JPH11509687A - 光電子変換器及び製造方法 - Google Patents
光電子変換器及び製造方法Info
- Publication number
- JPH11509687A JPH11509687A JP9506164A JP50616497A JPH11509687A JP H11509687 A JPH11509687 A JP H11509687A JP 9506164 A JP9506164 A JP 9506164A JP 50616497 A JP50616497 A JP 50616497A JP H11509687 A JPH11509687 A JP H11509687A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- support plate
- semiconductor device
- optoelectronic converter
- contact metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000005855 radiation Effects 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 15
- 239000011521 glass Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 235000013555 soy sauce Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.放射を送信及び/又は受信する半導体デバイス(9)の放射出射面もしくは 入射面(10)が支持板(1)に向くように半導体デバイス(9)が支持板(1 )上に固定され、支持板(1)は送信及び/又は受信される放射を透過させ、半 導体デバイス(9)によって送信もしくは受信される放射を集束させる放射集束 手段(3、27)が設けられている光電子変換器において、放射集束手段(3、 27)は支持板(1)と共に一体に形成されていることを特徴とする光電子変換 器。 2.放射を送信及び/又は受信する半導体デバイス(9)の放射出射面もしくは 入射面(10)が支持板(1)に向くように半導体デバイス(9)が支持板(1 )上に固定され、支持板(1)は送信及び/又は受信される放射を透過させ、半 導体デバイス(9)によって送信もしくは受信される放射を集束させる放射集束 手段(3、27)が設けられている光電子変換器において、半導体デバイス(9 )は少なくとも1つの第1の接触金属膜(12)を備えた放射出射面もしくは入 射面(10)を有し、支持板(1)は第2の接触金属膜(8)を有し、第1の接 触金属膜(12)と第2の接触金属膜(8)とは導電的に互いに結合されている ことを特徴とする光電子変換器。 3.放射集束手段(3、27)は支持板(1)と共に一体に形成されていること を特徴とする請求項2記載の光電子変換器。 4.放射集束手段(28)は独立して作られ、支持板(1)に取付けられている ことを特徴とする請求項2記載の光電子変換器。 5.放射集束手段は集光レンズ(3、28)であることを特徴とする請求項1乃 至4のいずれか1つに記載の光電子変換器。 6.放射集束手段は回折光学素子(27)であることを特徴とする請求項1乃至 4のいずれか1つに記載の光電子変換器。 7.放射集束手段(3、27、28)と半導体デバイス(9)とは支持板(1) の対向位置する面に配置されていることを特徴とする請求項1乃至6のいずれか 1つに記載の光電子変換器。 8.半導体デバイス(9)の放射出射面もしくは入射面(10)と支持板(1) との間には結合媒体(39)が配置されていることを特徴とする請求項1乃至7 のいずれか1つに記載の光電子変換器。 9.半導体デバイス(9)の放射出射面もしくは入射面(10)は支持板(1) 上に着座していることを特徴とする請求項1乃至7のいずれか1つに記載の光電 子変換器。 10.支持板(1)上にアイランド(6)が形成され、このアイランド(6)の 表面上に半導体デバイス(9)の放射出射面もしくは入射面(10)が着座して いることを特徴とする請求項9記載の光電子変換器。 11.a)多数の放射集束手段(3、27)を基板ウエハ(30)上に規定の基 本格子に従って形成する、 b)多数の半導体デバイス(9)を基板ウエハ(30)上に規定の基本格子に従 って固定する、 c)基板ウエハ(30)を規定の基本格子に従って個別化する ステップを有することを特徴とする請求項1、3、5乃至10のいずれか1つに 記載の光電子変換器の製造方法。 12.a)多数の第2の接触金属膜(8)を基板ウエハ(30)上に規定の基本 格子に従って設ける、 b)多数の半導体デバイス(9)の第1の接触金属膜(12)を第2の接触金属 膜(8)上に固定する、 c)基板ウエハ(30)を規定の基本格子に従って個別化する ステップを有することを特徴とする請求項2乃至10のいずれか1つの記載の光 電子変換器の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19527026A DE19527026C2 (de) | 1995-07-24 | 1995-07-24 | Optoelektronischer Wandler und Herstellverfahren |
DE19527026.6 | 1995-07-24 | ||
PCT/DE1996/001316 WO1997004491A1 (de) | 1995-07-24 | 1996-07-18 | Optoelektronischer wandler und herstellverfahren |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11509687A true JPH11509687A (ja) | 1999-08-24 |
JP3386817B2 JP3386817B2 (ja) | 2003-03-17 |
Family
ID=7767658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50616497A Expired - Lifetime JP3386817B2 (ja) | 1995-07-24 | 1996-07-18 | 光電子変換器及び製造方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0842543B1 (ja) |
JP (1) | JP3386817B2 (ja) |
KR (1) | KR19990035849A (ja) |
DE (2) | DE19527026C2 (ja) |
TW (1) | TW337555B (ja) |
WO (1) | WO1997004491A1 (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002100785A (ja) * | 2000-07-18 | 2002-04-05 | Infineon Technologies Ag | 表面実装可能なオプトエレクトロニクスモジュールおよび該オプトエレクトロニクスモジュールを有するオプトエレクトロニクス結合ユニット |
JP2002176200A (ja) * | 2000-09-12 | 2002-06-21 | Lumileds Lighting Us Llc | 改良された光抽出効率を有する発光ダイオード |
JP2004055671A (ja) * | 2002-07-17 | 2004-02-19 | Matsushita Electric Ind Co Ltd | 受光モジュールとその製造方法 |
JP2004086157A (ja) * | 2002-07-01 | 2004-03-18 | Seiko Epson Corp | 光トランシーバ及びその製造方法 |
JP2004086137A (ja) * | 2002-07-01 | 2004-03-18 | Seiko Epson Corp | 光トランシーバ及びその製造方法 |
JP2004158557A (ja) * | 2002-11-05 | 2004-06-03 | Shurai Kagi Kofun Yugenkoshi | 類似フリップチップ型の発光ダイオード装置パッケージ |
JP2005159296A (ja) * | 2003-11-06 | 2005-06-16 | Sharp Corp | オプトデバイスのパッケージ構造 |
US7070339B2 (en) | 2002-07-01 | 2006-07-04 | Seiko Epson Corporation | Method of manufacturing optical transceiver and adjustment device thereof |
JP2010541222A (ja) * | 2007-09-28 | 2010-12-24 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 半導体ベースの素子、半導体ベースの素子の収容部材、ならびに、半導体ベースの素子の製造方法 |
US8138511B2 (en) | 2001-03-09 | 2012-03-20 | Osram Ag | Radiation-emitting semiconductor component and method for producing the semiconductor component |
JP2012516047A (ja) * | 2009-01-22 | 2012-07-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法 |
US8628985B2 (en) | 2000-09-12 | 2014-01-14 | Philips Lumileds Lighting Company Llc | Light emitting devices with improved light extraction efficiency |
JP2014137404A (ja) * | 2013-01-15 | 2014-07-28 | Mitsubishi Electric Corp | 受信光学系 |
JP2018182172A (ja) * | 2017-04-18 | 2018-11-15 | 日本電信電話株式会社 | 受光素子およびその作製方法 |
JP2019016655A (ja) * | 2017-07-04 | 2019-01-31 | 日本電信電話株式会社 | 受光素子および製造方法 |
WO2019194043A1 (ja) * | 2018-04-05 | 2019-10-10 | 日本電信電話株式会社 | 受光素子および素子の製造方法 |
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US5990498A (en) * | 1997-09-16 | 1999-11-23 | Polaroid Corporation | Light-emitting diode having uniform irradiance distribution |
FI105606B (fi) | 1997-10-13 | 2000-09-15 | Nokia Mobile Phones Ltd | Optinen tiedonsiirtoyksikkö |
US6588949B1 (en) | 1998-12-30 | 2003-07-08 | Honeywell Inc. | Method and apparatus for hermetically sealing photonic devices |
US7004644B1 (en) * | 1999-06-29 | 2006-02-28 | Finisar Corporation | Hermetic chip-scale package for photonic devices |
DE19935496C1 (de) * | 1999-07-28 | 2001-01-18 | Siemens Ag | Optoelektronisches Bauelement und Verfahren zur Herstellung |
DE19952712A1 (de) * | 1999-11-02 | 2001-05-10 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
US6792178B1 (en) | 2000-01-12 | 2004-09-14 | Finisar Corporation | Fiber optic header with integrated power monitor |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002151781A (ja) | 2000-11-10 | 2002-05-24 | Mitsubishi Electric Corp | 光素子モジュール |
DE10101554A1 (de) | 2001-01-15 | 2002-08-01 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode |
DE10104715B4 (de) * | 2001-02-02 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optisches Bauelement |
WO2002084358A1 (de) | 2001-04-18 | 2002-10-24 | Infineon Technologies Ag | Sendemodul für eine optische signalübertragung |
DE10122134A1 (de) * | 2001-05-08 | 2002-12-05 | Sick Ag | Optischer Sensor |
FR2824955B1 (fr) * | 2001-05-18 | 2004-07-09 | St Microelectronics Sa | Boitier semi-conducteur optique blinde |
KR100439399B1 (ko) * | 2001-07-19 | 2004-07-09 | 삼성전기주식회사 | 광픽업장치를 위한 포토다이오드 패키지 및 그 제조방법 |
DE10150986A1 (de) * | 2001-10-10 | 2003-04-30 | Infineon Technologies Ag | Sende- und/oder Empfangseinrichtung |
DE10201102A1 (de) | 2002-01-09 | 2003-07-24 | Infineon Technologies Ag | Laservorrichtung |
DE10236376A1 (de) | 2002-08-02 | 2004-02-26 | Infineon Technologies Ag | Träger für optoelektronische Bauelemente sowie optische Sendeeinrichtung und optische Empfangseinrichtung |
EP1420462A1 (en) * | 2002-11-13 | 2004-05-19 | Heptagon Oy | Light emitting device |
US6969204B2 (en) | 2002-11-26 | 2005-11-29 | Hymite A/S | Optical package with an integrated lens and optical assemblies incorporating the package |
DE10308890A1 (de) * | 2003-02-28 | 2004-09-09 | Opto Tech Corporation | Gehäusestruktur für eine Lichtemissionsdiode und Verfahren zu dessen Herstellung |
DE10351349A1 (de) | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Verfahren zum Hestellen eines Lumineszenzdiodenchips |
DE10351397A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
JP4540382B2 (ja) * | 2004-04-05 | 2010-09-08 | Hoya株式会社 | 撮影用照明装置 |
DE102005006052A1 (de) | 2004-12-21 | 2006-07-06 | Osram Opto Semiconductors Gmbh | Linse, Laseranordnung und Verfahren zur Herstellung einer Laseranordnung |
DE102005008885B4 (de) * | 2005-02-26 | 2008-11-27 | Sick Ag | Lichtgitter |
WO2007023411A1 (en) | 2005-08-24 | 2007-03-01 | Philips Intellectual Property & Standards Gmbh | Light emitting diodes and lasers diodes with color converters |
US20070258241A1 (en) * | 2006-05-02 | 2007-11-08 | 3M Innovative Properties Company | Led package with non-bonded converging optical element |
US7525126B2 (en) | 2006-05-02 | 2009-04-28 | 3M Innovative Properties Company | LED package with converging optical element |
DE102007062042A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil, Verkapselung für ein optoelektronisches Bauteil und Herstellungsverfahren |
DE102010032512A1 (de) * | 2010-07-28 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements |
DE102016100563B4 (de) * | 2016-01-14 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung und optoelektronische Leuchtvorrichtung |
DE102017112235A1 (de) | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Laserdiode und Verfahren zum Herstellen einer Laserdiode |
FR3070793B1 (fr) * | 2017-09-05 | 2022-07-22 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif d'affichage emissif a led |
DE102017126109A1 (de) * | 2017-11-08 | 2019-05-09 | Osram Opto Semiconductors Gmbh | Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60153184A (ja) * | 1984-01-21 | 1985-08-12 | Sumitomo Electric Ind Ltd | 受光素子 |
DE3925189C1 (en) * | 1989-07-29 | 1990-12-13 | Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De | Optical transmission detector using optical fibre and PIN-diode - is mounted in V-shaped trench of crystalline silicon chip with vaporised counter-electrode and integrated receiving electronics |
DE58909311D1 (de) * | 1989-08-09 | 1995-07-27 | Siemens Ag | Optoelektronischer Wandler mit einer Linsenkoppeloptik. |
US5149958A (en) * | 1990-12-12 | 1992-09-22 | Eastman Kodak Company | Optoelectronic device component package |
JPH0555703A (ja) * | 1991-05-15 | 1993-03-05 | Fujitsu Ltd | 面発光レーザ装置 |
DE4313486C2 (de) * | 1992-11-25 | 1994-09-01 | Ant Nachrichtentech | Anordnung zur Ankopplung eines Lichtwellenleiters an mindestens ein lichtaussendendes oder -empfangendes Element |
DE4323681A1 (de) * | 1993-07-15 | 1995-01-19 | Bosch Gmbh Robert | Anordnung zur Ankopplung wenigstens einer Lichtleitfaser an wenigstens ein optisches Empfangs- oder Sendeelement und ein Verfahren zur Herstellung der Anordnung |
DE4416563C1 (de) * | 1994-05-11 | 1995-07-20 | Ant Nachrichtentech | Anordnung zur Ankopplung von optoelektronischen Komponenten und Lichtwellenleitern aneinander |
-
1995
- 1995-07-24 DE DE19527026A patent/DE19527026C2/de not_active Expired - Lifetime
-
1996
- 1996-07-02 TW TW085107987A patent/TW337555B/zh active
- 1996-07-18 JP JP50616497A patent/JP3386817B2/ja not_active Expired - Lifetime
- 1996-07-18 EP EP96923865A patent/EP0842543B1/de not_active Expired - Lifetime
- 1996-07-18 KR KR1019980700509A patent/KR19990035849A/ko not_active Application Discontinuation
- 1996-07-18 DE DE59608735T patent/DE59608735D1/de not_active Expired - Fee Related
- 1996-07-18 WO PCT/DE1996/001316 patent/WO1997004491A1/de not_active Application Discontinuation
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JP2002100785A (ja) * | 2000-07-18 | 2002-04-05 | Infineon Technologies Ag | 表面実装可能なオプトエレクトロニクスモジュールおよび該オプトエレクトロニクスモジュールを有するオプトエレクトロニクス結合ユニット |
JP2002176200A (ja) * | 2000-09-12 | 2002-06-21 | Lumileds Lighting Us Llc | 改良された光抽出効率を有する発光ダイオード |
US10312422B2 (en) | 2000-09-12 | 2019-06-04 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
US9583683B2 (en) | 2000-09-12 | 2017-02-28 | Lumileds Llc | Light emitting devices with optical elements and bonding layers |
US8628985B2 (en) | 2000-09-12 | 2014-01-14 | Philips Lumileds Lighting Company Llc | Light emitting devices with improved light extraction efficiency |
US8138511B2 (en) | 2001-03-09 | 2012-03-20 | Osram Ag | Radiation-emitting semiconductor component and method for producing the semiconductor component |
JP2004086157A (ja) * | 2002-07-01 | 2004-03-18 | Seiko Epson Corp | 光トランシーバ及びその製造方法 |
JP2004086137A (ja) * | 2002-07-01 | 2004-03-18 | Seiko Epson Corp | 光トランシーバ及びその製造方法 |
US7104703B2 (en) | 2002-07-01 | 2006-09-12 | Seiko Epson Corporation | Optical transceiver and method for producing the same |
US7070339B2 (en) | 2002-07-01 | 2006-07-04 | Seiko Epson Corporation | Method of manufacturing optical transceiver and adjustment device thereof |
JP2004055671A (ja) * | 2002-07-17 | 2004-02-19 | Matsushita Electric Ind Co Ltd | 受光モジュールとその製造方法 |
JP2004158557A (ja) * | 2002-11-05 | 2004-06-03 | Shurai Kagi Kofun Yugenkoshi | 類似フリップチップ型の発光ダイオード装置パッケージ |
JP2005159296A (ja) * | 2003-11-06 | 2005-06-16 | Sharp Corp | オプトデバイスのパッケージ構造 |
US8878195B2 (en) | 2007-09-28 | 2014-11-04 | Osram Opto Semiconductors Gmbh | Semiconductor based component, receptacle for a semiconductor based component, and method for producing a semiconductor based component |
JP2010541222A (ja) * | 2007-09-28 | 2010-12-24 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 半導体ベースの素子、半導体ベースの素子の収容部材、ならびに、半導体ベースの素子の製造方法 |
JP2012516047A (ja) * | 2009-01-22 | 2012-07-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法 |
JP2014137404A (ja) * | 2013-01-15 | 2014-07-28 | Mitsubishi Electric Corp | 受信光学系 |
JP2018182172A (ja) * | 2017-04-18 | 2018-11-15 | 日本電信電話株式会社 | 受光素子およびその作製方法 |
JP2019016655A (ja) * | 2017-07-04 | 2019-01-31 | 日本電信電話株式会社 | 受光素子および製造方法 |
WO2019194043A1 (ja) * | 2018-04-05 | 2019-10-10 | 日本電信電話株式会社 | 受光素子および素子の製造方法 |
JP2019186317A (ja) * | 2018-04-05 | 2019-10-24 | 日本電信電話株式会社 | 受光素子および素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0842543B1 (de) | 2002-02-13 |
DE19527026C2 (de) | 1997-12-18 |
TW337555B (en) | 1998-08-01 |
EP0842543A1 (de) | 1998-05-20 |
WO1997004491A1 (de) | 1997-02-06 |
JP3386817B2 (ja) | 2003-03-17 |
DE59608735D1 (de) | 2002-03-21 |
KR19990035849A (ko) | 1999-05-25 |
DE19527026A1 (de) | 1997-02-06 |
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