JP2784131B2 - Package for storing optical semiconductor elements - Google Patents
Package for storing optical semiconductor elementsInfo
- Publication number
- JP2784131B2 JP2784131B2 JP5103114A JP10311493A JP2784131B2 JP 2784131 B2 JP2784131 B2 JP 2784131B2 JP 5103114 A JP5103114 A JP 5103114A JP 10311493 A JP10311493 A JP 10311493A JP 2784131 B2 JP2784131 B2 JP 2784131B2
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- metal
- semiconductor element
- metal base
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Led Device Packages (AREA)
- Optical Couplings Of Light Guides (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は光半導体素子を収容する
ための光半導体素子収納用パッケージに関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device housing package for housing an optical semiconductor device.
【０００２】[0002]
【従来の技術】従来、光半導体素子を収容するための光
半導体素子収納用パッケージは、銅タングステン合金か
ら成り、上面中央領域に光半導体素子が載置される載置
部を有する金属基体と、コバール金属から成り、前記光
半導体素子載置部を囲繞するようにして金属基体上に銀
ロウ等のロウ材を介し取着され、側部に光ファイバーを
固定するための固定部材と、外部リード端子がロウ付け
されたメタライズ配線層を有するアルミナセラミックス
等から成る絶縁端子部材とが取着された金属枠体と、前
記金属枠体の上部に取着され、光半導体素子を気密に封
止する金属蓋体とから構成されており、金属基体の光半
導体素子載置部に光半導体素子を接着固定するとともに
光半導体素子の各電極をボンディングワイヤを介して外
部リード端子が取着されているメタライズ配線層に接続
し、次に金属枠体の上部に金属蓋体を取着させ、金属基
体、金属枠体、及び金属蓋体等とから成る容器内部に光
半導体素子を収容し、最後に金属枠体の光ファイバー固
定部材に光ファイバーをレーザー光線の照射による溶接
によって接合させ、光ファイバーを金属枠体に固定する
ことによって製品としての光半導体装置となる。2. Description of the Related Art Conventionally, an optical semiconductor device housing package for housing an optical semiconductor device is made of a copper-tungsten alloy, and has a metal base having a mounting portion on which an optical semiconductor device is mounted in a central region on an upper surface; A fixing member made of Kovar metal, attached to a metal base via a brazing material such as silver brazing so as to surround the optical semiconductor element mounting portion, and fixing an optical fiber to a side portion; and an external lead terminal. A metal frame having an insulating terminal member made of alumina ceramic or the like having a metallized wiring layer brazed thereon, and a metal which is mounted on the metal frame and hermetically seals the optical semiconductor element. The optical semiconductor element is adhered and fixed to the optical semiconductor element mounting portion of the metal base, and the external lead terminals are connected to each electrode of the optical semiconductor element via a bonding wire. Connected to the metallized wiring layer, and then a metal lid is attached to the top of the metal frame, and the optical semiconductor element is housed inside a container including a metal base, a metal frame, and a metal lid. Finally, the optical fiber is joined to the optical fiber fixing member of the metal frame by welding by irradiating a laser beam, and the optical fiber is fixed to the metal frame, thereby obtaining an optical semiconductor device as a product.
【０００３】かかる光半導体装置は外部電気回路から供
給される駆動信号によって光半導体素子に光を励起さ
せ、該励起された光を光ファイバーを介して外部に伝達
することによって高速光通信等に使用される光半導体装
置として機能する。Such an optical semiconductor device is used for high-speed optical communication or the like by exciting light to an optical semiconductor element by a drive signal supplied from an external electric circuit and transmitting the excited light to the outside via an optical fiber. Function as an optical semiconductor device.
【０００４】また前記光半導体装置は金属基体の両端領
域に形成されているネジ止め部を外部部材にネジ止めす
ることによって外部部材に取着固定されることとなる。The optical semiconductor device is fixed to the external member by screwing the screwed portions formed at both end regions of the metal base to the external member.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この従
来の光半導体素子収納用パッケージは金属基体を構成す
る銅 タングステン合金の熱膨張係数が７．０×１０-6
／℃（室温〜８００℃）であり、金属枠体を構成するコ
バール金属の熱膨張係数（１０．０×１０-6／℃：室温
〜８００℃）と相違することから金属基体に金属枠体を
銀ロウ等のロウ材を介してロウ付けすると両者の熱膨張
係数の相違に起因する熱応力によって金属基体に１０乃
至２０μm 程度の反りが発生したものとなっている。そ
のため、この光半導体素子収納用パッケージに光半導体
素子を収容し、光半導体装置となした後、金属基体の両
端領域に形成したネジ止め部を外部部材にネジ止めし、
光半導体装置を外部部材に取着固定した場合、金属基体
を外部部材にネジ止めする際に金属基体の反りが矯正さ
れ、その矯正に伴う応力が金属基体の中央領域に凹凸を
発生させるとともに該金属基体の中央領域に固定されて
いる光半導体素子の固定位置にズレを生じさせ、その結
果、光半導体素子と光ファイバーとの整合が破れ、光半
導体素子が励起した光を光ファイバーを介し外部に良好
に伝達することができないという欠点を有していた。However, in this conventional package for housing an optical semiconductor device, the copper-tungsten alloy constituting the metal substrate has a coefficient of thermal expansion of 7.0 × 10 -6.
/ ° C (room temperature to 800 ° C), which is different from the thermal expansion coefficient (10.0 × 10 −6 / ° C: room temperature to 800 ° C) of the Kovar metal constituting the metal frame. Is brazed through a brazing material such as silver brazing, the metal substrate is warped by about 10 to 20 μm due to thermal stress caused by the difference in the coefficient of thermal expansion between the two. Therefore, after the optical semiconductor element is housed in the optical semiconductor element housing package and the optical semiconductor device is formed, the screw portions formed at both end regions of the metal base are screwed to the external member,
When the optical semiconductor device is attached and fixed to an external member, warpage of the metal substrate is corrected when the metal substrate is screwed to the external member, and the stress caused by the correction generates irregularities in the central region of the metal substrate, and The optical semiconductor element fixed in the central region of the metal base is displaced at a fixed position. As a result, the alignment between the optical semiconductor element and the optical fiber is broken, and the light excited by the optical semiconductor element is favorably transmitted to the outside via the optical fiber. Has the disadvantage that it cannot be transmitted to
【０００６】[0006]
【発明の目的】本発明は上述の欠点に鑑み案出されたも
ので、その目的は光半導体素子収納用パッケージの内部
に収容される光半導体素子と光ファイバーとの整合を正
確とし、光半導体素子の励起した光を光ファイバーを介
し外部に良好に伝達することができる光半導体素子収納
用パッケージを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to accurately align an optical semiconductor device and an optical fiber housed in an optical semiconductor device housing package, and to provide an optical semiconductor device. It is an object of the present invention to provide an optical semiconductor element housing package capable of transmitting the excited light to the outside via an optical fiber.
【０００７】[0007]
【課題を解決するための手段】本発明は上面の中央領域
に光半導体素子が載置される載置部を、両端領域にネジ
止め部を有する金属基体と、前記光半導体素子載置部を
囲繞するようにして金属基体上に取着され、側部に光フ
ァイバーを固定するための固定部を有する金属枠体と、
前記金属枠体の上面に取着され光半導体素子を気密に封
止する金属蓋体とから成る光半導体素子収納用パッケー
ジであって、前記金属基体はその中央領域の厚みをＸ、
両端領域の厚みをＴとしたとき、下記式を満足する厚み
であることを特徴とする。According to the present invention, there is provided a mounting portion on which an optical semiconductor element is mounted in a central region on an upper surface, a metal base having screw portions on both end regions, and a mounting portion for the optical semiconductor device. A metal frame attached to the metal base so as to surround and having a fixing portion for fixing the optical fiber to the side,
A metal lid attached to the upper surface of the metal frame and hermetically sealing the optical semiconductor element, wherein the metal substrate has a thickness in a central region of X,
When the thickness of both end regions is T, the thickness satisfies the following expression.
【０００８】１．０≧Ｔ≧０．３（ｍｍ）、Ｘ≧２Ｔ1.0 ≧ T ≧ 0.3 (mm), X ≧ 2T
【０００９】[0009]
【作用】本発明の光半導体素子収納用パッケージは金属
基体の両端領域の厚み（Ｔ）を１．０≧Ｔ≧０．３（ｍ
ｍ）とし、中央領域の厚み（Ｘ）をＸ≧２Ｔとして段差
を設けたことから、金属基体の中央領域に光半導体素子
を接着固定するとともに両端領域のネジ止め部を外部部
材に固定した場合、金属基体の反り矯正に伴う応力は金
属基体の両端領域を変形させることによって吸収され、
中央領域には一切伝達されず、その結果、金属基体の中
央領域に接着固定されている光半導体素子はその固定位
置が常に一定となり、光半導体素子と光ファイバーとの
整合を正確として光半導体素子が励起した光を光ファイ
バーを介し外部に良好に伝達することが可能となる。According to the package for storing an optical semiconductor element of the present invention, the thickness (T) of both end regions of the metal base is set to 1.0 ≧ T ≧ 0.3 (m
m), and the thickness (X) of the central region is X ≧ 2T and the step is provided, so that the optical semiconductor element is bonded and fixed to the central region of the metal base and the screwed portions at both end regions are fixed to the external member. The stress accompanying the warpage correction of the metal base is absorbed by deforming both end regions of the metal base,
It is not transmitted to the central area at all, and as a result, the optical semiconductor element bonded and fixed to the central area of the metal substrate has a fixed position at all times, and the optical semiconductor element is accurately aligned with the optical fiber and the optical semiconductor element is fixed. The excited light can be favorably transmitted to the outside via the optical fiber.
【００１０】[0010]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。BRIEF DESCRIPTION OF THE DRAWINGS FIG.
【００１１】図１及び図２は本発明の光半導体素子収納
用パッケージの一実施例を示し、１は金属基体、２は金
属枠体、３は絶縁端子部材、４は金属環体、５は金属蓋
体である。1 and 2 show an embodiment of a package for housing an optical semiconductor device according to the present invention, wherein 1 is a metal substrate, 2 is a metal frame, 3 is an insulating terminal member, 4 is a metal ring, and 5 is a metal ring. It is a metal lid.
【００１２】前記金属基体１はその上面中央領域Ａに光
半導体素子６を載置するための載置部１ａを有し、該載
置部１ａ上には光半導体素子６が接着剤を介して接着固
定される。The metal base 1 has a mounting portion 1a for mounting the optical semiconductor element 6 on the central area A of the upper surface, and the optical semiconductor element 6 is placed on the mounting portion 1a via an adhesive. Adhesively fixed.
【００１３】また前記金属基体１はその上面の中央領域
Ａを囲繞するように側面に一対の絶縁端子部材３及び光
ファイバーを固定する固定部材７が取着された金属枠体
２が銀ロウ等のロウ材を介して取着されている。The metal frame 1 has a pair of insulating terminal members 3 and a fixing member 7 for fixing an optical fiber attached to the side surface so as to surround a central region A on the upper surface of the metal frame 1. It is attached via brazing material.
【００１４】前記金属基体１は銅 タングステン合金か
ら成り、例えば、タングステン粉末（約１０μｍ）を１
０００ｋｇ／ｃｍ2 の圧力で加圧成形するとともにこれ
を還元雰囲気中、約２３００℃の温度で焼成して多孔質
のタングステン焼結体を得、次に１１００℃の温度で加
熱溶融させた銅を前記タングステン焼結体の多孔部分に
毛管現象を利用して含浸させることによって製作され
る。The metal substrate 1 is made of a copper-tungsten alloy. For example, tungsten powder (about 10 μm) is
2,000 kg / cm 2 under pressure and fired in a reducing atmosphere at a temperature of about 2300 ° C. to obtain a porous tungsten sintered body, and then heat-melted copper at a temperature of 1100 ° C. It is manufactured by impregnating the porous portion of the tungsten sintered body using a capillary phenomenon.
【００１５】前記金属基体１はまたその両端領域Ｂにネ
ジ止め部８が設けられており、該ネジ止め部８を外部部
材（不図示）にネジ止めすることによって光半導体素子
６が接着固定された金属基体１は外部部材に取着固定さ
れることになる。The metal base 1 is provided with screw portions 8 at both end regions B. The optical semiconductor element 6 is bonded and fixed by screwing the screw portions 8 to an external member (not shown). The metal base 1 is attached and fixed to an external member.
【００１６】尚、前記金属基体１の両端領域Ｂに形成さ
れたネジ止め部８は金属基体１に従来周知の金属穴あけ
加工を施すことによって金属基体１の両端領域Ｂに形成
される。The screwing portions 8 formed at both end regions B of the metal base 1 are formed at both end regions B of the metal base 1 by subjecting the metal base 1 to a conventionally known metal drilling process.
【００１７】更に前記金属基体１はその両端領域Ｂの厚
さ（Ｔ）が１．０≧Ｔ≧０．３（ｍｍ）、中央領域Ａの
厚さ（Ｘ）がＸ≧２Ｔとなっており、中央領域Ａと両端
領域Ｂとの境に段差が形成されている。The thickness (T) of both end regions B of the metal base 1 is 1.0 ≧ T ≧ 0.3 (mm), and the thickness (X) of the central region A is X ≧ 2T. , A step is formed at the boundary between the central region A and both end regions B.
【００１８】前記金属基体１に段差を形成するのは金属
基体１のネジ止め部８を外部部材にネジ止めする際、金
属基体１に金属枠体２との熱膨張係数の相違によって発
生している反りが矯正され、金属基体１の反り矯正に伴
う応力が光半導体素子６の固定されている中央領域Ａに
伝達されるのを防止するためであり、これによって金属
基体１の中央領域Ａに接着固定されている光半導体素子
６はその固定位置が常に一定となり、光半導体素子６と
金属枠体２の側面に設けた光ファイバー固定部材７に固
定される光ファイバー９とを整合させ、光半導体素子６
が励起した光を光ファイバー９を介し外部に良好に伝達
させることが可能となる。The step formed in the metal base 1 is generated by a difference in the coefficient of thermal expansion between the metal base 1 and the metal frame 2 when the screwed portion 8 of the metal base 1 is screwed to an external member. This is to prevent the warpage of the metal substrate 1 from being transmitted and to prevent the stress accompanying the warp correction of the metal substrate 1 from being transmitted to the central region A where the optical semiconductor element 6 is fixed. The fixing position of the optical semiconductor element 6 fixed by adhesion is always constant, and the optical semiconductor element 6 and the optical fiber 9 fixed to the optical fiber fixing member 7 provided on the side surface of the metal frame 2 are aligned. 6
Can be favorably transmitted to the outside via the optical fiber 9.
【００１９】尚、前記金属基体１はその両端領域Ｂの厚
さ（Ｔ）が０．３ｍｍ未満となると金属基体１の機械的
強度が低下して光半導体素子収納用パッケージを外部部
材に強固に取着固定することができなくなり、また１．
０ｍｍを越えると光半導体素子収納用パッケージの全体
の厚みが厚くなり、近時の薄形化が進む電子機器には搭
載が困難となる。従って、前記金属基体１はその両端領
域Ｂの厚さ（Ｔ）が０．３乃至１．０ｍｍの範囲に特定
される。When the thickness (T) of both end regions B of the metal base 1 is less than 0.3 mm, the mechanical strength of the metal base 1 is reduced, and the package for housing the optical semiconductor element is firmly attached to an external member. It is no longer possible to attach and fix.
If the thickness exceeds 0 mm, the entire thickness of the package for storing an optical semiconductor element becomes too thick, and it becomes difficult to mount the package on electronic devices, which have recently become thinner. Therefore, the thickness (T) of both end regions B of the metal base 1 is specified in the range of 0.3 to 1.0 mm.
【００２０】また前記金属基体１はその中央領域Ａの厚
さ（Ｘ）が両端領域のＢの厚さ（Ｔ）に対し、Ｘ＜２Ｔ
となると中央領域Ａと両端領域Ｂの境に形成される段差
が低くなって金属基体１の両端領域Ｂをネジ止めする時
の応力が中央領域Ａにも伝わり光半導体素子６と光ファ
イバー９との整合がとれなくなってしまう。従って、前
記金属基体１の中央領域Ａの厚さ（Ｘ）は両端領域Ｂの
厚さ（Ｔ）に対し、Ｘ≧２Ｔの範囲に特定される。The thickness (X) of the central region A of the metal substrate 1 is smaller than the thickness (T) of B at both end regions by X <2T.
Then, the step formed at the boundary between the central region A and the both end regions B becomes low, and the stress generated when the both end regions B of the metal base 1 are screwed is transmitted to the central region A, and the optical semiconductor element 6 and the optical fiber 9 Matching cannot be achieved. Therefore, the thickness (X) of the central region A of the metal base 1 is specified in the range of X ≧ 2T with respect to the thickness (T) of the both end regions B.
【００２１】更に前記金属基体１はその上面で中央領域
Ａを囲繞するようにして金属枠体２が銀ロウ等のロウ材
を介して取着されている。Further, a metal frame 2 is attached via a brazing material such as silver brazing so as to surround the central region A on the upper surface of the metal base 1.
【００２２】前記金属枠体２は内部に光半導体素子６を
収容する空間を形成するとともに外部リード端子を備え
た絶縁端子部材３と光ファイバー９を固定する固定部材
７を支持する作用を為す。The metal frame 2 serves to form a space for accommodating the optical semiconductor element 6 therein and to support the insulating terminal member 3 having external lead terminals and the fixing member 7 for fixing the optical fiber 9.
【００２３】前記金属枠体２はコバール金属から成り、
コバール金属のインゴット（塊）を従来周知の金属加工
法を採用することによって所定の枠状となっている。The metal frame 2 is made of Kovar metal,
A Kovar metal ingot is formed into a predetermined frame shape by employing a conventionally known metal working method.
【００２４】また前記金属枠体２はその相対向する側面
に一対の絶縁端子部材３が取着されており、該絶縁端子
部材３は内部に収容する光半導体素子６の各電極を外部
電気回路に接続する作用を為す。The metal frame 2 has a pair of insulated terminal members 3 attached to opposing side surfaces thereof. The insulated terminal members 3 connect the electrodes of the optical semiconductor element 6 housed therein to an external electric circuit. Acts to connect to
【００２５】前記金属枠体２の側面に取着された絶縁端
子部材３はアルミナセラミックス等の電気絶縁材料から
成り、その上部に金属枠体２の内側から外側にかけて導
出する複数個のメタライズ配線層１０が設けられてい
る。The insulating terminal member 3 attached to the side surface of the metal frame 2 is made of an electrically insulating material such as alumina ceramic, and a plurality of metallized wiring layers extending from the inside to the outside of the metal frame 2 above the insulating terminal member 3. 10 are provided.
【００２６】前記絶縁端子部材３は、例えば、アルミナ
セラミックスから成る場合、アルミナ（Ａｌ2 Ｏ3 ）、
シリカ（ＳｉＯ2 ）、カルシア（ＣａＯ）、マグネシア
（ＭｇＯ）等の原料粉末に適当なバインダー、有機溶媒
を添加混合して泥漿状となすとともにこれを従来周知の
ドクタブレード法を採用することによってセラミックグ
リーンシート（セラミック生シート）を得、しかる後、
前記セラミックグリーンシートに適当な打ち抜き加工を
施すとともにこれを複数枚積層し、高温（約１６００
℃）の温度で焼成することによって製作される。When the insulating terminal member 3 is made of, for example, alumina ceramics, alumina (Al 2 O 3 ),
A raw material powder such as silica (SiO 2 ), calcia (CaO), and magnesia (MgO) is mixed with a suitable binder and an organic solvent to form a slurry, which is formed by a conventionally known doctor blade method. Obtain a green sheet (ceramic raw sheet), and then
The ceramic green sheet is subjected to an appropriate punching process and a plurality of the green sheets are laminated, and a high temperature (about 1600
(° C.).
【００２７】また前記絶縁端子部材３に設けられている
メタライズ配線層１０は一端に光半導体素子６の電極が
ボンディングワイヤ１１を介して接続され、また他端側
には外部リード端子１２が銀ロウ等のロウ材を介して取
着されており、外部リード端子１２を外部電気回路に接
続することによって、内部に収容される光半導体素子６
はメタライズ配線層１０及び外部リード端子１２を介し
外部電気回路と接続されることとなる。The metallized wiring layer 10 provided on the insulating terminal member 3 has one end to which an electrode of the optical semiconductor element 6 is connected via a bonding wire 11 and the other end to which an external lead terminal 12 has a silver solder. The optical semiconductor element 6 accommodated inside by connecting the external lead terminal 12 to an external electric circuit is attached through a brazing material such as
Is connected to an external electric circuit via the metallized wiring layer 10 and the external lead terminals 12.
【００２８】尚、前記メタライズ配線層１０はタングス
テン、モリブデン、マンガン等の高融点金属粉末から成
り、該高融点金属粉末に適当な有機溶剤、溶媒を添加混
合して得た金属ペーストを従来周知のスクリーン印刷法
を採用し、絶縁端子部材６となるセラミックグリーンシ
ートに予め被着させておくことによって、絶縁端子部材
６の所定位置に所定パターンに被着形成される。The metallized wiring layer 10 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like. A metal paste obtained by adding an appropriate organic solvent and a solvent to the high melting point metal powder is mixed with a conventionally known metal paste. By adopting a screen printing method and attaching the insulating terminal member 6 to a ceramic green sheet beforehand, the insulating terminal member 6 is attached in a predetermined pattern at a predetermined position.
【００２９】また前記メタライズ配線層１０にロウ付け
取着される外部リード端子１２は光半導体素子５の電極
を外部電気回路に電気的に接続する作用を為し、コバー
ル金属や４２アロイ等の金属材料で形成され、例えば、
コバール金属のインゴット（塊）に圧延加工法や打ち抜
き加工法等の従来周知の金属加工法を施すことによって
製作される。An external lead terminal 12 brazed and attached to the metallized wiring layer 10 functions to electrically connect the electrodes of the optical semiconductor element 5 to an external electric circuit, and is made of metal such as Kovar metal or 42 alloy. Formed of material, for example,
It is manufactured by applying a conventionally known metal working method such as a rolling method or a punching method to an ingot of a Kovar metal.
【００３０】更に前記金属枠体２の側面には光ファイバ
ー９を固定するための固定部材７が取着されており、該
固定部材７に光ファイバー９を固定することによって光
半導体素子６が励起した光を外部に伝達する光ファイバ
ー９が金属枠体２に固定されることとなる。Further, a fixing member 7 for fixing the optical fiber 9 is attached to the side surface of the metal frame 2, and the optical semiconductor element 6 is excited by fixing the optical fiber 9 to the fixing member 7. Is transmitted to the outside and is fixed to the metal frame 2.
【００３１】前記固定部材７はコバール金属等から成
り、銀ロウ等のロウ材を介して金属枠体２の側面に取着
される。The fixing member 7 is made of Kovar metal or the like, and is attached to the side surface of the metal frame 2 via a brazing material such as silver brazing.
【００３２】前記側面に絶縁端子部材３及び光ファイバ
ー９を固定する固定部材７が取着された金属枠体２はそ
の上面に金属環体４及び金属蓋体５が順次取着され、こ
れによって内部に収容する光半導体素子６が気密に封止
され、製品としての光半導体装置となる。The metal frame 2 on which the fixing member 7 for fixing the insulating terminal member 3 and the optical fiber 9 is fixed to the side surface, the metal ring 4 and the metal lid 5 are sequentially mounted on the upper surface thereof. The optical semiconductor element 6 housed in the optical semiconductor device is hermetically sealed to form an optical semiconductor device as a product.
【００３３】前記金属環体４は金属枠体２の上面に金属
蓋体５を取着する際の下地金属部材として作用し、コバ
ール金属等により形成されている。The metal ring 4 functions as a base metal member when the metal cover 5 is attached to the upper surface of the metal frame 2, and is made of Kovar metal or the like.
【００３４】尚、前記金属環体４は銀ロウ等のロウ材を
介して金属枠体２の上面に取着されている。The metal ring 4 is attached to the upper surface of the metal frame 2 via a brazing material such as silver brazing.
【００３５】また前記金属環体４の上面に取着される金
属蓋体５は光半導体素子６を気密に封止する作用を為
し、コバール金属から成り、ロウ材を介して、或いはシ
ームウエルド法等の溶接により金属環体４の上面に取着
される。The metal cover 5 attached to the upper surface of the metal ring 4 functions to hermetically seal the optical semiconductor element 6 and is made of Kovar metal, and is provided with a brazing material or a seam weld. It is attached to the upper surface of the metal ring 4 by welding such as welding.
【００３６】かくして本発明の光半導体素子収納用パッ
ケージによれば、金属基体１の光半導体素子載置部１ａ
に光半導体素子６を接着固定するとともに光半導体素子
６の各電極をボンディングワイヤ１１を介して外部リー
ド端子１２が取着されているメタライズ配線層１０に接
続し、次に金属環体４の上面に金属蓋体５を取着させ、
金属基体１、金属枠体２及び金属蓋体５等から成る容器
内部に光半導体素子６を収容し、最後に金属枠体２の固
定部材７に、光ファイバー９を固定させることによって
製品としての光半導体装置となり、外部電気回路から供
給される駆動信号によって光半導体素子６に光を励起さ
せ、該励起された光を光ファイバー９を介して外部に伝
達することによって高速通信等に使用される光半導体装
置として機能する。Thus, according to the optical semiconductor element housing package of the present invention, the optical semiconductor element mounting portion 1a of the metal base 1 is provided.
And the electrodes of the optical semiconductor element 6 are connected via bonding wires 11 to the metallized wiring layer 10 to which the external lead terminals 12 are attached. Attach the metal lid 5 to the
The optical semiconductor device 6 is accommodated in a container including the metal base 1, the metal frame 2, the metal lid 5, and the like, and finally, the optical fiber 9 is fixed to the fixing member 7 of the metal frame 2, thereby obtaining light as a product. An optical semiconductor used for high-speed communication or the like by exciting a light to the optical semiconductor element 6 by a drive signal supplied from an external electric circuit and transmitting the excited light to the outside via an optical fiber 9. Functions as a device.
【００３７】尚、本発明は前記実施例に限定されるもの
ではなく、本発明の要旨を逸脱しない範囲であれば種々
の変更は可能であり、例えば金属基体１の中央領域Ａと
両端領域Ｂの境に形成される段差に半径０．１乃至１．
０ｍｍのＲ面、もしくは幅０．１乃至１．０ｍｍのＣ面
を設けておけば金属基体１の機械的強度を強いものとす
ると同時に金属基体２の両端領域Ｂを外部部材に取着す
る際に発する応力が中央領域Ａに伝わるのをより有効に
防止することができ、これによって光半導体素子６と光
ファイバー９との整合をより正確となすことができる。
従って、前記金属基体１は中央領域Ａと両端領域Ｂの境
に形成される段差に半径０．１乃至１．０ｍｍのＲ面、
もしくは幅０．１乃至１．０ｍｍのＣ面を設けておくこ
とが好ましい。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. The radius of the step formed at the border of 0.1 to 1.
By providing an R surface of 0 mm or a C surface having a width of 0.1 to 1.0 mm, the mechanical strength of the metal base 1 is increased and at the same time, when attaching both end regions B of the metal base 2 to an external member. Can be more effectively prevented from being transmitted to the central region A, whereby the alignment between the optical semiconductor element 6 and the optical fiber 9 can be made more accurate.
Therefore, the metal substrate 1 has a step formed at the boundary between the center region A and the both end regions B, an R surface having a radius of 0.1 to 1.0 mm,
Alternatively, it is preferable to provide a C surface having a width of 0.1 to 1.0 mm.
【００３８】[0038]
【発明の効果】本発明の光半導体素子収納用パッケージ
によれば、金属基体の両端領域の厚み（Ｔ）を１．０≧
Ｔ≧０．３（ｍｍ）とし、中央領域の厚み（Ｘ）をＸ≧
２Ｔとして段差を設けたことから、金属基体の中央領域
に光半導体素子を接着固定するとともに両端領域のネジ
止め部を外部部材に固定した場合、金属基体の反り矯正
に伴う応力は金属基体の両端領域を変形させることによ
って吸収され、中央領域には一切伝達されず、その結
果、金属基体の中央領域に接着固定されている光半導体
素子はその固定位置が常に一定となり、光半導体素子と
光ファイバーとの整合を正確として光半導体素子が励起
した光を光ファイバーを介し外部に良好に伝達すること
が可能となる。According to the package for housing an optical semiconductor element of the present invention, the thickness (T) of both end regions of the metal base is set to 1.0 ≧
T ≧ 0.3 (mm), and the thickness (X) of the central region is X ≧
Since the step is provided as 2T, when the optical semiconductor element is bonded and fixed to the central region of the metal base and the screwed portions at the both end regions are fixed to the external member, the stress accompanying the warp correction of the metal base is increased at both ends of the metal base. It is absorbed by deforming the area and is not transmitted to the central area at all. As a result, the optical semiconductor element bonded and fixed to the central area of the metal base always has a fixed position, and the optical semiconductor element and the optical fiber It is possible to transmit the light excited by the optical semiconductor element to the outside via the optical fiber satisfactorily by making the alignment of the optical semiconductor element accurate.
【図１】本発明の半導体素子収納用パッケージの一実施
例を示す分解斜視図である。FIG. 1 is an exploded perspective view showing one embodiment of a package for accommodating a semiconductor element of the present invention.
【図２】図１に示すパッケージの断面図である。FIG. 2 is a sectional view of the package shown in FIG. 1;
１・・・・金属基体 ２・・・・金属枠体 ３・・・・絶縁端子部材 ４・・・・金属環体 ５・・・・金属蓋体 ６・・・・光半導体素子 ７・・・・光ファイバー固定部材 DESCRIPTION OF SYMBOLS 1 ... Metal base 2 ... Metal frame 3 ... Insulated terminal member 4 ... Metal ring 5 ... Metal lid 6 ... Optical semiconductor element 7 ... ..Fixing members for optical fibers
Claims (1)
る載置部を、両端領域にネジ止め部を有する金属基体
と、前記光半導体素子載置部を囲繞するようにして金属
基体上に取着され、側部に光ファイバーを固定するため
の固定部を有する金属枠体と、前記金属枠体の上面に取
着され光半導体素子を気密に封止する金属蓋体とから成
る光半導体素子収納用パッケージであって、前記金属基
体を銅ータングステン合金で形成し、かつ中央領域の厚
みをＸ、両端領域の厚みをＴとしたとき、１．０≧Ｔ≧
０．３（ｍｍ）、Ｘ≧２Ｔとして中央領域の周囲に段差
を設けるとともに該段差に金属枠体の外周辺を合わせた
ことを特徴とする光半導体素子収納用パッケージ。1. A metal base having a mounting portion on which an optical semiconductor element is mounted in a central region on an upper surface, a metal base having screwing portions at both end regions, and a metal base having the optical semiconductor element mounting portion surrounding the mounting portion. A light comprising: a metal frame attached to the top and having a fixing portion for fixing an optical fiber to a side portion; and a metal lid attached to the upper surface of the metal frame to hermetically seal the optical semiconductor element. A package for housing a semiconductor element, wherein the metal base
The body is made of copper-tungsten alloy and the thickness of the central area
Where T is the thickness of both end regions and 1.0 ≧ T ≧
0.3 (mm), step around the central area as X ≧ 2T
And the outer periphery of the metal frame was fitted to the step.
An optical semiconductor element storage package characterized by the above-mentioned .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5103114A JP2784131B2 (en) | 1993-04-28 | 1993-04-28 | Package for storing optical semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5103114A JP2784131B2 (en) | 1993-04-28 | 1993-04-28 | Package for storing optical semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06314747A JPH06314747A (en) | 1994-11-08 |
| JP2784131B2 true JP2784131B2 (en) | 1998-08-06 |
Family
ID=14345578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5103114A Expired - Lifetime JP2784131B2 (en) | 1993-04-28 | 1993-04-28 | Package for storing optical semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2784131B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0899795A3 (en) | 1997-08-27 | 1999-05-12 | Sumitomo Electric Industries, Ltd. | Optical-semiconductor container or module |
| US6464409B1 (en) | 1999-10-08 | 2002-10-15 | Sumitomo Electric Industries, Ltd. | Package for optical communications modules |
| JP4208403B2 (en) * | 2000-11-14 | 2009-01-14 | 三洋電機株式会社 | Solar cell module and method for installing solar cell module |
| JP3433732B2 (en) | 2000-11-22 | 2003-08-04 | 住友電気工業株式会社 | Optical semiconductor hermetically sealed container, optical semiconductor module and optical fiber amplifier |
| JP4985422B2 (en) * | 2008-01-22 | 2012-07-25 | Ｎｅｃライティング株式会社 | Light emitting module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03229444A (en) * | 1990-02-05 | 1991-10-11 | Fujitsu Ltd | Semiconductor device with metal fitting for mounting |
-
1993
- 1993-04-28 JP JP5103114A patent/JP2784131B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06314747A (en) | 1994-11-08 |
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