metal frame attached to the metal substrate so as to surround the optical semiconductor element mounting portion and having an optical fiber fixing member for fixing an optical fiber to a side portion, and both end regions of the metal substrate. Has a Young's modulus of 20,000 kgf / m joined so as to protrude from the metal frame.
a screw member made of a metal material having a yield stress of 50 kgf / mm 2 or less at m 2 or less, and a metal lid attached to the upper surface of the metal frame and hermetically sealing the optical semiconductor element. It is a feature.
【００１２】本発明の光半導体素子収納用パッケージに
よれば、銅−タングステン合金から成る金属基体の両端
領域にヤング率が20000 ｋｇｆ／ｍｍ2 以下で降伏応力
が50ｋｇｆ／ｍｍ2 以下の変形し易い金属材料から成る
ネジ止め部材を設けたことから、内部に光半導体素子を
収納するとともに光ファイバを光ファイバ固定部材に固
定して光半導体装置となした後、ネジ止め部材を外部部
材にネジ止めして光半導体装置を外部部材に固定する
と、ネジ止めに伴う応力はネジ止め部材が変形すること
によって容易に吸収され、金属基体の中央領域に伝達さ
れることはない。According to the package for housing an optical semiconductor element of the present invention, both ends of a metal substrate made of a copper-tungsten alloy are easily deformed with a Young's modulus of 20,000 kgf / mm 2 or less and a yield stress of 50 kgf / mm 2 or less. Since the screw member made of a metal material is provided, the optical semiconductor element is housed inside, and the optical fiber is fixed to the optical fiber fixing member to form an optical semiconductor device. Then, the screw member is screwed to the external member. Then, when the optical semiconductor device is fixed to the external member, the stress caused by the screwing is easily absorbed by the deformation of the screwing member, and is not transmitted to the central region of the metal base.
【００１３】この場合、ネジ止め部材はヤング率が2000
0 ｋｇｆ／ｍｍ2 以下で降伏応力が50ｋｇｆ／ｍｍ2 以
下の変形し易い金属材料から成り靭性に優れることか
ら、ネジ止め部材の厚みを0.3 ｍｍ未満の薄いものとし
てもネジ止めの応力によってネジ止め部材が破壊される
ことはなく、また金属基体の厚みを0.6 ｍｍ未満の薄い
ものとしてもネジ止めの応力が金属基体に伝達されて反
りを矯正することもない。In this case, the screw member has a Young's modulus of 2000.
Since 0 kgf / mm 2 or less at the yield stress is excellent in toughness consists 50 kgf / mm 2 or less of easily deformable metallic material, screwed by the stress of screwing even thinner the thickness of the screw member of less than 0.3 mm The member is not destroyed, and even if the thickness of the metal base is less than 0.6 mm, the stress of screwing is not transmitted to the metal base to correct the warpage.
【００１４】[0014]
【発明の実施の形態】次に、本発明の光半導体素子収納
用パッケージを添付の図面に基づき詳細に説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a package for housing an optical semiconductor device according to the present invention.
【００１５】図１は本発明の光半導体素子収納用パッケ
ージの実施の形態の一例を示す断面図であり、１は金属
基体、２は金属枠体、３は金属蓋体である。また、図２
は図１に示す光半導体素子収納用パッケージの金属蓋体
３を除いた上面図である。FIG. 1 is a sectional view showing an embodiment of an optical semiconductor element housing package according to the present invention, wherein 1 is a metal base, 2 is a metal frame, and 3 is a metal lid. FIG.
FIG. 2 is a top view of the package for storing an optical semiconductor element shown in FIG. 1 except for a metal cover 3.
【００１６】金属基体１は、その上面の中央領域に光半
導体素子を載置するための載置部１ａを有し、載置部１
ａ上には光半導体素子４や温度センサ等の開示しない電
子部品がペルチェ素子５および銅−タングステン合金や
窒化アルミニウム質焼結体等の良熱伝導性材料から成る
基板６を介して接着固定される。The metal base 1 has a mounting portion 1a for mounting an optical semiconductor element in a central region on the upper surface thereof.
Electronic components (not shown) such as an optical semiconductor element 4 and a temperature sensor are bonded and fixed on a through a Peltier element 5 and a substrate 6 made of a good heat conductive material such as a copper-tungsten alloy or a sintered body of aluminum nitride. You.
【００１７】金属基体１は銅−タングステン合金から成
り、例えば、タングステン粉末（粒径約10μｍ）を1000
ｋｇｆ／ｃｍ2 程度の圧力で加圧成形するとともにこれ
を還元雰囲気中、約2300℃の温度で焼成して多孔質のタ
ングステン焼結体を得、次に1100℃の温度で加熱溶融さ
せた銅をタングステン焼結体の多孔部分に毛管現象を利
用して含浸させることによって製作される。The metal substrate 1 is made of a copper-tungsten alloy. For example, tungsten powder (particle size: about 10 μm) is
Pressurized at a pressure of about kgf / cm 2 and fired at a temperature of about 2300 ° C. in a reducing atmosphere to obtain a porous tungsten sintered body, and then heat-melted copper at a temperature of 1100 ° C. By impregnating the porous portion of the tungsten sintered body using the capillary phenomenon.
【００１８】また、金属基体１にはその上面に載置部１
ａを囲繞するようにして金属枠体２が銀ロウ等のロウ材
を介して取着されており、金属枠体２には一対の絶縁端
子部材７および光ファイバ固定部材８が側壁を貫通して
取着されている。The mounting portion 1 is provided on the upper surface of the metal base 1.
The metal frame 2 is attached via a brazing material such as silver brazing so as to surround the metal frame a. A pair of insulating terminal members 7 and an optical fiber fixing member 8 penetrate the metal frame 2 through the side wall. Has been attached.
【００１９】金属枠体２は内部に光半導体素子４を収容
する空間を形成するとともに絶縁端子部材７および光フ
ァイバ固定部材８を支持する作用をなす。The metal frame 2 has a function of forming a space for accommodating the optical semiconductor element 4 therein and supporting the insulating terminal member 7 and the optical fiber fixing member 8.
【００２０】金属枠体２は、鉄−ニッケル−コバルト合
金から成り、鉄−ニッケル−コバルト合金のインゴット
に従来周知の金属加工を施すことによって所定の枠状に
形成される。The metal frame 2 is made of an iron-nickel-cobalt alloy, and is formed into a predetermined frame shape by subjecting an ingot of the iron-nickel-cobalt alloy to a conventionally known metal working.
【００２１】金属枠体２の相対向する側壁に取着された
絶縁端子部材７は、酸化アルミニウム質焼結体等の電気
絶縁材料から成り、金属枠体２の内側から外側にかけて
導出する複数のメタライズ配線層９が設けられている。The insulating terminal members 7 attached to the opposing side walls of the metal frame 2 are made of an electrically insulating material such as an aluminum oxide sintered body, and a plurality of leads extending from the inside to the outside of the metal frame 2. A metallized wiring layer 9 is provided.
【００２２】絶縁端子部材７は、内部に収容する光半導
体素子４やペルチェ素子５ならびに図示しない電子部品
を外部電気回路に接続する作用を為し、例えば酸化アル
ミニウム質焼結体から成る場合、酸化アルミニウム・酸
化珪素・酸化カルシウム・酸化マグネシウム等の原料粉
末に適当なバインダや溶剤等を添加混合して泥漿状とな
すとともにこれを従来周知のドクターブレード法を採用
してシート状となすことによって複数枚のセラミックグ
リーンシートを得、しかる後、セラミックグリーンシー
トに打ち抜き加工を施すとともにこれらを上下に積層
し、高温で焼成することによって製作される。The insulating terminal member 7 serves to connect the optical semiconductor element 4 and the Peltier element 5 housed therein and electronic parts (not shown) to an external electric circuit. A suitable binder and solvent are added to raw material powders such as aluminum, silicon oxide, calcium oxide, and magnesium oxide to form a slurry, which is then formed into a sheet by employing a conventionally known doctor blade method. A ceramic green sheet is obtained. Thereafter, the ceramic green sheet is punched, stacked one above the other, and fired at a high temperature.
【００２３】絶縁端子部材７に設けられているメタライ
ズ配線層９は、一端に光半導体素子４の電極やペルチェ
素子５の電極ならびに図示しない電子部品の電極がボン
ディングワイヤ10を介して接続され（ここでは簡便のた
め光半導体素子４に接続されたボンディングワイヤ10の
みを示す）、また他端側には外部リード端子11が銀ロウ
等のロウ材を介して取着されており、外部リード端子11
を外部電気回路に接続することによって内部に収容され
る光半導体素子４やペルチェ素子５ならびに図示しない
電子部品が外部電気回路に接続されることとなる。The metallized wiring layer 9 provided on the insulating terminal member 7 is connected at one end to the electrode of the optical semiconductor element 4, the electrode of the Peltier element 5, and the electrode of an electronic component (not shown) via a bonding wire 10 (here, a bonding wire). Only the bonding wire 10 connected to the optical semiconductor element 4 is shown for simplicity), and an external lead terminal 11 is attached to the other end via a brazing material such as silver brazing.
Is connected to an external electric circuit, whereby the optical semiconductor element 4 and the Peltier element 5 housed therein and electronic components (not shown) are connected to the external electric circuit.
【００２４】なお、メタライズ配線導体９は、タングス
テン・モリブデン・マンガン等の高融点金属粉末から成
り、例えばタングステン粉末やモリブデン粉末等の金属
粉末に適当な有機バインダや溶剤を添加混合して得た金
属ペーストを絶縁端子部材７となるセラミックグリーン
シートに従来周知のスクリーン印刷法を採用して予め所
定のパターンに印刷塗布しておくことによって、絶縁端
子部材７の所定位置に被着形成される。The metallized wiring conductor 9 is made of a high melting point metal powder such as tungsten, molybdenum and manganese. For example, a metal powder obtained by adding a suitable organic binder or a solvent to a metal powder such as a tungsten powder or a molybdenum powder is mixed. The paste is applied to a predetermined position of the insulating terminal member 7 by printing and applying a paste on a ceramic green sheet serving as the insulating terminal member 7 in a predetermined pattern in advance by using a conventionally known screen printing method.
【００２５】また、絶縁端子部材７のメタライズ配線層
９に取着された外部リード端子11は、鉄−ニッケル−コ
バルト合金や鉄−ニッケル合金等の金属から成り、光半
導体素子４を外部電気回路に電気的に接続する作用をな
し、例えば、鉄−ニッケル−コバルト合金から成る板材
に打ち抜き加工やエッチング加工を施すことによって所
定の形状に形成される。The external lead terminal 11 attached to the metallized wiring layer 9 of the insulated terminal member 7 is made of a metal such as an iron-nickel-cobalt alloy or an iron-nickel alloy. It is formed into a predetermined shape by punching or etching a plate made of, for example, an iron-nickel-cobalt alloy.
【００２６】さらに金属枠体２の側壁には光ファイバ12
を固定するための光ファイバ固定部材８が金属枠体２の
内外を貫通するようにして取着されており、この光ファ
イバ固定部材８に、光ファイバ12に接合されたフランジ
部材13を接着剤や溶接により固定して、光ファイバ12を
固定することによって、光半導体素子４が励起した光を
外部に伝達する光ファイバ12が光半導体素子収納用パッ
ケージに接続固定されることとなる。Further, an optical fiber 12 is provided on the side wall of the metal frame 2.
An optical fiber fixing member 8 for fixing the optical fiber 12 is attached so as to pass through the inside and outside of the metal frame 2, and a flange member 13 joined to the optical fiber 12 is attached to the optical fiber fixing member 8 with an adhesive. By fixing the optical fiber 12 by welding or by fixing the optical fiber 12, the optical fiber 12 for transmitting the light excited by the optical semiconductor element 4 to the outside is connected and fixed to the optical semiconductor element housing package.
【００２７】光ファイバ固定部材８は、鉄−ニッケル−
コバルト合金等の金属から成る円筒部材であり、その内
側にサファイアやガラス等の透光性材料から成る窓部材
14が取着されており、この窓部材14を介して光半導体素
子４が励起した光が光ファイバ12に伝達される。The optical fiber fixing member 8 is made of iron-nickel-
A cylindrical member made of a metal such as a cobalt alloy, and a window member made of a translucent material such as sapphire or glass inside the cylindrical member
The light excited by the optical semiconductor element 4 is transmitted to the optical fiber 12 through the window member 14.
【００２８】また、金属基体１の両端領域には、金属枠
体２から外側に突出するようにして鉄−ニッケル−コバ
ルト合金や鉄−ニッケル合金・銅等のヤング率が20000
ｋｇｆ／ｍｍ2 以下で、降伏応力が50ｋｇｆ／ｍｍ2 以
下の金属材料から成るネジ止め部材15が接合されてい
る。The Young's modulus of the iron-nickel-cobalt alloy, iron-nickel alloy, copper, etc. is set to 20,000 at both end regions of the metal base 1 so as to project outward from the metal frame 2.
kgf / mm 2 or less, screwing member 15 yield stress consists 50 kgf / mm 2 or less of the metal material is joined.
【００２９】ネジ止め部材15は、光半導体装置を外部部
材に固定する作用を為し、その一部にはネジ止めのため
の切り欠き15ａが設けられており、切り欠き15ａにネジ
を挿通してネジ止め部材15を外部部材にネジ止めするこ
とによって光半導体装置が外部部材に固定されることと
なる。The screwing member 15 functions to fix the optical semiconductor device to an external member, and a cutout 15a for screwing is provided in a part thereof, and a screw is inserted through the cutout 15a. By screwing the screwing member 15 to the external member, the optical semiconductor device is fixed to the external member.
【００３０】ネジ止め部材15は、ヤング率が20000 ｋｇ
ｆ／ｍｍ2 以下で、降伏応力が50ｋｇｆ／ｍｍ2 以下の
金属材料から成り、変形し易いことから、ネジ止め部材
15を外部部材にネジ止めして光半導体装置を外部部材に
固定した場合、ネジ止めの応力はネジ止め部材15が変形
することによって容易に吸収され、その結果、金属基体
１にネジ止めの応力が伝達されて光半導体素子４の固定
高さが変わることはなく、光半導体素子４と光ファイバ
12との位置整合が保たれ、光半導体素子４が励起した光
を光ファイバ12を介して外部に良好に伝達することがで
きる。The screw member 15 has a Young's modulus of 20,000 kg.
f / mm 2 or less, it is made of a metal material with a yield stress of 50 kgf / mm 2 or less, and is easily deformed.
When the optical semiconductor device is fixed to the external member by screwing the optical member 15 to the external member, the screwing stress is easily absorbed by the deformation of the screwing member 15, and as a result, the stress of the screwing to the metal base 1 is increased. Is transmitted and the fixed height of the optical semiconductor element 4 does not change.
The alignment with the optical semiconductor device 12 is maintained, and the light excited by the optical semiconductor element 4 can be transmitted to the outside via the optical fiber 12 in a good condition.
【００３１】この場合、ネジ止め部材15はヤング率が20
000 ｋｇｆ／ｍｍ2 以下で降伏応力が50ｋｇｆ／ｍｍ2
以下の変形し易い金属材料から成り靭性に優れることか
ら、ネジ止め部材15の厚みを0.3 ｍｍ未満の薄いものと
してもネジ止めの応力によってネジ止め部材15が破壊さ
れることはなく、また金属基体１の厚みを0.6 ｍｍ未満
の薄いものとしてもネジ止めの応力が金属基体１に伝達
して光半導体素子４の固定高さに変動をきたすこともな
い。従って本発明の光半導体素子収納用パッケージによ
れば、ネジ止め部材15の厚みを0.3 ｍｍ未満としたり、
金属基体１の厚みを0.6 ｍｍ未満の薄いものとして、極
めて薄型の光半導体装置を提供することができる。In this case, the screw member 15 has a Young's modulus of 20.
5,000 kgf / mm 2 or less and yield stress is 50 kgf / mm 2
Since it is made of the following easily deformable metal material and has excellent toughness, even if the thickness of the screwing member 15 is as thin as less than 0.3 mm, the screwing member 15 does not break the screwing member 15 due to the stress of screwing. Even if the thickness of 1 is less than 0.6 mm, the stress of screwing is not transmitted to the metal base 1 and the fixing height of the optical semiconductor element 4 does not fluctuate. Therefore, according to the package for housing an optical semiconductor element of the present invention, the thickness of the screwing member 15 can be less than 0.3 mm,
By making the thickness of the metal base 1 thinner than 0.6 mm, an extremely thin optical semiconductor device can be provided.
【００３２】かくして、本発明の光半導体素子収納用パ
ッケージによれば、金属基体１の載置部１ａに光半導体
素子４をペルチェ素子５・基板６を介して接着固定する
とともに光半導体素子４の電極をボンディングワイヤ10
を介して絶縁端子部材７のメタライズ配線層９に電気的
に接続し、次に光ファイバ固定部材８に光ファイバ12を
光半導体素子４と光ファイバ12の光軸が合うように位置
決めして固定し、最後に金属枠体２の上面に金属蓋体３
をシームウエルド法等により接合することによって光半
導体装置が完成する。Thus, according to the optical semiconductor element housing package of the present invention, the optical semiconductor element 4 is bonded and fixed to the mounting portion 1a of the metal base 1 via the Peltier element 5 and the substrate 6, and Electrode bonding wire 10
Is electrically connected to the metallized wiring layer 9 of the insulated terminal member 7 through the above, and then the optical fiber 12 is positioned and fixed to the optical fiber fixing member 8 so that the optical axis of the optical semiconductor element 4 and the optical fiber 12 are aligned. Finally, a metal cover 3 is placed on the upper surface of the metal frame 2.
Are bonded by a seam welding method or the like, whereby an optical semiconductor device is completed.
【００３３】[0033]
【発明の効果】本発明の光半導体素子収納用パッケージ
によれば、銅−タングステン合金から成る金属基体の両
端領域にヤング率が20000 ｋｇｆ／ｍｍ2 以下で降伏応
力が50ｋｇｆ／ｍｍ2 以下の変形し易い金属材料から成
るネジ止め部材を設けたことから、内部に光半導体素子
を収納するとともに光ファイバを光ファイバ固定部材に
固定して光半導体装置となした後、ネジ止め部材を外部
部材にネジ止めして光半導体装置を外部部材に固定する
と、ネジ止めに伴う応力はネジ止め部材が変形すること
によって容易に吸収され、その結果、ネジ止めの応力が
金属基体の中央領域に伝達されて光半導体素子の高さが
変わることはなく、光半導体素子と光ファイバとの位置
整合が保たれ、光半導体素子が励起した光を光ファイバ
を介して外部に良好に伝達することができる。According to the package for housing an optical semiconductor element of the present invention, the metal substrate made of a copper-tungsten alloy is deformed at both end regions with a Young's modulus of 20,000 kgf / mm 2 or less and a yield stress of 50 kgf / mm 2 or less. Since a screw member made of a metal material that is easy to use is provided, the optical semiconductor element is housed inside, and the optical fiber is fixed to the optical fiber fixing member to form an optical semiconductor device. When the optical semiconductor device is fixed to the external member by screwing, the stress caused by screwing is easily absorbed by the deformation of the screwing member, and as a result, the stress of screwing is transmitted to the central region of the metal base. The height of the optical semiconductor element does not change, the alignment between the optical semiconductor element and the optical fiber is maintained, and the light excited by the optical semiconductor element is satisfactorily transmitted to the outside via the optical fiber. It can be reached.
【００３４】この場合、ネジ止め部材はヤング率が2000
0 ｋｇｆ／ｍｍ2 以下で降伏応力が50ｋｇｆ／ｍｍ2 以
下の変形し易い金属材料から成り靭性に優れることか
ら、ネジ止め部材の厚みを0.3 ｍｍ未満の薄いものとし
てもネジ止めの応力によってネジ止め部材が破壊される
ことはなく、また金属基体の厚みを0.6 ｍｍ未満の薄い
ものとしてもネジ止めの応力が金属基体に伝達して光半
導体素子の固定高さに変動をきたすこともない。従っ
て、本発明の光半導体素子収納用パッケージによれば、
ネジ止め部材の厚みを0.3 ｍｍ未満としたり、金属基体
１の厚みを0.6 ｍｍ未満の薄いものとして、極めて薄型
の光半導体装置を提供することができる。In this case, the screw member has a Young's modulus of 2000.
Since 0 kgf / mm 2 or less at the yield stress is excellent in toughness consists 50 kgf / mm 2 or less of easily deformable metallic material, screwed by the stress of screwing even thinner the thickness of the screw member of less than 0.3 mm The member is not destroyed, and even if the thickness of the metal base is less than 0.6 mm, the screwing stress is not transmitted to the metal base and the fixing height of the optical semiconductor element does not change. Therefore, according to the package for housing an optical semiconductor element of the present invention,
An extremely thin optical semiconductor device can be provided by setting the thickness of the screw member to be less than 0.3 mm or making the thickness of the metal base 1 as thin as less than 0.6 mm.
【００３５】以上により、本発明によれば、ネジ止めの
応力によって光半導体素子の固定高さが変わることがな
く、光半導体素子と光ファイバとの位置整合が保たれて
光半導体素子が励起した光を外部に良好に伝達すること
ができ、しかも薄型の光半導体装置とできる光半導体素
子収納用パッケージを提供することができた。As described above, according to the present invention, the fixing height of the optical semiconductor element does not change due to the stress of screwing, and the optical semiconductor element is excited while the position alignment between the optical semiconductor element and the optical fiber is maintained. An optical semiconductor element housing package capable of transmitting light to the outside satisfactorily and being a thin optical semiconductor device was provided.
【図１】本発明の光半導体素子収納用パッケージの実施
の形態の一例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of an optical semiconductor element housing package of the present invention.
【図２】図１に示す光半導体素子収納用パッケージの金
属蓋体４を除いた上面図である。FIG. 2 is a top view of the package for housing an optical semiconductor element shown in FIG. 1 excluding a metal cover 4;
１・・・金属基体 １ａ・・光半導体素子載置部 ２・・・金属枠体 ３・・・金属蓋体 ４・・・光半導体素子 ８・・・光ファイバ固定部材 12・・・光ファイバ 15・・・ネジ止め部材 DESCRIPTION OF SYMBOLS 1 ... Metal base 1a ... Optical semiconductor element mounting part 2 ... Metal frame 3 ... Metal lid 4 ... Optical semiconductor element 8 ... Optical fiber fixing member 12 ... Optical fiber 15 ・ ・ ・ Screw fixing member
Claims (1)
中央領域に光半導体素子が載置される光半導体素子載置
部を有する金属基体と、該金属基体上に前記光半導体素
子載置部を囲繞するように取着され、側部に光ファイバ
を固定するための光ファイバ固定部材を有する金属枠体
と、前記金属基体の両端領域に前記金属枠体から突出す
るように接合されたヤング率が２００００ｋｇｆ／ｍｍ
2 以下で降伏応力が５０ｋｇｆ／ｍｍ2 以下の金属材料
から成るネジ止め部材と、前記金属枠体の上面に取着さ
れ、光半導体素子を気密に封止する金属蓋体とから成る
ことを特徴とする光半導体素子収納用パッケージ。1. A metal base made of a copper-tungsten alloy and having an optical semiconductor element mounting part on which an optical semiconductor element is mounted in a central region of an upper surface, and the optical semiconductor element mounting part on the metal base. A metal frame attached so as to surround and have an optical fiber fixing member for fixing an optical fiber to a side portion, and a Young's modulus joined to both end regions of the metal base so as to protrude from the metal frame. Is 20000kgf / mm
A screw member made of a metal material having a yield stress of not more than 2 and a yield stress of not more than 50 kgf / mm 2, and a metal lid attached to an upper surface of the metal frame and hermetically sealing the optical semiconductor element. Package for storing an optical semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23355897A JP3652844B2 (en) | 1997-08-29 | 1997-08-29 | Optical semiconductor element storage package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23355897A JP3652844B2 (en) | 1997-08-29 | 1997-08-29 | Optical semiconductor element storage package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1174619A true JPH1174619A (en) | 1999-03-16 |
| JP3652844B2 JP3652844B2 (en) | 2005-05-25 |
Family
ID=16956958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23355897A Expired - Fee Related JP3652844B2 (en) | 1997-08-29 | 1997-08-29 | Optical semiconductor element storage package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3652844B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001319984A (en) * | 2000-05-11 | 2001-11-16 | Furukawa Electric Co Ltd:The | Package for photo semiconductor device and optical semiconductor device module using package |
| US6963593B2 (en) | 2002-10-04 | 2005-11-08 | Opnext Japan, Inc. | Semiconductor laser module and optical transmitter |
| JP2010287766A (en) * | 2009-06-12 | 2010-12-24 | Kyocera Corp | Package for housing optical semiconductor element, and optical semiconductor device |
| JP2011018824A (en) * | 2009-07-10 | 2011-01-27 | Kyocera Corp | Package for storing optical semiconductor element, and optical semiconductor device |
| JP2011035041A (en) * | 2009-07-30 | 2011-02-17 | Kyocera Corp | Component for storing optical semiconductor element, and optical semiconductor device |
| JP2011151209A (en) * | 2010-01-21 | 2011-08-04 | Opnext Japan Inc | Photocoupling device |
-
1997
- 1997-08-29 JP JP23355897A patent/JP3652844B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001319984A (en) * | 2000-05-11 | 2001-11-16 | Furukawa Electric Co Ltd:The | Package for photo semiconductor device and optical semiconductor device module using package |
| JP4494587B2 (en) * | 2000-05-11 | 2010-06-30 | 古河電気工業株式会社 | Optical semiconductor device package and optical semiconductor device module using the package |
| US6963593B2 (en) | 2002-10-04 | 2005-11-08 | Opnext Japan, Inc. | Semiconductor laser module and optical transmitter |
| JP2010287766A (en) * | 2009-06-12 | 2010-12-24 | Kyocera Corp | Package for housing optical semiconductor element, and optical semiconductor device |
| JP2011018824A (en) * | 2009-07-10 | 2011-01-27 | Kyocera Corp | Package for storing optical semiconductor element, and optical semiconductor device |
| JP2011035041A (en) * | 2009-07-30 | 2011-02-17 | Kyocera Corp | Component for storing optical semiconductor element, and optical semiconductor device |
| JP2011151209A (en) * | 2010-01-21 | 2011-08-04 | Opnext Japan Inc | Photocoupling device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3652844B2 (en) | 2005-05-25 |
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